JPS6232453A - ポジ型ホトレジスト用現像液 - Google Patents

ポジ型ホトレジスト用現像液

Info

Publication number
JPS6232453A
JPS6232453A JP60171835A JP17183585A JPS6232453A JP S6232453 A JPS6232453 A JP S6232453A JP 60171835 A JP60171835 A JP 60171835A JP 17183585 A JP17183585 A JP 17183585A JP S6232453 A JPS6232453 A JP S6232453A
Authority
JP
Japan
Prior art keywords
developer
developing solution
positive photoresist
formulas
acetylene alcohol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60171835A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0451020B2 (Sortimente
Inventor
Hatsuyuki Tanaka
初幸 田中
Hidekatsu Obara
秀克 小原
Yoshiyuki Satou
佐藤　善亨
Shingo Asaumi
浅海　慎五
Toshimasa Nakayama
寿昌 中山
Akira Yokota
晃 横田
Hisashi Nakane
中根　久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP60171835A priority Critical patent/JPS6232453A/ja
Publication of JPS6232453A publication Critical patent/JPS6232453A/ja
Priority to US07/246,930 priority patent/US4833067A/en
Publication of JPH0451020B2 publication Critical patent/JPH0451020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G03C5/18—Diazo-type processes, e.g. thermal development, or agents therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
JP60171835A 1985-08-06 1985-08-06 ポジ型ホトレジスト用現像液 Granted JPS6232453A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60171835A JPS6232453A (ja) 1985-08-06 1985-08-06 ポジ型ホトレジスト用現像液
US07/246,930 US4833067A (en) 1985-08-06 1988-09-19 Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60171835A JPS6232453A (ja) 1985-08-06 1985-08-06 ポジ型ホトレジスト用現像液

Publications (2)

Publication Number Publication Date
JPS6232453A true JPS6232453A (ja) 1987-02-12
JPH0451020B2 JPH0451020B2 (Sortimente) 1992-08-17

Family

ID=15930635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60171835A Granted JPS6232453A (ja) 1985-08-06 1985-08-06 ポジ型ホトレジスト用現像液

Country Status (2)

Country Link
US (1) US4833067A (Sortimente)
JP (1) JPS6232453A (Sortimente)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0432849A (ja) * 1990-05-29 1992-02-04 Fuji Photo Film Co Ltd ネガ型感光性樹脂組成物用現像液
US7125648B2 (en) * 2003-12-19 2006-10-24 Fuji Photo Film Co., Ltd. Method for forming images
US7141358B2 (en) * 2003-07-31 2006-11-28 Fuji Photo Film Co., Ltd. Image-forming method and developer
JP2008146099A (ja) * 2002-08-12 2008-06-26 Air Products & Chemicals Inc 現像パターンのつぶれ回避方法
JP2009282526A (ja) * 2000-01-04 2009-12-03 Fujifilm Electronic Materials Usa Inc アセチレン列ジオールエチレンオキシド／プロピレンオキシド付加物および現像剤におけるその使用
JP2012103336A (ja) * 2010-11-08 2012-05-31 Nagase Chemtex Corp 有機無機複合膜の形成方法及び有機無機複合膜用現像液
JP2014219657A (ja) * 2013-04-10 2014-11-20 信越化学工業株式会社 現像液及びこれを用いたパターン形成方法
JP2015018224A (ja) * 2013-06-12 2015-01-29 信越化学工業株式会社 感光性レジスト材料用現像液及びこれを用いたパターン形成方法
JP2015026064A (ja) * 2013-06-19 2015-02-05 信越化学工業株式会社 感光性レジスト材料用現像液及びこれを用いたパターン形成方法
WO2018190529A1 (ko) * 2017-04-10 2018-10-18 영창케미칼 주식회사 Ｅｕｖ용 감광성 포토레지스트 미세패턴 형성용 현상액 조성물
CN108885412A (zh) * 2016-03-31 2018-11-23 富士胶片株式会社 半导体制造用处理液及图案形成方法

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3827567A1 (de) * 1988-08-13 1990-02-22 Basf Ag Waessrige entwicklerloesung fuer positiv arbeitende photoresists
JP2538081B2 (ja) * 1988-11-28 1996-09-25 松下電子工業株式会社 現像液及びパタ―ン形成方法
US5252436A (en) * 1989-12-15 1993-10-12 Basf Aktiengesellschaft Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds
US5580949A (en) * 1991-12-18 1996-12-03 Hoechst Celanese Corporation Metal ion reduction in novolak resins and photoresists
DE69215383T2 (de) * 1991-12-18 1997-04-30 Hoechst Celanese Corp Reduktion des metallionengehaltes in novolakharzen
SG48944A1 (en) * 1992-03-06 1998-05-18 Hoechst Celanese Corp Photoresists having a low level of metal ions
SG52770A1 (en) * 1992-07-10 1998-09-28 Hoechst Celanese Corp Metal ion reduction in top anti-reflective coatings for photoresists
US5830990A (en) * 1992-07-10 1998-11-03 Clariant Finance (Bvi) Limited Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists
DE69313132T2 (de) * 1992-11-25 1997-12-11 Hoechst Celanese Corp Metallionenreduzierung in antireflexunterschichten für photoresist
US5286606A (en) * 1992-12-29 1994-02-15 Hoechst Celanese Corporation Process for producing a developer having a low metal ion level
US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
DE4419166A1 (de) * 1994-06-01 1995-12-07 Hoechst Ag Entwickler für Photoresistschichten
US5521052A (en) * 1994-12-30 1996-05-28 Hoechst Celanese Corporation Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5614352A (en) * 1994-12-30 1997-03-25 Hoechst Celanese Corporation Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5656413A (en) * 1995-09-28 1997-08-12 Hoechst Celanese Corporation Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom
US5962183A (en) * 1995-11-27 1999-10-05 Clariant Finance (Bvi) Limited Metal ion reduction in photoresist compositions by chelating ion exchange resin
US5665517A (en) * 1996-01-11 1997-09-09 Hoechst Celanese Corporation Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
US6162592A (en) * 1998-10-06 2000-12-19 Wisconsin Alumni Research Foundation Methods for decreasing surface roughness in novolak-based resists
US7521405B2 (en) * 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US6455234B1 (en) 1999-05-04 2002-09-24 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and their use in photoresist developers
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US7348300B2 (en) * 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US6864395B2 (en) * 1999-05-04 2005-03-08 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US6281170B1 (en) 1999-10-18 2001-08-28 Air Products And Chemicals, Inc. Surface tension reduction with N,N,N'-trialkkyl ureas
JP3320402B2 (ja) * 2000-06-26 2002-09-03 クラリアント ジャパン 株式会社 現像欠陥防止プロセス及び材料
US6310019B1 (en) * 2000-07-05 2001-10-30 Wako Pure Chemical Industries, Ltd. Cleaning agent for a semi-conductor substrate
JP3914468B2 (ja) 2002-06-21 2007-05-16 Ａｚエレクトロニックマテリアルズ株式会社 現像欠陥防止プロセスおよびそれに用いる組成物
US6641986B1 (en) * 2002-08-12 2003-11-04 Air Products And Chemicals, Inc. Acetylenic diol surfactant solutions and methods of using same
US20060025549A1 (en) * 2002-11-15 2006-02-02 Kim Young H Process for using protective layers in the fabrication of electronic devices
US20040170925A1 (en) * 2002-12-06 2004-09-02 Roach David Herbert Positive imageable thick film compositions
CN1802603A (zh) 2003-07-17 2006-07-12 霍尼韦尔国际公司 用于高级微电子应用的平面化薄膜及其生产装置和方法
US7402373B2 (en) * 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
CN1973247A (zh) * 2004-05-27 2007-05-30 纳幕尔杜邦公司 光聚合物保护层的显影剂
US8900802B2 (en) 2013-02-23 2014-12-02 International Business Machines Corporation Positive tone organic solvent developed chemically amplified resist
JP6325464B2 (ja) * 2015-01-05 2018-05-16 信越化学工業株式会社 現像液及びこれを用いたパターン形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE793490A (fr) * 1972-05-23 1973-06-29 Hunt Chem Corp Philip A Article sensible a la lumiere comprenant un phenolate de diazoquinone, un liant polymerique, et une diazoquinone-siloxane
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
EP0062733B1 (en) * 1981-04-10 1986-01-02 Shipley Company Inc. Metal ion-free photoresist developer composition
US4374920A (en) * 1981-07-27 1983-02-22 American Hoechst Corporation Positive developer containing non-ionic surfactants
JPS5857128A (ja) * 1981-09-30 1983-04-05 Toshiba Corp ポジ型フオトレジストの現像液
US4423138A (en) * 1982-01-21 1983-12-27 Eastman Kodak Company Resist developer with ammonium or phosphonium compound and method of use to develop o-quinone diazide and novolac resist
JPS59219743A (ja) * 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液
JPS60223120A (ja) * 1984-04-20 1985-11-07 Hitachi Ltd 現像液
US4603058A (en) * 1984-10-05 1986-07-29 Macdermid, Incorporated Post-treatment of cured, radiation sensitive, polymerizable resins to eliminate surface tack
US4613561A (en) * 1984-10-17 1986-09-23 James Marvin Lewis Method of high contrast positive O-quinone diazide photoresist developing using pretreatment solution
JPH0612547A (ja) * 1992-06-26 1994-01-21 Ace Denken:Kk コイン分別収納装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0432849A (ja) * 1990-05-29 1992-02-04 Fuji Photo Film Co Ltd ネガ型感光性樹脂組成物用現像液
JP2009282526A (ja) * 2000-01-04 2009-12-03 Fujifilm Electronic Materials Usa Inc アセチレン列ジオールエチレンオキシド／プロピレンオキシド付加物および現像剤におけるその使用
JP2008146099A (ja) * 2002-08-12 2008-06-26 Air Products & Chemicals Inc 現像パターンのつぶれ回避方法
JP2008181137A (ja) * 2002-08-12 2008-08-07 Air Products & Chemicals Inc 半導体デバイス製造の際のパターンつぶれ欠陥数の低減方法及びリンス処理溶液
JP2009181145A (ja) * 2002-08-12 2009-08-13 Air Products & Chemicals Inc 半導体デバイス製造の際のパターンつぶれ欠陥数の低減方法
US7141358B2 (en) * 2003-07-31 2006-11-28 Fuji Photo Film Co., Ltd. Image-forming method and developer
US7125648B2 (en) * 2003-12-19 2006-10-24 Fuji Photo Film Co., Ltd. Method for forming images
JP2012103336A (ja) * 2010-11-08 2012-05-31 Nagase Chemtex Corp 有機無機複合膜の形成方法及び有機無機複合膜用現像液
JP2014219657A (ja) * 2013-04-10 2014-11-20 信越化学工業株式会社 現像液及びこれを用いたパターン形成方法
JP2015018224A (ja) * 2013-06-12 2015-01-29 信越化学工業株式会社 感光性レジスト材料用現像液及びこれを用いたパターン形成方法
JP2015026064A (ja) * 2013-06-19 2015-02-05 信越化学工業株式会社 感光性レジスト材料用現像液及びこれを用いたパターン形成方法
CN108885412A (zh) * 2016-03-31 2018-11-23 富士胶片株式会社 半导体制造用处理液及图案形成方法
US11256173B2 (en) 2016-03-31 2022-02-22 Fujifilm Corporation Treatment liquid for manufacturing semiconductor and pattern forming method
CN108885412B (zh) * 2016-03-31 2022-04-05 富士胶片株式会社 半导体制造用处理液及图案形成方法
WO2018190529A1 (ko) * 2017-04-10 2018-10-18 영창케미칼 주식회사 Ｅｕｖ용 감광성 포토레지스트 미세패턴 형성용 현상액 조성물
US11169442B2 (en) 2017-04-10 2021-11-09 Young Chang Chemical Co., Ltd EUV developer composition for forming photosensitive photoresist micropattern

Also Published As

Publication number Publication date
US4833067A (en) 1989-05-23
JPH0451020B2 (Sortimente) 1992-08-17

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term