JPS6231825B2 - - Google Patents

Info

Publication number
JPS6231825B2
JPS6231825B2 JP12868182A JP12868182A JPS6231825B2 JP S6231825 B2 JPS6231825 B2 JP S6231825B2 JP 12868182 A JP12868182 A JP 12868182A JP 12868182 A JP12868182 A JP 12868182A JP S6231825 B2 JPS6231825 B2 JP S6231825B2
Authority
JP
Japan
Prior art keywords
probe
semiconductor wafer
electrode pad
image
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12868182A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5917260A (ja
Inventor
Yasumasa Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12868182A priority Critical patent/JPS5917260A/ja
Publication of JPS5917260A publication Critical patent/JPS5917260A/ja
Publication of JPS6231825B2 publication Critical patent/JPS6231825B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP12868182A 1982-07-20 1982-07-20 半導体ウエハの試験方法 Granted JPS5917260A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12868182A JPS5917260A (ja) 1982-07-20 1982-07-20 半導体ウエハの試験方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12868182A JPS5917260A (ja) 1982-07-20 1982-07-20 半導体ウエハの試験方法

Publications (2)

Publication Number Publication Date
JPS5917260A JPS5917260A (ja) 1984-01-28
JPS6231825B2 true JPS6231825B2 (enrdf_load_stackoverflow) 1987-07-10

Family

ID=14990799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12868182A Granted JPS5917260A (ja) 1982-07-20 1982-07-20 半導体ウエハの試験方法

Country Status (1)

Country Link
JP (1) JPS5917260A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680717B2 (ja) * 1984-04-09 1994-10-12 株式会社日立製作所 検査装置
JPS622250U (enrdf_load_stackoverflow) * 1985-06-20 1987-01-08
JP2636857B2 (ja) * 1987-11-04 1997-07-30 東京エレクトロン株式会社 プローブ装置及び液晶パネル用プローブ装置
JPH0719825B2 (ja) * 1989-08-30 1995-03-06 山形日本電気株式会社 プロービング装置
JP4740405B2 (ja) 2000-11-09 2011-08-03 東京エレクトロン株式会社 位置合わせ方法及びプログラム記録媒体
JP4908138B2 (ja) * 2005-12-09 2012-04-04 ルネサスエレクトロニクス株式会社 プローブ検査装置
JP5154917B2 (ja) * 2006-12-27 2013-02-27 カスケード・マイクロテク・ドレスデン・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング プロービング装置で焦点を合わせて多平面画像を取得する装置と方法
CN113053765A (zh) * 2021-03-08 2021-06-29 常州雷射激光设备有限公司 一种用于半导体二极管芯片的检测设备

Also Published As

Publication number Publication date
JPS5917260A (ja) 1984-01-28

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