JPS6228587B2 - - Google Patents
Info
- Publication number
- JPS6228587B2 JPS6228587B2 JP53063415A JP6341578A JPS6228587B2 JP S6228587 B2 JPS6228587 B2 JP S6228587B2 JP 53063415 A JP53063415 A JP 53063415A JP 6341578 A JP6341578 A JP 6341578A JP S6228587 B2 JPS6228587 B2 JP S6228587B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- insulating film
- forming
- opening
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 41
- 239000012535 impurity Substances 0.000 claims description 31
- 239000011810 insulating material Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000007772 electrode material Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6341578A JPS54154966A (en) | 1978-05-29 | 1978-05-29 | Semiconductor electron device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6341578A JPS54154966A (en) | 1978-05-29 | 1978-05-29 | Semiconductor electron device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54154966A JPS54154966A (en) | 1979-12-06 |
| JPS6228587B2 true JPS6228587B2 (US20100056889A1-20100304-C00004.png) | 1987-06-22 |
Family
ID=13228627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6341578A Granted JPS54154966A (en) | 1978-05-29 | 1978-05-29 | Semiconductor electron device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54154966A (US20100056889A1-20100304-C00004.png) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57211251A (en) * | 1981-06-23 | 1982-12-25 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
| JPS59217327A (ja) * | 1983-05-26 | 1984-12-07 | Toshiba Corp | 半導体装置の製造方法 |
| JPH0618235B2 (ja) * | 1985-12-24 | 1994-03-09 | ロ−ム株式会社 | 半導体装置 |
| JP2641856B2 (ja) * | 1987-02-23 | 1997-08-20 | 日本電気株式会社 | 半導体装置の製造方法 |
| US4980304A (en) * | 1990-02-20 | 1990-12-25 | At&T Bell Laboratories | Process for fabricating a bipolar transistor with a self-aligned contact |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3303071A (en) * | 1964-10-27 | 1967-02-07 | Bell Telephone Labor Inc | Fabrication of a semiconductive device with closely spaced electrodes |
| JPS5091288A (US20100056889A1-20100304-C00004.png) * | 1973-12-12 | 1975-07-21 | ||
| JPS5227355A (en) * | 1975-08-27 | 1977-03-01 | Hitachi Ltd | Diffusion layer formation method |
| JPS534469A (en) * | 1977-05-26 | 1978-01-17 | Toshiba Corp | Semiconductor device |
-
1978
- 1978-05-29 JP JP6341578A patent/JPS54154966A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3303071A (en) * | 1964-10-27 | 1967-02-07 | Bell Telephone Labor Inc | Fabrication of a semiconductive device with closely spaced electrodes |
| JPS5091288A (US20100056889A1-20100304-C00004.png) * | 1973-12-12 | 1975-07-21 | ||
| JPS5227355A (en) * | 1975-08-27 | 1977-03-01 | Hitachi Ltd | Diffusion layer formation method |
| JPS534469A (en) * | 1977-05-26 | 1978-01-17 | Toshiba Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54154966A (en) | 1979-12-06 |
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