JPS6228569B2 - - Google Patents
Info
- Publication number
- JPS6228569B2 JPS6228569B2 JP1498277A JP1498277A JPS6228569B2 JP S6228569 B2 JPS6228569 B2 JP S6228569B2 JP 1498277 A JP1498277 A JP 1498277A JP 1498277 A JP1498277 A JP 1498277A JP S6228569 B2 JPS6228569 B2 JP S6228569B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- cvd
- reduced pressure
- reaction tube
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 239000012495 reaction gas Substances 0.000 claims description 17
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000376 reactant Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 12
- 230000005284 excitation Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1498277A JPS53101276A (en) | 1977-02-16 | 1977-02-16 | Decompression cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1498277A JPS53101276A (en) | 1977-02-16 | 1977-02-16 | Decompression cvd device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53101276A JPS53101276A (en) | 1978-09-04 |
| JPS6228569B2 true JPS6228569B2 (zh) | 1987-06-22 |
Family
ID=11876161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1498277A Granted JPS53101276A (en) | 1977-02-16 | 1977-02-16 | Decompression cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53101276A (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5714287U (zh) * | 1980-06-24 | 1982-01-25 | ||
| JPS5948535B2 (ja) * | 1980-11-18 | 1984-11-27 | 富士通株式会社 | プラズマｃｖｄ装置 |
| JPS58101421A (ja) * | 1981-12-11 | 1983-06-16 | Canon Inc | 堆積膜の製造装置 |
| JPS6115976A (ja) * | 1984-07-03 | 1986-01-24 | Matsushita Electric Ind Co Ltd | プラズマ反応装置およびその使用方法 |
| JPS61283114A (ja) * | 1985-06-10 | 1986-12-13 | Toshiba Mach Co Ltd | プラズマｃｖｄ装置 |
| JPS62260065A (ja) * | 1986-04-04 | 1987-11-12 | Canon Inc | 酸化すず薄膜の形成法 |
-
1977
- 1977-02-16 JP JP1498277A patent/JPS53101276A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53101276A (en) | 1978-09-04 |
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