JPS6226593B2 - - Google Patents
Info
- Publication number
- JPS6226593B2 JPS6226593B2 JP54068776A JP6877679A JPS6226593B2 JP S6226593 B2 JPS6226593 B2 JP S6226593B2 JP 54068776 A JP54068776 A JP 54068776A JP 6877679 A JP6877679 A JP 6877679A JP S6226593 B2 JPS6226593 B2 JP S6226593B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- layer
- palladium
- schottky diode
- platinum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 84
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 44
- 229910052763 palladium Inorganic materials 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 23
- 229910052750 molybdenum Inorganic materials 0.000 claims description 23
- 239000011733 molybdenum Substances 0.000 claims description 23
- 229910021332 silicide Inorganic materials 0.000 claims description 22
- 229910052697 platinum Inorganic materials 0.000 claims description 20
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 239000010936 titanium Substances 0.000 claims description 18
- 229910052719 titanium Inorganic materials 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 239000000523 sample Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims description 5
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 claims description 4
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 4
- 229910021340 platinum monosilicide Inorganic materials 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 41
- 230000008569 process Effects 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910021140 PdSi Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000001995 intermetallic alloy Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/911,764 US4206540A (en) | 1978-06-02 | 1978-06-02 | Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54159183A JPS54159183A (en) | 1979-12-15 |
| JPS6226593B2 true JPS6226593B2 (nl) | 1987-06-09 |
Family
ID=25430828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6877679A Granted JPS54159183A (en) | 1978-06-02 | 1979-06-01 | Schottky diode and method of fabricating same |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4206540A (nl) |
| JP (1) | JPS54159183A (nl) |
| DE (1) | DE2921971C2 (nl) |
| ES (1) | ES481012A1 (nl) |
| FR (1) | FR2427688A1 (nl) |
| GB (2) | GB2022318B (nl) |
| IT (1) | IT1165084B (nl) |
| SE (1) | SE440293B (nl) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4546374A (en) * | 1981-03-23 | 1985-10-08 | Motorola Inc. | Semiconductor device including plateless package |
| US4398344A (en) * | 1982-03-08 | 1983-08-16 | International Rectifier Corporation | Method of manufacture of a schottky using platinum encapsulated between layers of palladium sintered into silicon surface |
| US4638551A (en) * | 1982-09-24 | 1987-01-27 | General Instrument Corporation | Schottky barrier device and method of manufacture |
| JPS59210642A (ja) * | 1983-05-16 | 1984-11-29 | Hitachi Ltd | 半導体装置の製造方法 |
| US4899199A (en) * | 1983-09-30 | 1990-02-06 | International Rectifier Corporation | Schottky diode with titanium or like layer contacting the dielectric layer |
| US4742377A (en) * | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
| US4687537A (en) * | 1986-04-15 | 1987-08-18 | Rca Corporation | Epitaxial metal silicide layers |
| JPS6373660A (ja) * | 1986-09-17 | 1988-04-04 | Fujitsu Ltd | 半導体装置 |
| US5130172A (en) * | 1988-10-21 | 1992-07-14 | The Regents Of The University Of California | Low temperature organometallic deposition of metals |
| AT399419B (de) * | 1989-09-21 | 1995-05-26 | Int Rectifier Corp | Verfahren zur einführung von platinatomen in eine siliziumscheibe zur verringerung der minoritätsträger-lebensdauer |
| US4925812A (en) * | 1989-09-21 | 1990-05-15 | International Rectifier Corporation | Platinum diffusion process |
| GB2265636B (en) * | 1989-09-21 | 1994-05-18 | Int Rectifier Corp | Platinum diffusion process |
| IT1247293B (it) * | 1990-05-09 | 1994-12-12 | Int Rectifier Corp | Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione |
| US5047367A (en) * | 1990-06-08 | 1991-09-10 | Intel Corporation | Process for formation of a self aligned titanium nitride/cobalt silicide bilayer |
| US5536684A (en) * | 1994-06-30 | 1996-07-16 | Intel Corporation | Process for formation of epitaxial cobalt silicide and shallow junction of silicon |
| US5888891A (en) * | 1996-08-23 | 1999-03-30 | International Rectifier Corporation | Process for manufacturing a schottky diode with enhanced barrier height and high thermal stability |
| DE19939484A1 (de) * | 1998-09-01 | 2000-03-09 | Int Rectifier Corp | Schottky-Diode |
| US6184564B1 (en) * | 1998-12-28 | 2001-02-06 | International Rectifier Corp. | Schottky diode with adjusted barrier height and process for its manufacture |
| US6690037B1 (en) | 2000-08-31 | 2004-02-10 | Agere Systems Inc. | Field plated Schottky diode |
| JP2002353182A (ja) * | 2001-05-25 | 2002-12-06 | Mitsubishi Electric Corp | 半導体装置の洗浄方法および洗浄装置、ならびに半導体装置の製造方法 |
| US7061067B2 (en) * | 2003-07-04 | 2006-06-13 | Matsushita Electric Industrial Co., Ltd. | Schottky barrier diode |
| US7812441B2 (en) * | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
| US7394158B2 (en) * | 2004-10-21 | 2008-07-01 | Siliconix Technology C.V. | Solderable top metal for SiC device |
| US7834376B2 (en) | 2005-03-04 | 2010-11-16 | Siliconix Technology C. V. | Power semiconductor switch |
| US9419092B2 (en) * | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
| US7923362B2 (en) * | 2005-06-08 | 2011-04-12 | Telefunken Semiconductors Gmbh & Co. Kg | Method for manufacturing a metal-semiconductor contact in semiconductor components |
| DE102005026301B3 (de) * | 2005-06-08 | 2007-01-11 | Atmel Germany Gmbh | Verfahren zum Herstellen eines Metall- Halbleiter-Kontakts bei Halbleiterbauelementen |
| WO2007005844A2 (en) * | 2005-07-05 | 2007-01-11 | International Rectifier Corporation | Schottky diode with improved surge capability |
| US8368165B2 (en) | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
| US7749877B2 (en) * | 2006-03-07 | 2010-07-06 | Siliconix Technology C. V. | Process for forming Schottky rectifier with PtNi silicide Schottky barrier |
| EP2047514A4 (en) | 2006-07-31 | 2010-12-01 | Vishay Siliconix | MOLYBDENUM BARRIER METAL FOR SIC SCHOTTKY DIODE AND METHOD FOR MANUFACTURING THE SAME |
| DE102009018971A1 (de) * | 2009-04-25 | 2010-11-04 | Secos Halbleitertechnologie Gmbh | Konstruktion einer Schottkydiode mit verbessertem Hochstromverhalten und Verfahren zu deren Herstellung |
| US8784572B2 (en) * | 2011-10-19 | 2014-07-22 | Intermolecular, Inc. | Method for cleaning platinum residues on a semiconductor substrate |
| EP3268991A1 (de) | 2015-06-02 | 2018-01-17 | Diotec Semiconductor AG | Verbesserte halbleiteranordnung mit schottky-diode |
| CN109585570A (zh) * | 2018-12-19 | 2019-04-05 | 吉林麦吉柯半导体有限公司 | 肖特基二极管、nipt95合金及肖特基二极管的制造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1107700A (en) * | 1966-03-29 | 1968-03-27 | Matsushita Electronics Corp | A method for manufacturing semiconductor devices |
| NL6911534A (nl) * | 1968-08-01 | 1970-02-03 | ||
| US3669730A (en) * | 1970-04-24 | 1972-06-13 | Bell Telephone Labor Inc | Modifying barrier layer devices |
| IT1002232B (it) * | 1972-12-26 | 1976-05-20 | Gen Electric | Contatti a barriera schottky e metodi per fare i medesimi |
| US3938243A (en) * | 1973-02-20 | 1976-02-17 | Signetics Corporation | Schottky barrier diode semiconductor structure and method |
| US3906540A (en) * | 1973-04-02 | 1975-09-16 | Nat Semiconductor Corp | Metal-silicide Schottky diode employing an aluminum connector |
| US3968272A (en) * | 1974-01-25 | 1976-07-06 | Microwave Associates, Inc. | Zero-bias Schottky barrier detector diodes |
| US4110488A (en) * | 1976-04-09 | 1978-08-29 | Rca Corporation | Method for making schottky barrier diodes |
| US4063964A (en) * | 1976-12-27 | 1977-12-20 | International Business Machines Corporation | Method for forming a self-aligned schottky barrier device guardring |
-
1978
- 1978-06-02 US US05/911,764 patent/US4206540A/en not_active Expired - Lifetime
-
1979
- 1979-05-16 SE SE7904305A patent/SE440293B/sv unknown
- 1979-05-23 FR FR7913119A patent/FR2427688A1/fr active Granted
- 1979-05-29 ES ES481012A patent/ES481012A1/es not_active Expired
- 1979-05-30 DE DE2921971A patent/DE2921971C2/de not_active Expired
- 1979-06-01 IT IT23215/79A patent/IT1165084B/it active
- 1979-06-01 GB GB7919107A patent/GB2022318B/en not_active Expired
- 1979-06-01 GB GB7914677A patent/GB2044534B/en not_active Expired
- 1979-06-01 JP JP6877679A patent/JPS54159183A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2921971A1 (de) | 1979-12-06 |
| GB2044534A (en) | 1980-10-15 |
| SE440293B (sv) | 1985-07-22 |
| US4206540A (en) | 1980-06-10 |
| JPS54159183A (en) | 1979-12-15 |
| GB2022318A (en) | 1979-12-12 |
| DE2921971C2 (de) | 1983-09-29 |
| FR2427688B1 (nl) | 1984-10-26 |
| IT7923215A0 (it) | 1979-06-01 |
| GB2044534B (en) | 1982-09-08 |
| FR2427688A1 (fr) | 1979-12-28 |
| IT1165084B (it) | 1987-04-22 |
| SE7904305L (sv) | 1979-12-03 |
| ES481012A1 (es) | 1980-07-16 |
| GB2022318B (en) | 1982-09-15 |
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| JPS6226593B2 (nl) | ||
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