JPS6224951B2 - - Google Patents

Info

Publication number
JPS6224951B2
JPS6224951B2 JP56197277A JP19727781A JPS6224951B2 JP S6224951 B2 JPS6224951 B2 JP S6224951B2 JP 56197277 A JP56197277 A JP 56197277A JP 19727781 A JP19727781 A JP 19727781A JP S6224951 B2 JPS6224951 B2 JP S6224951B2
Authority
JP
Japan
Prior art keywords
oxide film
transistor
region
conductivity type
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56197277A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5897859A (ja
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56197277A priority Critical patent/JPS5897859A/ja
Publication of JPS5897859A publication Critical patent/JPS5897859A/ja
Publication of JPS6224951B2 publication Critical patent/JPS6224951B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP56197277A 1981-12-08 1981-12-08 半導体装置の製造方法 Granted JPS5897859A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56197277A JPS5897859A (ja) 1981-12-08 1981-12-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56197277A JPS5897859A (ja) 1981-12-08 1981-12-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5897859A JPS5897859A (ja) 1983-06-10
JPS6224951B2 true JPS6224951B2 (enrdf_load_stackoverflow) 1987-05-30

Family

ID=16371781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56197277A Granted JPS5897859A (ja) 1981-12-08 1981-12-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5897859A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685852A (en) * 1979-12-17 1981-07-13 Toshiba Corp Manufacture of bipolar type integrated circuit

Also Published As

Publication number Publication date
JPS5897859A (ja) 1983-06-10

Similar Documents

Publication Publication Date Title
JPH1070281A (ja) 半導体装置およびその製造方法
JPH059939B2 (enrdf_load_stackoverflow)
US5019523A (en) Process for making polysilicon contacts to IC mesas
JPH02211662A (ja) 共通基板上にバイポーラ及びｃｍｏｓトランジスタを製造する方法
KR900003835B1 (ko) 반도체 장치(半導體裝置)
JPH025432A (ja) 半導体装置の製造方法
JPS6224951B2 (enrdf_load_stackoverflow)
JP3137044B2 (ja) 半導体装置及びその製造方法
JPH0590492A (ja) 半導体集積回路とその製造方法
JP2531680B2 (ja) 半導体装置およびその製造方法
JPH0475346A (ja) 半導体装置の製造方法
JPH056965A (ja) 半導体集積回路及びその製造方法
JPS6214103B2 (enrdf_load_stackoverflow)
JPS63114261A (ja) トランジスタ用の自己整合型ベース分路
JP2567867B2 (ja) 半導体集積回路装置の製造方法
JP3300474B2 (ja) 半導体装置およびその製造方法
JPH0157506B2 (enrdf_load_stackoverflow)
JPH01140667A (ja) 半導体装置
JPH056344B2 (enrdf_load_stackoverflow)
JPS5984464A (ja) 半導体集積回路装置の製造方法
JPH05211131A (ja) 半導体装置
JPH07142563A (ja) 半導体装置の製造方法
JPH0581065B2 (enrdf_load_stackoverflow)
JPH0126548B2 (enrdf_load_stackoverflow)
JPH0317374B2 (enrdf_load_stackoverflow)