JPS62238371A - プラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置

Info

Publication number
JPS62238371A
JPS62238371A JP61080081A JP8008186A JPS62238371A JP S62238371 A JPS62238371 A JP S62238371A JP 61080081 A JP61080081 A JP 61080081A JP 8008186 A JP8008186 A JP 8008186A JP S62238371 A JPS62238371 A JP S62238371A
Authority
JP
Japan
Prior art keywords
magnetic field
electrode
plasma
recess groove
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61080081A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0249386B2 (enExample
Inventor
Hirohiko Izumi
泉　宏比古
Akira Ishibashi
暁 石橋
Yasuaki Hayashi
林　康明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP61080081A priority Critical patent/JPS62238371A/ja
Publication of JPS62238371A publication Critical patent/JPS62238371A/ja
Publication of JPH0249386B2 publication Critical patent/JPH0249386B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP61080081A 1986-04-09 1986-04-09 プラズマｃｖｄ装置 Granted JPS62238371A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61080081A JPS62238371A (ja) 1986-04-09 1986-04-09 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61080081A JPS62238371A (ja) 1986-04-09 1986-04-09 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS62238371A true JPS62238371A (ja) 1987-10-19
JPH0249386B2 JPH0249386B2 (enExample) 1990-10-30

Family

ID=13708269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61080081A Granted JPS62238371A (ja) 1986-04-09 1986-04-09 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS62238371A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01279761A (ja) * 1988-05-06 1989-11-10 Fujitsu Ltd 薄膜形成装置
JPH024976A (ja) * 1988-06-23 1990-01-09 Fujitsu Ltd 薄膜形成方法
JPH02142120A (ja) * 1988-11-22 1990-05-31 Tokyo Electron Ltd プラズマ処理装置
JP2001181848A (ja) * 1999-12-20 2001-07-03 Anelva Corp プラズマ処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01279761A (ja) * 1988-05-06 1989-11-10 Fujitsu Ltd 薄膜形成装置
JPH024976A (ja) * 1988-06-23 1990-01-09 Fujitsu Ltd 薄膜形成方法
JPH02142120A (ja) * 1988-11-22 1990-05-31 Tokyo Electron Ltd プラズマ処理装置
JP2001181848A (ja) * 1999-12-20 2001-07-03 Anelva Corp プラズマ処理装置

Also Published As

Publication number Publication date
JPH0249386B2 (enExample) 1990-10-30

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