JPS62235726A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS62235726A JPS62235726A JP7976686A JP7976686A JPS62235726A JP S62235726 A JPS62235726 A JP S62235726A JP 7976686 A JP7976686 A JP 7976686A JP 7976686 A JP7976686 A JP 7976686A JP S62235726 A JPS62235726 A JP S62235726A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ions
- silicon
- crystallinity
- sos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 150000002500 ions Chemical class 0.000 claims abstract description 28
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 22
- 239000010980 sapphire Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 abstract description 44
- 238000005468 ion implantation Methods 0.000 abstract description 8
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000007790 solid phase Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005280 amorphization Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7976686A JPS62235726A (ja) | 1986-04-07 | 1986-04-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7976686A JPS62235726A (ja) | 1986-04-07 | 1986-04-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62235726A true JPS62235726A (ja) | 1987-10-15 |
| JPH0533527B2 JPH0533527B2 (enrdf_load_stackoverflow) | 1993-05-19 |
Family
ID=13699333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7976686A Granted JPS62235726A (ja) | 1986-04-07 | 1986-04-07 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62235726A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0752719A1 (en) * | 1995-07-07 | 1997-01-08 | Plessey Semiconductors Limited | Method of manufacturing a silicon on sapphire integrated circuit arrangement |
| US6090648A (en) * | 1993-07-12 | 2000-07-18 | Peregrine Semiconductor Corp. | Method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
| JP2012506132A (ja) * | 2008-10-02 | 2012-03-08 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 埋め込みプロセスの温度調整方法 |
-
1986
- 1986-04-07 JP JP7976686A patent/JPS62235726A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6090648A (en) * | 1993-07-12 | 2000-07-18 | Peregrine Semiconductor Corp. | Method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
| EP0752719A1 (en) * | 1995-07-07 | 1997-01-08 | Plessey Semiconductors Limited | Method of manufacturing a silicon on sapphire integrated circuit arrangement |
| JP2012506132A (ja) * | 2008-10-02 | 2012-03-08 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 埋め込みプロセスの温度調整方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0533527B2 (enrdf_load_stackoverflow) | 1993-05-19 |
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