JPS62230076A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS62230076A JPS62230076A JP7351586A JP7351586A JPS62230076A JP S62230076 A JPS62230076 A JP S62230076A JP 7351586 A JP7351586 A JP 7351586A JP 7351586 A JP7351586 A JP 7351586A JP S62230076 A JPS62230076 A JP S62230076A
- Authority
- JP
- Japan
- Prior art keywords
- face
- film
- wavelength
- semiconductor laser
- reflectance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052593 corundum Inorganic materials 0.000 abstract description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 21
- 230000003287 optical effect Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、元ディスクメモリの記録・消去や医療機器等
に用いられる半導体レーザ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor laser device used for recording and erasing original disk memories, medical equipment, and the like.
従来の技術
光出力が３０〜４０ｍＷ以上の高出力半導体レーザは、
光デイスクメモリの記録・消去等に必要な素子であり、
近年益々その需要が増大している。Conventional technology: High-power semiconductor lasers with an optical output of 30 to 40 mW or more are
An element necessary for recording and erasing optical disk memory, etc.
The demand for it has been increasing in recent years.
半導体レーザの最大光出力ヲ央める要因は、レーザ共振
器端面における光密度である。ＧａＡ／Ａｓ結晶から成
る半導体レーザでは、端面での光密度が１０’Ｗ／ｃｔ
ｉｆ越えると、熱のために結晶が溶融し端面が破壊され
る。端面でのｆｆ、密度を下げる方法として、端面での
発光面積を大きくするのと、端面反射率を下げる方法が
とられる。The factor that determines the maximum optical output of a semiconductor laser is the optical density at the end face of the laser resonator. In a semiconductor laser made of GaA/As crystal, the optical density at the end facet is 10'W/ct.
If the temperature exceeds if, the crystal will melt due to the heat and the end face will be destroyed. As a method of lowering the ff and density at the end face, methods are used to increase the light emitting area at the end face and to lower the reflectance of the end face.
半導体レーザは共振器を骨間によって作製するのが一般
的であり、端面反射率は約３０％である。A semiconductor laser generally has a resonator formed between bones, and has an end face reflectance of about 30%.
通常片側の端面のレーザ光を利用し、他の端面からのレ
ーザ光はモニタ出力を得るために受光素子で受けること
が多いので、モニタ元を得る方の端面（後端面）の反射
率は高くシ、この端面からの出射レーザ光は少なくする
。レーザ光を外部に取り出す方の端面（前端面）の反射
率を下げると１、レーザ発振のしきい値は増大するが、
微分効率は増大する。その結果、高出力では動作電流を
減少させることができる。第４図に動作電流を最小にす
る前端面反射率の計算結果を示す。光出力が高 。Normally, the laser light from one end face is used, and the laser light from the other end face is often received by a light receiving element to obtain a monitor output, so the reflectance of the end face (rear end face) that obtains the monitor source is high. B. Reduce the amount of laser light emitted from this end face. If the reflectance of the end face (front end face) that extracts the laser beam to the outside is lowered, the threshold for laser oscillation will increase, but
Differential efficiency increases. As a result, operating current can be reduced at high power. FIG. 4 shows the calculation results of the reflectance of the front facet that minimizes the operating current. High light output.
くなるほど、前面反射率を低くする必要があることがわ
かる。It can be seen that the closer the front reflectance becomes, the more it is necessary to lower the front reflectance.
端面反射率を下げる方法として、端面に薄膜を被着させ
るのが一般に用いられている。Ｇ＆ムＳ結晶にＡｌ２Ｏ
３膜を被着させた時、 ｋ１２０．の膜厚がｏ、２５波
長（屈折率を１．６６とし、波長が８０ｏ〇八とすると
１２１２Ａ）のときに反射率は最小（約２％）となる。A commonly used method for lowering the end face reflectance is to coat the end face with a thin film. Al2O in G&MUS crystal
When three films were deposited, k120. The reflectance is minimum (approximately 2%) when the film thickness is o and 25 wavelengths (1212A if the refractive index is 1.66 and the wavelength is 80o8).
発明が解決しようとする問題点
しかしながら、前記のような構成では、反射率を十分に
下げることができず、そのため高い光出力を得ることが
できなかった。Problems to be Solved by the Invention However, with the above configuration, the reflectance could not be lowered sufficiently, and therefore a high light output could not be obtained.
本発明は、前記欠点に鑑み、反射率のきわめて小さい端
面コート膜が被着された半導体レーザ装置を提供するも
のである。In view of the above drawbacks, the present invention provides a semiconductor laser device coated with an end face coating film having extremely low reflectance.
問題点を解決するための手段
本発明では、端面にまずムｇ２０５膜’ｉｏ、１５波長
の膜厚に被着し、その上に０．０３６からｏ、ｏ ｓ
。Means for Solving the Problems In the present invention, the end face is first coated with a Mug205 film with a thickness of 15 wavelengths, and then coated with a film of 0.036 o, o s.
.
波長の膜厚の８１膜を被着するか、あるいはＡｌ２Ｏ３
膜の膜厚ｉ０．３５波長にして、Ｓｉ膜の方は０．４５
から０．４７波長としている。Deposit a film with a thickness of 81 cm or Al2O3
Film thickness i0.35 wavelength, Si film is 0.45
0.47 wavelength.
作用
このように端面に２層膜を付着させることにより、端面
反射率を２％以下にすることができる。Function: By attaching a two-layer film to the end face in this manner, the end face reflectance can be reduced to 2% or less.
実施例
本発明の実施例を以下に述べる。第１図は本発明による
端面コート膜を有する半導体レーザ装置の外観図である
。後端面からのレーザ光は、通常ホトダイオードで受光
してモニタ出力を得るのみに用いられるので、この端面
には０．２６波長の膜厚のＡｌ２Ｏ５’とＳｉ２’ｉ交
互に４層板着し、端面反射率を約９２％にまで高めてい
る。前端面には０．１６波長の膜厚のＡｌ２Ｏ３３と、
０．０４波長の膜厚のＳｉ ４を被着している。Examples Examples of the present invention will be described below. FIG. 1 is an external view of a semiconductor laser device having an end face coating film according to the present invention. Since the laser beam from the rear end face is normally used only to receive the light with a photodiode and obtain a monitor output, four layers of Al2O5' and Si2'i with a film thickness of 0.26 wavelength are deposited alternately on this end face. The end face reflectance has been increased to approximately 92%. On the front end surface, there is Al2O33 with a film thickness of 0.16 wavelength,
A film of Si 4 with a thickness of 0.04 wavelength is deposited.
第２図に、０．１６と０．３５波長のＡｌ２Ｏ３膜上に
、Ｓｉを被着させた時の反射率の変化を示す。FIG. 2 shows changes in reflectance when Si is deposited on Al2O3 films of 0.16 and 0.35 wavelengths.
Ａ ｌ ２０ ｓ カｏ、１ｓ波長のときは、Ｓｉが約
０．０４５波長で反射率が極小となり、その値は約０．
０１％である。またＡｌ２Ｏ．がｏ、３６波長のときは
、Ｓｉが約０．４５５波長で極小の反射率となる。実際
に用いる場合には、Ｓ１膜に若干の吸収があるため、Ｓ
１膜を薄くする条件の前者の方がより良い。When the wavelength of Al 20 s is 1 s, the reflectance of Si reaches its minimum at about 0.045 wavelength, and its value is about 0.045.
It is 01%. Also, Al2O. When is o and 36 wavelengths, Si has a minimum reflectance at about 0.455 wavelength. In actual use, since the S1 film has some absorption,
The former condition of making one film thinner is better.
第３図に本発明の端面コート膜を有する半導体レーザ装
置の電流−光出力特性を示す。後端面はどちらも、ム／
２０．／Ｓｉの４層コートで反射率を９２％としている
。Ｂの素子は、前面に０．２６波長の膜厚のムｅ２０３
が被着され、反射率は２％程度となっている。本発明の
コー）１−施した素子ムでは、４ｏｒｎＷ以上の光出力
で動作電流がそれ以上の光出力ではＢの素子よりも小さ
くなっている。FIG. 3 shows the current-light output characteristics of a semiconductor laser device having the end face coating film of the present invention. Both rear end faces are
20. /Si four-layer coating gives a reflectance of 92%. The element B has a film thickness of 0.26 wavelength on the front surface.
is deposited, and the reflectance is about 2%. In the device according to C) 1 of the present invention, the operating current is smaller than that of element B at optical outputs of 4 ornW or more and optical outputs higher than that.
動作電流がより減少することと、端面での結晶内部の光
密度の減少によって、半導体レーザ装置の高出力での信
頼性が向上する。The reliability of the semiconductor laser device at high output is improved by further reducing the operating current and by reducing the optical density inside the crystal at the end facets.
発明の効果
以上のように本発明による端面コート膜を用いれば、高
出力半導体レーザ装置が得られ、また信頼性も向上し、
大なる効果を有する。Effects of the Invention As described above, by using the end face coating film according to the present invention, a high output semiconductor laser device can be obtained, and reliability is also improved.
It has a great effect.
第１図は本発明の半導体レーザ装置の外観図、第２図は
Ｓ１膜の膜厚に対する反射率を示す図、第３図は電流−
光出力特性を示す図、そして第４図は動作電流を最小に
する端面反射率の計算結果を示す図である。
１．３・・・・・・Ａｌ２Ｏ３膜、２．４・・・・・・
Ｓ１膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名イー
−ｓｉ、ｏ、 ｏ２ｓ＊ｒＪＪ＊’−−ＳＬ ０．
２１ ”
ｊ −−−Ａｂ０３０． ｆＪ ”
ＩｊＳ２図
５−罠岬ンノｌＬ７！−（１＋Ｌイ１ヒ’ｆｉ−＋づ【
１に：ン第３図
＜ Ｌ （ｍａ＋
第４図
九出７１ （ｍｗ＋FIG. 1 is an external view of the semiconductor laser device of the present invention, FIG. 2 is a diagram showing the reflectance versus thickness of the S1 film, and FIG. 3 is a diagram showing the current -
FIG. 4 is a diagram showing the optical output characteristics, and FIG. 4 is a diagram showing the calculation result of the end face reflectance that minimizes the operating current. 1.3...Al2O3 film, 2.4...
S1 membrane. Name of agent: Patent attorney Toshio Nakao and one other person E-si, o, o2s*rJJ*'--SL 0.
21 ” j --- Ab030. fJ ” IjS2 Figure 5 - Trap Cape NnolL7! -(1+L i1hi'fi-+zu [
1: Figure 3 < L (ma+ Figure 4 9 71 (mw+
Claims (1)
厚さのＡｌ＿２Ｏ＿３膜と、その上に０．０３５波長か
ら０．０５０波長に相当する厚さのＳｉ膜もしくは、０
．３５波長に相当する厚さのＡｌ＿２Ｏ＿３膜と、その
上に０．４５波長から０．４７波長に相当する厚さのＳ
ｉ膜を有していることを特徴とする半導体レーザ装置。On at least one side of the cavity end face, there is an Al_2O_3 film with a thickness corresponding to 0.15 wavelength, and on top of that, a Si film with a thickness corresponding to 0.035 to 0.050 wavelength, or 0.
．． An Al_2O_3 film with a thickness corresponding to 35 wavelengths, and an S film with a thickness corresponding to 0.45 to 0.47 wavelengths on top of it.
A semiconductor laser device characterized by having an i-film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7351586A JPH0732287B2 (en) | 1986-03-31 | 1986-03-31 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7351586A JPH0732287B2 (en) | 1986-03-31 | 1986-03-31 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62230076A true JPS62230076A (en) | 1987-10-08 |
| JPH0732287B2 JPH0732287B2 (en) | 1995-04-10 |
Family
ID=13520458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7351586A Expired - Lifetime JPH0732287B2 (en) | 1986-03-31 | 1986-03-31 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0732287B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5031186A (en) * | 1989-03-15 | 1991-07-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device |
| US7596162B2 (en) | 2006-09-01 | 2009-09-29 | Sumitomo Electric Industries Ltd. | Method for forming a coating film on a facet of a semiconductor laser diode |
-
1986
- 1986-03-31 JP JP7351586A patent/JPH0732287B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5031186A (en) * | 1989-03-15 | 1991-07-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device |
| US7596162B2 (en) | 2006-09-01 | 2009-09-29 | Sumitomo Electric Industries Ltd. | Method for forming a coating film on a facet of a semiconductor laser diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0732287B2 (en) | 1995-04-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |