JPH06342958A - Surface light emitting semiconductor laser - Google Patents
Surface light emitting semiconductor laserInfo
- Publication number
- JPH06342958A JPH06342958A JP13219993A JP13219993A JPH06342958A JP H06342958 A JPH06342958 A JP H06342958A JP 13219993 A JP13219993 A JP 13219993A JP 13219993 A JP13219993 A JP 13219993A JP H06342958 A JPH06342958 A JP H06342958A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- dielectric
- light emitting
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板に対し垂直方向に
光を出射させる面発光半導体レーザの特性改善に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvement of characteristics of a surface emitting semiconductor laser which emits light in a direction perpendicular to a substrate.
【０００２】[0002]
【従来の技術】面発光半導体レーザは、低しきい値動
作、高速変調及び大規模二次元集積化が可能であり、光
通信、光情報処理システムを構成するデバイスとして期
待されている。2. Description of the Related Art Surface-emitting semiconductor lasers are capable of low threshold operation, high-speed modulation and large-scale two-dimensional integration, and are expected as devices constituting optical communication and optical information processing systems.
【０００３】従来の面発光半導体レーザの概略構造図を
図２に示す。ヒートシンクにボンディングする側（図の
上部）は、低屈折率の誘電体２と高屈折率の誘電体３の
多層膜からなる反射鏡と、この反射鏡の最上層にある低
屈折率の誘電体の上を反射率増強のための金属膜４で覆
うことで構成されている。なお、１は発光層である。FIG. 2 shows a schematic structural diagram of a conventional surface emitting semiconductor laser. The side to be bonded to the heat sink (upper part of the figure) is a reflecting mirror composed of a multilayer film of a low refractive index dielectric 2 and a high refractive index dielectric 3, and a low refractive index dielectric on the uppermost layer of this reflecting mirror. Is covered with a metal film 4 for enhancing the reflectance. In addition, 1 is a light emitting layer.
【０００４】[0004]
【発明が解決しようとする課題】しかし、従来の構造で
は、通常の１００℃以上のボンディングを行うと反射率
を増強するための金属膜４がボンディング用の金属と合
金化し、反射率の低減を引き起こしていた。However, in the conventional structure, when the ordinary bonding at 100 ° C. or higher is performed, the metal film 4 for enhancing the reflectivity is alloyed with the metal for bonding to reduce the reflectivity. Was causing it.
【０００５】このため、Ｇａ等の低融点の金属を用い、
合金化の起こらない温度でボンディングしなければなら
なかった。また、この素子の動作温度範囲は、ボンディ
ングに使う金属の融点以下に限られていた。Therefore, a low melting point metal such as Ga is used,
Bonding had to be done at a temperature where alloying did not occur. Further, the operating temperature range of this element was limited to the melting point of the metal used for bonding or less.
【０００６】本発明の目的は、上記欠点を解決するため
に提案されたもので、１００℃以上でボンディングを行
っても、反射率増強のための金属膜の効果を十分に利用
して、反射鏡の反射率を向上させることができ、また効
果的に放熱を行うことで、低しきい値でかつ室温以上の
高温でも安定に動作する面発光半導体レーザを提供する
ことにある。The object of the present invention was proposed in order to solve the above-mentioned drawbacks. Even if bonding is carried out at 100 ° C. or higher, the effect of the metal film for enhancing the reflectance is fully utilized and reflection is achieved. It is an object of the present invention to provide a surface emitting semiconductor laser which can improve the reflectance of the mirror and can effectively dissipate heat so that the mirror has a low threshold value and operates stably even at a high temperature of room temperature or higher.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、請求項１では、反射率増強のための金属膜を、半導
体多層膜あるいは誘電体多層膜からなる反射鏡の上部に
接合させ、その金属膜側を熱放散のためのヒートシンク
にボンディングする面発光半導体レーザにおいて、ヒー
トシンクにボンディングする側が、発光層に近い方から
反射鏡、第１の金属膜、誘電体膜、第２の金属膜の順で
構成されるようにした。In order to achieve the above object, according to a first aspect of the present invention, a metal film for enhancing reflectivity is bonded to an upper portion of a reflecting mirror made of a semiconductor multi-layer film or a dielectric multi-layer film. In a surface emitting semiconductor laser in which a metal film side is bonded to a heat sink for heat dissipation, a side of the heat sink that is bonded to the heat sink includes a reflecting mirror, a first metal film, a dielectric film, and a second metal film from the side closer to the light emitting layer. It was arranged in order.
【０００８】[0008]
【作用】本発明では、１００℃以上でボンディングを行
っても、反射率増強のための第１の金属膜とボンディン
グ用金属との合金化が生じないため、第１の金属膜によ
る反射率増強効果を十分利用でき、反射鏡の膜厚を著し
く減少させることが可能となる。また、ボンディングを
行うことで効果的に放熱を行うことができるため、この
素子はボンディングに用いる金属の融点以下であれば安
定に動作させることが可能となる。In the present invention, even if the bonding is performed at 100 ° C. or higher, the first metal film for enhancing the reflectance does not alloy with the bonding metal, so that the first metal film enhances the reflectance. The effect can be fully utilized and the film thickness of the reflecting mirror can be remarkably reduced. Moreover, since heat can be effectively dissipated by performing the bonding, this element can be stably operated at a temperature equal to or lower than the melting point of the metal used for the bonding.
【０００９】[0009]
【実施例】以下本発明の実施例を図面に基づいて詳細に
説明する。Embodiments of the present invention will now be described in detail with reference to the drawings.
【００１０】図１は本発明による面発光半導体レーザの
第１の実施例を示す基本構造の断面図である。同図にお
いて、６は単結晶ＩｎＰの半導体基板、７はこの半導体
基板６上に形成された単結晶ＩｎＰと単結晶ＩｎＧａＡ
ｓＰからなる半導体多層膜反射鏡であり、その厚さは屈
折率ｎ、発振波長をλとしてλ／（４・ｎ）である。８
は発光波長のピークが１．５５μｍである単結晶ＩｎＧ
ａＡｓＰからなる発光層であり、９は発光層８にキャリ
アを閉じこめるための単結晶ＩｎＰからなるクラッド
層、１０は単結晶ＩｎＧａＡｓＰからなるコンタクト層
である。１５は屈折率の異なる２種の誘電体からなる多
層膜反射鏡であり、コンタクト層１０の上には低屈折率
の誘電体が積層されている。１３は金、銀、銅あるいは
アルミニウム等の単体の金属であり、１４は誘電体膜で
ある。１１はコンタクト層１０にオーミック電極を形成
するための金属であり、１２は１４及び１１を覆う金属
膜である。１６は電流を狭窄するためｐ型及びｎ型Ｉｎ
Ｐからなる電流ブロック層である。FIG. 1 is a sectional view of a basic structure showing a first embodiment of a surface emitting semiconductor laser according to the present invention. In the figure, 6 is a semiconductor substrate of single crystal InP, 7 is a single crystal InP and a single crystal InGaA formed on the semiconductor substrate 6.
It is a semiconductor multilayer film reflecting mirror made of sP, and its thickness is λ / (4 · n) where the refractive index is n and the oscillation wavelength is λ. 8
Is a single crystal InG having an emission wavelength peak of 1.55 μm
Reference numeral 9 is a light emitting layer made of aAsP, 9 is a cladding layer made of single crystal InP for confining carriers in the light emitting layer 8, and 10 is a contact layer made of single crystal InGaAsP. Reference numeral 15 is a multilayer-film reflective mirror made of two kinds of dielectric materials having different refractive indexes, and a dielectric material having a low refractive index is laminated on the contact layer 10. Reference numeral 13 is a simple metal such as gold, silver, copper or aluminum, and 14 is a dielectric film. Reference numeral 11 is a metal for forming an ohmic electrode on the contact layer 10, and 12 is a metal film covering 14 and 11. 16 is p-type and n-type In for constricting the current
It is a current blocking layer made of P.
【００１１】次に上記各部について詳細に説明する。Next, each of the above parts will be described in detail.
【００１２】ｎ型ＩｎＰ基板６上に禁制帯幅が波長にし
て１．４μｍに対応するｎ型ＩｎＧａＡｓＰ（0.112 μ
ｍ）とｎ型ＩｎＰ（0.122 μｍ）を３４対積層する。次
いで８の発光層であるＩｎＧａＡｓＰは光学波長で２波
長分（約0.875 μｍ）、９のｐ型ＩｎＰクラッド層は光
学波長の９／４倍分（約1.1 μｍ）、１０の禁制帯幅が
波長にして1.4 μｍに対応するｐ型ＩｎＧａＡｓＰコン
タクト層は光学波長の３／４倍（0.336 μｍ）とする。
発光領域の上部に誘電体膜ＳｉＯ2 とＴｉＯ2を5.5 対
積層する。コンタクト層に接触する方が低屈折率のＳｉ
Ｏ2 であり、最終層もＳｉＯ2 になる。それぞれの厚さ
は光学波長の１／４倍に当たり、ＳｉＯ2 は0.26μｍ、
ＴｉＯ2 は0.16μｍである。コンタクト層上でり、か
つ、この誘電体多層膜を避けた部分にＡｕ、Ｚｎ、Ｎｉ
等の金属を使ってオーミック電極１１を形成する。ま
た、誘電体多層膜１５の最終層であるＳｉＯ2 上に金を
0.1 μｍ蒸着し、さらにその上に0.26μｍのＳｉＯ2 膜
を積層する。この上から0.05μｍのチタンと0.2 μｍの
金を蒸着し、全面が金蔵で覆われるようにする。最後に
メッキ等の方法で表面に厚い金を積層する。電流はｐ型
コンタクト層１０に形成されたオーミック電極１１及び
１２とｎ型基板に形成されたオーミック電極１７を通し
て流される。On the n-type InP substrate 6, an n-type InGaAsP (0.112 μm) having a forbidden band width of 1.4 μm in wavelength.
m) and n-type InP (0.122 μm) are laminated in 34 pairs. Next, InGaAsP which is the light emitting layer of 8 has an optical wavelength of two wavelengths (about 0.875 μm), and the p-type InP clad layer of 9 has an optical wavelength of 9/4 times (about 1.1 μm) and a forbidden band width of 10 has a wavelength. Then, the p-type InGaAsP contact layer corresponding to 1.4 μm is 3/4 times (0.336 μm) the optical wavelength.
5.5 pairs of dielectric films SiO 2 and TiO 2 are laminated on the light emitting region. Si having a lower refractive index is in contact with the contact layer
O 2 and the final layer is also SiO 2 . Each thickness corresponds to 1/4 of the optical wavelength, SiO 2 is 0.26 μm,
TiO 2 is 0.16 μm. Au, Zn, and Ni are formed on the contact layer and in the portion avoiding the dielectric multilayer film.
The ohmic electrode 11 is formed by using a metal such as. In addition, gold is deposited on SiO 2 which is the final layer of the dielectric multilayer film 15.
0.1 μm is vapor-deposited, and a 0.26 μm SiO 2 film is further stacked thereon. From this, 0.05 μm titanium and 0.2 μm gold are vapor-deposited so that the entire surface is covered with a metal warehouse. Finally, thick gold is laminated on the surface by a method such as plating. A current is passed through the ohmic electrodes 11 and 12 formed on the p-type contact layer 10 and the ohmic electrode 17 formed on the n-type substrate.
【００１３】図３は図１に示した面発光半導体レーザを
ボンディングした図であり、約２００℃の温度で圧力を
加えることで誘電体膜１４上の金はヒートシンク１８上
に蒸着された鉛錫と合金化し接着されるが、反射率増強
のための金属１３は合金が起こらず高反射膜として作用
する。FIG. 3 is a diagram in which the surface emitting semiconductor laser shown in FIG. 1 is bonded, and gold on the dielectric film 14 is vapor-deposited on the heat sink 18 by applying pressure at a temperature of about 200.degree. However, the metal 13 for enhancing the reflectance acts as a highly reflective film without alloying.
【００１４】図４は本発明の第２の実施例を示すもので
あり、上記の実施例においてＩｎＰ基板１９側の反射鏡
２２も屈折率の異なる２種の誘電体からなる多層膜反射
鏡にしたものである。この実施例の場合ｎ型ＩｎＰクラ
ッド層２１の厚さは光学波長の９／４倍分（約1.1 μ
ｍ）であり、禁制帯幅が波長にして1.4 μｍに対応する
ｎ型ＩｎＧａＡｓＰ層２０の厚さは光学波長の１／４倍
（0.112 μｍ）である。ＩｎＰ基板１９を選択性のある
エッチング液でエッチングし、このＩｎＧａＡｓＰ層を
表面に出し、その上にＳｉＯ2 とＴｉＯ2 からなる誘電
体多層膜を１２対積層する。ＩｎＧａＡｓＰに接触する
方が低屈折率のＳｉＯ2 であり最終層はＴｉＯ2 にな
る。FIG. 4 shows a second embodiment of the present invention. In the above embodiment, the reflecting mirror 22 on the InP substrate 19 side is also a multilayer film reflecting mirror made of two kinds of dielectric materials having different refractive indexes. It was done. In this embodiment, the thickness of the n-type InP clad layer 21 is 9/4 times the optical wavelength (about 1.1 μm).
m), and the thickness of the n-type InGaAsP layer 20 corresponding to the forbidden band width of 1.4 μm in wavelength is ¼ times the optical wavelength (0.112 μm). The InP substrate 19 is etched with a selective etching solution to expose the InGaAsP layer on the surface, and 12 pairs of dielectric multilayer films made of SiO 2 and TiO 2 are laminated thereon. The lower index SiO 2 is in contact with InGaAsP and the final layer is TiO 2 .
【００１５】この他、半導体の多層膜と誘電体の多層膜
の併用であっても良い。Besides, a semiconductor multilayer film and a dielectric multilayer film may be used in combination.
【００１６】なお、いずれの実施例とも発光層の上下に
配置される各層の膜厚（半導体多層膜を形成するそれぞ
れの半導体膜の厚さ、発光層の厚さ、クラッド層の厚
さ、コンタクト層の厚さ及び誘電体多層膜を形成するそ
れぞれの誘電体膜の厚さ）は、光学波長の１／４倍の奇
数倍とし、さらに連続した３層を取ると常に両端に２層
の屈折率が真ん中の層よりも大きいか、あるいは両端の
２層の屈折率が真ん中の層よりも小さくなるような構成
とし、連続した３層の屈折率が大中小の順で並ばないよ
うにする。連続した３層の屈折率が大中小と変化する場
合は真ん中の層の厚さを光学波長の１／４倍の偶数倍と
する。この場合の例を図５に示す。In any of the embodiments, the film thickness of each layer arranged above and below the light emitting layer (thickness of each semiconductor film forming the semiconductor multilayer film, thickness of the light emitting layer, thickness of the clad layer, contact) The thickness of each layer and the thickness of each dielectric film forming the dielectric multilayer film should be an odd multiple of 1/4 times the optical wavelength, and if three consecutive layers are taken, two layers are always refracted at both ends. The refractive index of the two layers on both ends is smaller than that of the middle layer, or the refractive index of the two layers at both ends is smaller than that of the middle layer, so that the refractive indices of the three consecutive layers are not aligned in the order of large, medium and small. When the refractive index of three consecutive layers changes from large to small, the thickness of the middle layer is set to an even multiple of ¼ times the optical wavelength. An example of this case is shown in FIG.
【００１７】ｐ型クラッド層２４の上にＳｉＯ2 とＴｉ
Ｏ2 からなる誘電体多層膜を形成する場合、ｐ型クラッ
ド層上に積層する層を低屈折率の誘電体ＳｉＯ2 膜２５
に選ぶと発光層２３、クラッド層２４、誘電体膜２５の
順で屈折率が小さくなるため、ｐ型ＩｎＰクラッド層２
４の厚さを光学波長の１／４倍の偶数倍である0.976μ
ｍ（光学波長の１／４倍の８倍）とする。その上に光学
波長の１／４倍の厚さに当たる0.26μｍの低屈折率誘電
体ＳｉＯ2 と、光学波長の１／４倍の厚さに当たる0.26
μｍの高屈折誘電体ＴｉＯ2 を５．５対積層してある。
その他は図１と同様である。SiO 2 and Ti are deposited on the p-type cladding layer 24.
When forming a dielectric multilayer film made of O 2, a layer to be laminated on the p-type clad layer is a dielectric SiO 2 film 25 having a low refractive index.
Is selected, the refractive index becomes smaller in the order of the light emitting layer 23, the cladding layer 24, and the dielectric film 25. Therefore, the p-type InP cladding layer 2
The thickness of 4 is 0.976μ, which is an even multiple of 1/4 of the optical wavelength.
m (1/4 times the optical wavelength, 8 times). On top of that, a low-refractive-index dielectric SiO 2 of 0.26 μm, which is 1/4 times the optical wavelength, and 0.26, which is 1/4 times the optical wavelength.
5.5 pairs of high-refractive-index TiO 2 having a thickness of μm are laminated.
Others are the same as in FIG.
【００１８】図６は本発明の第４の実施例であり、ボン
ディング側の金の蒸着膜２８、さらにその上にＳｉＯ2
とＴｉＯ2 の５．５対からなる誘電体多層膜２９を積層
した構造になっている。この場合、金属膜の上に低屈折
率のＳｉＯ2 膜を積層し最終層もＳｉＯ2 膜になってい
る。FIG. 6 shows a fourth embodiment of the present invention, in which a gold-deposited film 28 on the bonding side is formed, and SiO 2 is further formed thereon.
And a dielectric multilayer film 29 composed of 5.5 pairs of TiO 2 and TiO 2 . In this case, a low refractive index SiO 2 film is laminated on the metal film, and the final layer is also a SiO 2 film.
【００１９】上記第２から第４の実施例においても、第
２の実施例と同様にヒートシンクにボンディングできる
こと及び同様の効果が得られることは言うまでもない。It goes without saying that the second to fourth embodiments can bond to the heat sink and can obtain the same effect as in the second embodiment.
【００２０】上記実施例では、発光層が長波長系ＩｎＧ
ａＡｓＰのバルクであったが、他の材料系あるいは量子
井戸構造、量子井戸歪構造などでも適用できる。またボ
ンディング側反射鏡は誘電体多層膜だけでなく、半導体
多層膜でも同様の効果が得られるのは言うまでもない。In the above embodiment, the light emitting layer has a long-wavelength InG.
Although it is a bulk of aAsP, it can be applied to other material systems, quantum well structures, quantum well strained structures, or the like. It goes without saying that the bonding side reflecting mirror can obtain the same effect not only with the dielectric multilayer film but also with the semiconductor multilayer film.
【００２１】[0021]
【発明の効果】以上説明したように本発明の面発光半導
体レーザは、ヒートシンクにボンディングする側を、発
光層に近い方から反射鏡、反射率増強のための第１の金
属膜、誘電体膜、第２の金属膜の順で構成されているの
で、１００℃以上でボンディングを行っても、反射率増
強のための第１の金属膜は誘電体膜に保護され合金化が
生じないため、第１の金属膜による反射率増強効果を十
分利用でき、反射鏡の膜厚を著しく減少させることが可
能となる効果がある。また、ボンディングを行うことで
効果的に放熱を行うことができるため、この素子はボン
ディングに用いる金属の融点以下であれば安定に動作さ
せることが可能となる効果もある。As described above, in the surface-emitting semiconductor laser of the present invention, the side to be bonded to the heat sink is the reflector from the side closer to the light emitting layer, the first metal film for increasing the reflectance, and the dielectric film. Since the second metal film is formed in this order, even if bonding is performed at 100 ° C. or higher, the first metal film for enhancing the reflectance is protected by the dielectric film and is not alloyed. There is an effect that the reflectivity enhancing effect of the first metal film can be fully utilized and the film thickness of the reflecting mirror can be remarkably reduced. Further, since the heat can be effectively radiated by performing the bonding, there is also an effect that the element can be stably operated at a temperature equal to or lower than the melting point of the metal used for the bonding.
【図１】本発明による面発光半導体レーザの第１の実施
例の断面構造図FIG. 1 is a sectional structural view of a first embodiment of a surface emitting semiconductor laser according to the present invention.
【図２】従来の面発光レーザの構造を示す断面図FIG. 2 is a sectional view showing the structure of a conventional surface emitting laser.
【図３】図１に示した面発光半導体レーザをボンディン
グした図FIG. 3 is a diagram in which the surface emitting semiconductor laser shown in FIG. 1 is bonded.
【図４】本発明の他の実施例の断面構造図FIG. 4 is a sectional structural view of another embodiment of the present invention.
【図５】本発明の他の実施例の断面構造図FIG. 5 is a sectional structural view of another embodiment of the present invention.
【図６】本発明の他の実施例の断面構造図FIG. 6 is a sectional structural view of another embodiment of the present invention.
５…電極、６…ＩｎＰ基板、７…半導体多層膜反射鏡、
８…発光層、ｐクラッド層、１０…ｐコンタクト層、１
１…ｐ電極、１２，１３…金属膜、１４…誘電体膜、１
５…誘電体多層膜、１６…電流ブロック層、１７，１８
…ｎ電極、１９…ＩｎＰ基板、２０…ｎ−クラッド層、
２２…誘電体多層膜反射鏡、２３…発光層、２４…ｐク
ラッド層、２５，２７…ＳｉＯ2 、２６…ｐコンタクト
層、誘電体多層膜、３０…金属膜。5 ... Electrode, 6 ... InP substrate, 7 ... Semiconductor multilayer film reflecting mirror,
8 ... Light emitting layer, p-clad layer, 10 ... p-contact layer, 1
DESCRIPTION OF SYMBOLS 1 ... P electrode, 12, 13 ... Metal film, 14 ... Dielectric film, 1
5 ... Dielectric multilayer film, 16 ... Current blocking layer, 17, 18
... n electrode, 19 ... InP substrate, 20 ... n-clad layer,
22 ... Dielectric multilayer mirror, 23 ... Light emitting layer, 24 ... P clad layer, 25, 27 ... SiO 2 , 26 ... P contact layer, Dielectric multilayer, 30 ... Metal film.
Claims (1)
層膜あるいは誘電体多層膜からなる反射鏡の上部に接合
させ、金属膜側を熱放散のためのヒートシンクにボンデ
ィングする面発光半導体レーザにおいて、 ヒートシンクにボンディングする側が、発光層に近い方
から反射鏡、第１の金属膜、誘電体膜、第２の金属膜の
順で構成されていることを特徴とする面発光半導体レー
ザ。1. A surface emitting semiconductor laser in which a metal film for enhancing reflectivity is bonded to an upper portion of a reflecting mirror made of a semiconductor multilayer film or a dielectric multilayer film, and the metal film side is bonded to a heat sink for heat dissipation. In the surface emitting semiconductor laser, the side to be bonded to the heat sink is composed of a reflecting mirror, a first metal film, a dielectric film, and a second metal film in this order from the side closer to the light emitting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13219993A JPH06342958A (en) | 1993-06-02 | 1993-06-02 | Surface light emitting semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13219993A JPH06342958A (en) | 1993-06-02 | 1993-06-02 | Surface light emitting semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06342958A true JPH06342958A (en) | 1994-12-13 |
Family
ID=15075715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13219993A Pending JPH06342958A (en) | 1993-06-02 | 1993-06-02 | Surface light emitting semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06342958A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005079264A (en) * | 2003-08-29 | 2005-03-24 | Shin Etsu Handotai Co Ltd | Light emitting element |
| KR100641925B1 (en) * | 1999-02-05 | 2006-11-02 | 필립스 루미리즈 라이팅 캄파니 엘엘씨 | WAFER BONDED AlxGayInzN STRUCTURES |
| JP2012156046A (en) * | 2011-01-27 | 2012-08-16 | Asahi Glass Co Ltd | Positive electrode active material for lithium ion secondary battery and method of producing the same |
| JPWO2019171869A1 (en) * | 2018-03-07 | 2021-02-18 | ソニーセミコンダクタソリューションズ株式会社 | Surface emitting laser |
-
1993
- 1993-06-02 JP JP13219993A patent/JPH06342958A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100641925B1 (en) * | 1999-02-05 | 2006-11-02 | 필립스 루미리즈 라이팅 캄파니 엘엘씨 | WAFER BONDED AlxGayInzN STRUCTURES |
| JP2005079264A (en) * | 2003-08-29 | 2005-03-24 | Shin Etsu Handotai Co Ltd | Light emitting element |
| JP4697650B2 (en) * | 2003-08-29 | 2011-06-08 | 信越半導体株式会社 | Light emitting element |
| JP2012156046A (en) * | 2011-01-27 | 2012-08-16 | Asahi Glass Co Ltd | Positive electrode active material for lithium ion secondary battery and method of producing the same |
| JPWO2019171869A1 (en) * | 2018-03-07 | 2021-02-18 | ソニーセミコンダクタソリューションズ株式会社 | Surface emitting laser |
| EP3764490A4 (en) * | 2018-03-07 | 2021-04-21 | Sony Semiconductor Solutions Corporation | Surface-emitting laser |
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