JPH07302953A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
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- JPH07302953A JPH07302953A JP11768194A JP11768194A JPH07302953A JP H07302953 A JPH07302953 A JP H07302953A JP 11768194 A JP11768194 A JP 11768194A JP 11768194 A JP11768194 A JP 11768194A JP H07302953 A JPH07302953 A JP H07302953A
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- semiconductor laser
- multilayer reflective
- reflective film
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- laser device
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、レーザ光を反射する多
層反射膜を有する半導体レーザ素子に関し、特に熱放散
のよい多層反射膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device having a multilayer reflective film that reflects laser light, and more particularly to a multilayer reflective film having good heat dissipation.
【０００２】[0002]
【従来の技術】半導体レーザ素子においては、光の共振
器を構成するために、一対の平行な反射膜を形成する。
例えば、従来の垂直共振器型面発光半導体レーザ素子
は、図１に示すような断面構造を形成している。図中、
１はｎ型ＩｎＰ基板、２はｎ型ＩｎＧａＡｓＰエッチン
グ停止層、３はｎ型ＩｎＰクラッド層、４はＩｎＧａＡ
ｓＰ活性層、５はｐ型ＩｎＰクラッド層、６はｐ型Ｉｎ
Ｐブロッキング層、７はｎ型ＩｎＰブロッキング層、８
はｐ型ＩｎＰクラッド層、９はｐ型ＩｎＧａＡｓコンタ
クト層、１０はｐ側電極、１１はｎ側電極、１２、１３
は高反射膜である。上記半導体レーザ素子において、高
反射膜１２はα−Ｓｉ／ＳｉＯ2 ５ペアからなる誘電体
多層反射膜からなり、高反射膜１３は同じ４ペアの誘電
体多層反射膜からなる。ペアをなすα−Ｓｉ（アモルフ
ァス−Ｓｉ）とＳｉＯ2 の各膜厚は、それぞれ発振波長
の１／４の光学的厚さ、λ／４ｎ（λ：発振波長、ｎ：
屈折率）に設定される。反射率はペア数により決まり、
１ペアで８０％、２ペアで９６％、３ペアで９８％、４
ペアで９９％、５ペアで９９％以上の反射率となる。2. Description of the Related Art In a semiconductor laser device, a pair of parallel reflecting films are formed in order to form an optical resonator.
For example, a conventional vertical cavity surface emitting semiconductor laser device has a sectional structure as shown in FIG. In the figure,
1 is an n-type InP substrate, 2 is an n-type InGaAsP etching stop layer, 3 is an n-type InP cladding layer, 4 is InGaA
sP active layer, 5 p-type InP clad layer, 6 p-type In
P blocking layer, 7 is n-type InP blocking layer, 8
Is a p-type InP clad layer, 9 is a p-type InGaAs contact layer, 10 is a p-side electrode, 11 is an n-side electrode, 12, 13
Is a highly reflective film. In the above semiconductor laser device, the high reflection film 12 is made of a dielectric multilayer reflection film made of α-Si / SiO 2 5 pairs, and the high reflection film 13 is made of the same 4 pairs of dielectric multilayer reflection films. The film thicknesses of α-Si (amorphous-Si) and SiO 2 forming a pair are λ / 4n (λ: oscillation wavelength, n: optical thickness of 1/4 of oscillation wavelength, respectively).
Refractive index). The reflectance is determined by the number of pairs,
80% for 1 pair, 96% for 2 pairs, 98% for 3 pairs, 4
The reflectance is 99% for the pair and 99% or more for the pair.
【０００３】上記半導体レーザ素子は、活性層４の上下
に配置された高反射膜１２と高反射膜１３で共振器を形
成して、レーザ発振をおこなう。また、この半導体レー
ザ素子１４は、図２に示すように、Ａｕパッド１５を介
して、ジャンクションダウンにＳｉなどのヒートシンク
１６上にボンディングされ、活性層４で発生する熱を効
率よく放散している。この熱放散は、面発光半導体レー
ザ素子において、特に重要な課題になっている。その理
由は、熱放散が悪いと、しきい値電流密度が高くなり、
素子抵抗も大きくなるため、発熱により室温での動作が
困難になるからである。多層反射膜は、上記例のように
誘電体多層膜で構成されるとは限らず、半導体多層膜で
構成される場合もある。例えば、ＩｎＰ／ＩｎＧａＡｓ
Ｐ（λg ＝１．１μｍ）で構成される半導体多層膜が用
いられる。半導体多層膜を反射膜に用いると、素子作製
プロセスが容易になるという利点がある。一方、誘電体
多層膜を反射膜に用いると、少ないペア数で高反射率が
得られるが、素子作製プロセスが複雑になる。このよう
な多層反射膜のペアを構成する材質は、屈折率、格子歪
み、熱膨張係数、成膜条件などを考慮して選択する。屈
折率差の大きい材質でペアを構成すると、大きな反射率
が得られ、かつ、その帯域も広くなる。In the above semiconductor laser device, a resonator is formed by the high reflection film 12 and the high reflection film 13 arranged above and below the active layer 4 to perform laser oscillation. Further, as shown in FIG. 2, the semiconductor laser device 14 is bonded to a heat sink 16 such as Si in a junction-down manner via Au pads 15 to efficiently dissipate heat generated in the active layer 4. . This heat dissipation is a particularly important issue in the surface emitting semiconductor laser device. The reason is that if the heat dissipation is poor, the threshold current density becomes high,
This is because the element resistance also increases, and it becomes difficult to operate at room temperature due to heat generation. The multilayer reflective film is not limited to the dielectric multilayer film as in the above example, but may be a semiconductor multilayer film. For example, InP / InGaAs
A semiconductor multilayer film composed of P (λ g = 1.1 μm) is used. The use of the semiconductor multilayer film as the reflective film has an advantage of facilitating the device manufacturing process. On the other hand, when the dielectric multilayer film is used for the reflective film, high reflectance can be obtained with a small number of pairs, but the device manufacturing process becomes complicated. The material forming such a pair of multilayer reflective films is selected in consideration of the refractive index, lattice distortion, coefficient of thermal expansion, film forming conditions and the like. When the pair is made of a material having a large difference in refractive index, a large reflectance can be obtained and the band thereof can be widened.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上述の
面発光半導体レーザ素子では、活性層に発生した熱の放
散効率に限界があった。その原因は、高反射膜に熱伝導
率が低いＳｉＯ2 膜あるいはＩｎＧａＡｓＰを用いてい
るからである。因みに、熱伝導率は、α−Ｓｉでは１．
４５Ｗ／（ｃｍ・ｄｅｇ）、ＩｎＰでは０．６８Ｗ／
（ｃｍ・ｄｅｇ）であるのに対して、ＳｉＯ2 では、そ
れらの５０〜１００分の１である０．０１４Ｗ／（ｃｍ
・ｄｅｇ）であり、ＩｎＧａＡｓＰでは０．０３６Ｗ／
（ｃｍ・ｄｅｇ）という低い値である。 本発明の目的
は、半導体レーザ素子、特に面発光半導体レーザ素子に
おいて、活性層で発生した熱を効率良く放散させること
ができる反射膜を提供することである。However, in the above-mentioned surface emitting semiconductor laser device, there is a limit in the efficiency of dissipation of heat generated in the active layer. The reason is that the SiO 2 film or InGaAsP having a low thermal conductivity is used for the high reflection film. By the way, the thermal conductivity of α-Si is 1.
45 W / (cm · deg), InP 0.68 W /
(Cm · deg), SiO 2 is 0.014 W / (cm), which is 50 to 1/100 of those.
.Deg), and 0.036 W / for InGaAsP
It is a low value of (cm · deg). An object of the present invention is to provide a reflective film capable of efficiently dissipating heat generated in an active layer in a semiconductor laser device, particularly in a surface emitting semiconductor laser device.
【０００５】[0005]
【課題を解決するための手段】本発明は上記問題点を解
決した半導体レーザ素子を提供するもので、レーザ光を
反射する多層反射膜を有し、該多層反射膜は屈折率の異
なる２種類の層を交互に重ねて構成されており、前記２
種類の層の光学的厚さはλ／４（λ：レーザ発振波長）
である半導体レーザ素子において、多層反射膜を構成す
る２種類の層のうちの１種類は、ＡｌＮ、ＧａＰまたは
ＡｌＰからなることを特徴とするものである。DISCLOSURE OF THE INVENTION The present invention provides a semiconductor laser device which solves the above problems, and has a multilayer reflective film for reflecting laser light, and the multilayer reflective film is of two types having different refractive indices. The layers of the above are alternately stacked.
The optical thickness of each type of layer is λ / 4 (λ: laser oscillation wavelength)
In the semiconductor laser device as described above, one of the two types of layers forming the multilayer reflective film is characterized by being made of AlN, GaP or AlP.
【０００６】[0006]
【作用】ＡｌＮの熱伝導率は１．０Ｗ／（ｃｍ・ｄｅ
ｇ）であり、Ｓｉと比較しても遜色のない値であり、Ｓ
ｉＯ2 の熱伝導率の数十倍の大きさである。また、Ａｌ
Ｎの屈折率は２．０であり、誘電体高反射膜として使用
できる。従って、ＡｌＮを含む多層反射膜を用いると、
従来のα−ＳｉとＳｉＯ2 からなる多層反射膜よりも、
活性層に発生した熱の放散が向上する。また、ＧａＰは
屈折率が２．５、熱伝導率が１．１Ｗ／（ｃｍ・ｄｅ
ｇ）であり、ＡｌＰは屈折率が３．４、熱伝導率が０．
９Ｗ／（ｃｍ・ｄｅｇ）である。このように、ＧａＰお
よびＡｌＰは、屈折率と熱伝導率がともに比較的大きな
値を有しているので、多層反射膜を構成する材質として
好適である。[Function] The thermal conductivity of AlN is 1.0 W / (cm · de
g), which is comparable to Si, and S
It is several tens of times the thermal conductivity of iO 2 . Also, Al
N has a refractive index of 2.0 and can be used as a dielectric high reflection film. Therefore, when a multilayer reflective film containing AlN is used,
Compared with the conventional multilayer reflective film consisting of α-Si and SiO 2 ,
Dissipation of heat generated in the active layer is improved. GaP has a refractive index of 2.5 and a thermal conductivity of 1.1 W / (cm · de)
g), and AlP has a refractive index of 3.4 and a thermal conductivity of 0.
It is 9 W / (cm · deg). As described above, since GaP and AlP have a relatively large value in both the refractive index and the thermal conductivity, they are suitable as the material forming the multilayer reflective film.
【０００７】[0007]
【実施例】以下、実施例に基づいて本発明を詳細に説明
する。 （実施例１）従来技術の説明に用いた図１に示す垂直共
振器型面発光半導体レーザ素子において、高反射膜１
２、１３を、α−Ｓｉ／ＡｌＮのペアからなる誘電体多
層反射膜で構成する。これらの高反射膜１２、１３は、
以下のように設定する。即ち、ＩｎＧａＡｓＰ活性層４
の発振波長λを１．３μｍとし、α−ＳｉおよびＡｌＮ
の膜厚さを、それぞれ発振波長の１／４の光学的厚さ、
λ／４ｎに設定する。そうすると、α−Ｓｉの厚さは１
００ｎｍ（１．３×１０3 ／（４×３．４４））、Ａｌ
Ｎの厚さは１６０ｎｍ（１．３×１０3 ／（４×２．
０））になる。EXAMPLES The present invention will be described in detail below based on examples. (Embodiment 1) In the vertical cavity surface emitting semiconductor laser device shown in FIG.
2 and 13 are composed of a dielectric multilayer reflective film composed of a pair of α-Si / AlN. These highly reflective films 12 and 13 are
Set as follows. That is, the InGaAsP active layer 4
Oscillation wavelength λ of 1.3 μm, α-Si and AlN
The optical thickness of 1/4 of the oscillation wavelength,
Set to λ / 4n. Then, the thickness of α-Si is 1
00 nm (1.3 × 10 3 /(4×3.44)), Al
The thickness of N is 160 nm (1.3 × 10 3 / (4 × 2.
0)).
【０００８】ところで、誘電体多層反射膜の反射率Ｒは
次式で表される。即ち、 Ｒ＝｛〔ｎS （ｎH ／ｎL ）2n−１〕／〔ｎS （ｎH ／
ｎL ）2n＋１〕｝2 ここで、 ｎS ：多層反射膜に隣接する層の屈折率 ｎH ：高い方の屈折率 ｎL ：低い方の屈折率 ｎ ：ペア数 従って、上記式から本実施例の誘電体多層反射膜の反射
率は、積層ペア数が３では９５％、４ペアでは９９％、
５ペアでは９９．５％になる。上述のα−Ｓｉ／ＡｌＮ
高反射膜を用いることにより、従来のα−Ｓｉ／ＳｉＯ
2 高反射膜を用いた場合に比較して、ＣＷ発振の温度が
数１０℃も上昇する。By the way, the reflectance R of the dielectric multilayer reflection film is expressed by the following equation. That, R = {[n S (n H / n L ) 2n -1 ) / (n S (n H /
n L ) 2n +1]} 2 where n S : refractive index of a layer adjacent to the multilayer reflective film n H : higher refractive index n L : lower refractive index n: number of pairs Therefore, from the above equation, The reflectance of the dielectric multilayer reflective film of the example is 95% when the number of laminated pairs is 3, and 99% when the number of laminated pairs is 4,
It becomes 99.5% in 5 pairs. Α-Si / AlN mentioned above
By using a highly reflective film, conventional α-Si / SiO
(2) The temperature of CW oscillation rises by several tens of degrees Celsius as compared with the case where a high reflection film is used.
【０００９】（実施例２）発振波長λを１．３μｍとし
て、多層反射膜をＧａＰ／ＩｎＰで構成し、ＧａＰ層
（ｎ＝２．５）の厚さを１３０ｎｍ、ＩｎＰ層（ｎ＝
３．２）の厚さを１００ｎｍとする。従来のＩｎＰ／Ｉ
ｎＧａＡｓＰ多層反射膜と比較すると、ＩｎＧａＡｓＰ
の熱伝導率が０．０３６Ｗ／（ｃｍ・ｄｅｇ）であり、
ＧａＰの約１／２０程度であることから、本実施例の熱
伝導率は従来例に比較して格段に向上する。その上、従
来例の屈折率差がＩｎＰ／ＩｎＧａＡｓＰではΔｎ＝
０．１と小さく、高反射の帯域が狭く、また、高反射率
を得るためのペア数も多くなる。一方、本実施例では、
１０ペア程度で約９９％以上の反射率が得られる。(Embodiment 2) The oscillation wavelength λ is 1.3 μm, the multilayer reflection film is composed of GaP / InP, the thickness of the GaP layer (n = 2.5) is 130 nm, and the InP layer (n = n).
The thickness of 3.2) is 100 nm. Conventional InP / I
Compared with nGaAsP multilayer reflective film, InGaAsP
Has a thermal conductivity of 0.036 W / (cm · deg),
Since it is about 1/20 of that of GaP, the thermal conductivity of this embodiment is remarkably improved as compared with the conventional example. In addition, in the case where the refractive index difference of the conventional example is InP / InGaAsP, Δn =
It is as small as 0.1, the band of high reflection is narrow, and the number of pairs for obtaining high reflectance is large. On the other hand, in this embodiment,
With about 10 pairs, a reflectance of about 99% or more can be obtained.
【００１０】（実施例３）発振波長λを１．３μｍとし
て、多層反射膜をＡｌＰ／ＧａＰで構成し、ＡｌＰ層
（ｎ＝３．４）の厚さを９６ｎｍ、ＧａＰ層（ｎ＝２．
５）の厚さを１３０ｎｍとする。このように、実施例２
における高屈折率側をＩｎＰ（熱伝導率：０．６８Ｗ／
（ｃｍ・ｄｅｇ））からＡｌＰ（熱伝導率：０．９Ｗ／
（ｃｍ・ｄｅｇ））に代えると、熱放散および屈折率差
がともに大きくなり、８ペア程度で約９９％の反射率が
得られる。なお、本実施例の多層反射膜は、面発光半導
体レーザ素子のみならず、ファブリ・ペロー型半導体レ
ーザ素子にも適用できる。(Embodiment 3) The oscillation wavelength λ is 1.3 μm, the multilayer reflection film is made of AlP / GaP, the thickness of the AlP layer (n = 3.4) is 96 nm, and the GaP layer (n = 2.
The thickness of 5) is set to 130 nm. Thus, Example 2
The high refractive index side in InP (heat conductivity: 0.68 W /
(Cm · deg)) to AlP (thermal conductivity: 0.9 W /
If (cm · deg)) is substituted, both heat dissipation and the difference in refractive index become large, and a reflectance of about 99% can be obtained with about 8 pairs. The multilayer reflective film of this embodiment can be applied not only to the surface emitting semiconductor laser device but also to the Fabry-Perot type semiconductor laser device.
【００１１】[0011]
【発明の効果】以上説明したように本発明によれば、レ
ーザ光を反射する多層反射膜を有し、該多層反射膜は屈
折率の異なる２種類の層を交互に重ねて構成されてお
り、前記２種類の層の光学的厚さはλ／４（λ：レーザ
発振波長）である半導体レーザ素子において、多層反射
膜を構成する２種類の層のうちの１種類は、ＡｌＮ、Ｇ
ａＰまたはＡｌＰからなるため、活性層に発生した熱の
放散がよくなるので、特に面発光半導体レーザ素子の動
作特性が向上するという優れた効果がある。As described above, according to the present invention, there is provided a multi-layer reflective film that reflects laser light, and the multi-layer reflective film is formed by alternately laminating two kinds of layers having different refractive indexes. In the semiconductor laser device in which the optical thicknesses of the two types of layers are λ / 4 (λ: laser oscillation wavelength), one of the two types of layers forming the multilayer reflective film is AlN, G
Since it is made of aP or AlP, the heat generated in the active layer is well dissipated, so that there is an excellent effect that the operation characteristics of the surface emitting semiconductor laser device are improved.
【図１】垂直共振器型面発光半導体レーザ素子の断面説
明図である。FIG. 1 is a cross-sectional explanatory view of a vertical cavity surface emitting semiconductor laser device.
【図２】ヒートシンク上に上記半導体レーザ素子を搭載
した状態の説明図である。FIG. 2 is an explanatory diagram showing a state in which the semiconductor laser device is mounted on a heat sink.
１ 基板 ２ エッチング停止層 ３、５、８ クラッド層 ４ 活性層 ６、７ ブロッキング層 ９ コンタクト層 １０、１１ 電極 １２、１３ 高反射膜 １４ 半導体レーザ素子 １５ Ａｕパッド １６ ヒートシンク 1 substrate 2 etching stop layer 3, 5, 8 clad layer 4 active layer 6, 7 blocking layer 9 contact layer 10, 11 electrode 12, 13 highly reflective film 14 semiconductor laser device 15 Au pad 16 heat sink
Claims (2)
該多層反射膜は屈折率の異なる２種類の層を交互に重ね
て構成されており、前記２種類の層の光学的厚さはλ／
４（λ：レーザ発振波長）である半導体レーザ素子にお
いて、多層反射膜を構成する２種類の層のうちの１種類
は、ＡｌＮ、ＧａＰまたはＡｌＰからなることを特徴と
する半導体レーザ素子。1. A multilayer reflection film for reflecting laser light,
The multilayer reflective film is formed by alternately stacking two types of layers having different refractive indexes, and the optical thickness of the two types of layers is λ /
In the semiconductor laser device having a wavelength of 4 (λ: laser oscillation wavelength), one of the two types of layers forming the multilayer reflective film is made of AlN, GaP or AlP.
れていることを特徴とする請求項１記載の半導体レーザ
素子。2. The semiconductor laser device according to claim 1, wherein the multilayer reflective film is composed of GaP and AlN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11768194A JPH07302953A (en) | 1994-05-06 | 1994-05-06 | Semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11768194A JPH07302953A (en) | 1994-05-06 | 1994-05-06 | Semiconductor laser element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07302953A true JPH07302953A (en) | 1995-11-14 |
Family
ID=14717660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11768194A Pending JPH07302953A (en) | 1994-05-06 | 1994-05-06 | Semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07302953A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1146038A (en) * | 1997-05-29 | 1999-02-16 | Nichia Chem Ind Ltd | Nitride semiconductor laser element and manufacture of the same |
| EP1298461A1 (en) * | 2001-09-27 | 2003-04-02 | Interuniversitair Microelektronica Centrum Vzw | Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR |
| EP1302791A1 (en) * | 2001-09-27 | 2003-04-16 | Interuniversitair Microelektronica Centrum Vzw | Distributed Bragg Reflector comprising a GaP layer, and a semiconductor resonant cavity device comprising such a DBR |
| JP2004039717A (en) * | 2002-07-01 | 2004-02-05 | Ricoh Co Ltd | Semiconductor distribution bragg reflector, surface luminescence type semiconductor laser, surface luminescence type semiconductor laser array, optical communication system, optical write-in system, and optical pick-up system |
| US7684456B2 (en) | 1999-08-04 | 2010-03-23 | Ricoh Company, Ltd. | Laser diode and semiconductor light-emitting device producing visible-wavelength radiation |
| US7986721B2 (en) | 2004-09-22 | 2011-07-26 | Sumitomo Electric Industries, Ltd. | Semiconductor optical device including a PN junction formed by a second region of a first conductive type semiconductor layer and a second conductive type single semiconductor layer |
-
1994
- 1994-05-06 JP JP11768194A patent/JPH07302953A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1146038A (en) * | 1997-05-29 | 1999-02-16 | Nichia Chem Ind Ltd | Nitride semiconductor laser element and manufacture of the same |
| US7684456B2 (en) | 1999-08-04 | 2010-03-23 | Ricoh Company, Ltd. | Laser diode and semiconductor light-emitting device producing visible-wavelength radiation |
| US8009714B2 (en) | 1999-08-04 | 2011-08-30 | Ricoh Company, Ltd. | Laser diode and semiconductor light-emitting device producing visible-wavelength radiation |
| US8537870B2 (en) | 1999-08-04 | 2013-09-17 | Ricoh Company, Limited | Laser diode and semiconductor light-emitting device producing visible-wavelength radiation |
| EP1298461A1 (en) * | 2001-09-27 | 2003-04-02 | Interuniversitair Microelektronica Centrum Vzw | Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR |
| EP1302791A1 (en) * | 2001-09-27 | 2003-04-16 | Interuniversitair Microelektronica Centrum Vzw | Distributed Bragg Reflector comprising a GaP layer, and a semiconductor resonant cavity device comprising such a DBR |
| JP2004039717A (en) * | 2002-07-01 | 2004-02-05 | Ricoh Co Ltd | Semiconductor distribution bragg reflector, surface luminescence type semiconductor laser, surface luminescence type semiconductor laser array, optical communication system, optical write-in system, and optical pick-up system |
| JP4497796B2 (en) * | 2002-07-01 | 2010-07-07 | 株式会社リコー | Surface emitting semiconductor laser, surface emitting semiconductor laser array, optical communication system, optical writing system, and optical pickup system |
| US7986721B2 (en) | 2004-09-22 | 2011-07-26 | Sumitomo Electric Industries, Ltd. | Semiconductor optical device including a PN junction formed by a second region of a first conductive type semiconductor layer and a second conductive type single semiconductor layer |
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