JPH0425720B2 - - Google Patents
Info
- Publication number
- JPH0425720B2 JPH0425720B2 JP8612883A JP8612883A JPH0425720B2 JP H0425720 B2 JPH0425720 B2 JP H0425720B2 JP 8612883 A JP8612883 A JP 8612883A JP 8612883 A JP8612883 A JP 8612883A JP H0425720 B2 JPH0425720 B2 JP H0425720B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- film
- laser device
- active layer
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体レーザ装置、特に高出力半導
体レーザ装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor laser device, particularly a high-power semiconductor laser device.
従来例の構成とその問題点
第１図は、従来の半導体レーザ装置を示してお
り、１は活性層、２はキヤビテイ端面に形成した
SiO2膜、３はSiO2膜２の表面に形成したAu膜、
４，５は電極である。Structure of conventional example and its problems Figure 1 shows a conventional semiconductor laser device, in which 1 is an active layer, 2 is a layer formed on the end face of a cavity.
SiO 2 film, 3 is an Au film formed on the surface of SiO 2 film 2,
4 and 5 are electrodes.
このような従来の半導体レーザにおいて、高出
力を得る方法として、第１図に示すように、半導
体レーザの二つのキヤビテイ面の一方にのみ
SiO2膜２およびAuの膜３を附着する方法が行わ
れている。しかしながら、半導体レーザをCW発
振させるためには、活性領域１は薄くしなければ
ならないので、ある程度（〜0.2μｍ）までしか厚
くできず、従つて取り出せる出力には限度があ
る。 In such conventional semiconductor lasers, as shown in Figure 1, one way to obtain high output power is to attach only one of the two cavity surfaces of the semiconductor laser.
A method of depositing a SiO 2 film 2 and an Au film 3 has been used. However, in order to cause the semiconductor laser to oscillate in a CW manner, the active region 1 must be made thin, so it can only be made thick to a certain extent (~0.2 μm), and therefore there is a limit to the output that can be extracted.
発明の目的
本発明は、前記欠点を除去し、高出力を容易に
取り出すことができる半導体レーザ装置を提供す
ることを目的とする。OBJECTS OF THE INVENTION It is an object of the present invention to provide a semiconductor laser device that eliminates the above-mentioned drawbacks and can easily output high output.
発明の構成
前記目的を達成するために、本発明の半導体レ
ーザ装置は、活性層のキヤビテイ面および側面が
絶縁膜でおおわれ、さらにその上に金属膜が付着
されるとともに、前記キヤビテイ面の一方に付着
された金属膜の一部が除去されて構成されてい
る。Structure of the Invention In order to achieve the above object, the semiconductor laser device of the present invention has a cavity surface and side surfaces of an active layer covered with an insulating film, a metal film further adhered thereon, and a metal film coated on one side of the cavity surface. A portion of the deposited metal film is removed.
実施例の説明
以下、本発明の実施例を図面を参照しながら説
明する。なお、従来例を示す第１図と同一箇所に
は同一番号を付している。DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the same parts as in FIG. 1 showing the conventional example are given the same numbers.
第２図は本発明の半導体レーザ装置の一実施例
の斜視図である。レーザ素子１０のキヤビテイ面
と側面にスパツタリングによりSiO2膜２を厚さ
2500〓だけ付着する。さらに一方のキヤビテイ面
のSiO2膜２の表面に、直径5μｍのワイアを載置
して、SiO2２の上にAuを蒸着する。蒸着後、前
記ワイアを取り除くと、キヤビテイ面の一方に窓
６が形成されたAu膜３が形成される。 FIG. 2 is a perspective view of an embodiment of the semiconductor laser device of the present invention. A thick SiO 2 film 2 is deposited on the cavity surface and side surfaces of the laser element 10 by sputtering.
Only 2500〓 will be attached. Furthermore, a wire with a diameter of 5 μm is placed on the surface of the SiO 2 film 2 on one cavity surface, and Au is vapor-deposited on the SiO 2 2. After the deposition, when the wire is removed, an Au film 3 with a window 6 formed on one of the cavity surfaces is formed.
この構造の半導体レーザ装置はキヤビテイ面お
よび側面の四面がAuでおおわれているので、光
は多重共振し、低しきい値で発振する。そしてそ
の発振光は一つの窓６を通してのみ取り出され
る。この構造によりしきい値を低くすることがで
きるので、活性層１の厚さを１〜2μｍにまで大
きくしても、容易にCW発振を得ることができ
る。したがつて、活性層の厚さを厚くすれば高密
度出力にも耐えられるので、高出力室温CW発振
が容易に得られる。 In a semiconductor laser device with this structure, the cavity surface and all four side surfaces are covered with Au, so light undergoes multiple resonance and oscillates at a low threshold. The oscillated light is extracted only through one window 6. Since this structure allows the threshold value to be lowered, CW oscillation can be easily obtained even if the thickness of the active layer 1 is increased to 1 to 2 μm. Therefore, by increasing the thickness of the active layer, it can withstand high-density output, and high-output room temperature CW oscillation can be easily obtained.
第３図は、活性層の厚さを2μｍとして構成さ
れた本発明のレーザ装置の電流−出力特性(a)を、
活性層の厚さが0.2μｍの第１図の構成の半導体レ
ーザ装置の特性(b)と比較して示した図である。し
きい値Ithはほとんど変らないが、最大出力は、
CW発振で500ｍＷ以上得ることができ、従来の
半導体レーザの10倍以上の出力が得られる。ま
た、本発明の半導体レーザは、50℃、300ｍＷで
500H以上のCW発振を再現性よく実現した。 FIG. 3 shows the current-output characteristics (a) of a laser device of the present invention configured with an active layer thickness of 2 μm.
FIG. 2 is a diagram showing a comparison with characteristics (b) of a semiconductor laser device having the configuration shown in FIG. 1 in which the active layer has a thickness of 0.2 μm. Although the threshold value Ith hardly changes, the maximum output is
It is possible to obtain more than 500mW with CW oscillation, which is more than 10 times the output of conventional semiconductor lasers. Furthermore, the semiconductor laser of the present invention can be used at 50°C and 300mW.
Achieved CW oscillation of 500H or more with good reproducibility.
発明の効果
本発明の半導体レーザ装置は、キヤビテイ面お
よび側面がAu膜で囲まれているので、光が多重
共振を起こし、しきい値電流がきわめて低くな
る。また活性層の厚さを大きくすることにより、
容易に高出力を得ることができる。Effects of the Invention In the semiconductor laser device of the present invention, since the cavity surface and side surfaces are surrounded by the Au film, multiple resonances occur in the light, and the threshold current becomes extremely low. In addition, by increasing the thickness of the active layer,
High output can be easily obtained.
第１図は、従来の半導体レーザ装置の側面図、
第２図は、本発明の実施例の半導体レーザ装置の
斜視図、第３図は本発明(a)と従来例(b)の電流−出
力特性を示す図である。
１……活性層、４，５……電極、２……SiO2
膜、３……Au膜、６……窓。
FIG. 1 is a side view of a conventional semiconductor laser device.
FIG. 2 is a perspective view of a semiconductor laser device according to an embodiment of the present invention, and FIG. 3 is a diagram showing current-output characteristics of the present invention (a) and the conventional example (b). 1... Active layer, 4, 5... Electrode, 2... SiO 2
Film, 3...Au film, 6...window.
Claims (1)
おおわれ、前記キヤビテイ面の一方の面の前記絶
縁膜上の一部を除いて、前記絶縁膜の上に金属膜
が付着されたことを特徴とする半導体レーザ装
置。1. The side surfaces of the active layer and the cavity surface are covered with an insulating film, and a metal film is attached on the insulating film except for a part of the insulating film on one side of the cavity surface. Semiconductor laser equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8612883A JPS59211292A (en) | 1983-05-16 | 1983-05-16 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8612883A JPS59211292A (en) | 1983-05-16 | 1983-05-16 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59211292A JPS59211292A (en) | 1984-11-30 |
| JPH0425720B2 true JPH0425720B2 (en) | 1992-05-01 |
Family
ID=13878063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8612883A Granted JPS59211292A (en) | 1983-05-16 | 1983-05-16 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59211292A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS64785A (en) * | 1986-07-29 | 1989-01-05 | Ricoh Co Ltd | Manufacture of mask semiconductor laser |
| JPS63198390A (en) * | 1987-02-13 | 1988-08-17 | Ricoh Co Ltd | Manufacture of mask semiconductor laser |
| JP2688897B2 (en) * | 1987-03-13 | 1997-12-10 | シャープ株式会社 | Semiconductor laser device |
| JPS63228793A (en) * | 1987-03-18 | 1988-09-22 | Fujitsu Ltd | Semiconductor laser device |
| JPS63164265U (en) * | 1987-04-15 | 1988-10-26 | ||
| US4910166A (en) * | 1989-01-17 | 1990-03-20 | General Electric Company | Method for partially coating laser diode facets |
-
1983
- 1983-05-16 JP JP8612883A patent/JPS59211292A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59211292A (en) | 1984-11-30 |
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