JPH02137287A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH02137287A JPH02137287A JP29143788A JP29143788A JPH02137287A JP H02137287 A JPH02137287 A JP H02137287A JP 29143788 A JP29143788 A JP 29143788A JP 29143788 A JP29143788 A JP 29143788A JP H02137287 A JPH02137287 A JP H02137287A
- Authority
- JP
- Japan
- Prior art keywords
- film
- al2o3
- semiconductor laser
- reflection film
- high reflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 4
- 229910052593 corundum Inorganic materials 0.000 abstract 4
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は半導体レーザ装置に関するものであり、特に高
出力型のものに適する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a semiconductor laser device, and is particularly suitable for a high output type device.
（ロ）従来の技術
従来、ファブリペロ共振器を有する半導体レーザ装置に
おいては、その共振器端面の一方に高反射膜が、他方に
低反射膜が形成されている。このうち高反射膜として、
非晶質Ｓｉ：Ｈ膜（以下、ａ−５ｉ：Ｈ膜と記す）とＳ
ｉ Ｏｓ膜の２層膜、あるいは多層膜（特開昭６０−
２３ ’５４８２号公報）や、ａ−５ｉ：）Ｉ膜とＡ
ｌ ｘ Ｏｓ膜の２層膜、あるいは多層膜（ＳＡＮＹＯ
ＴＥＣＨＮＩＣＡｔ、 ＲＥＶＩＥＷ、 Ｖｏｌ
、２０． Ｎｏ、１． Ｆｅｂ。(B) Prior Art Conventionally, in a semiconductor laser device having a Fabry-Perot cavity, a high reflection film is formed on one end face of the cavity and a low reflection film is formed on the other end face of the cavity. Among these, as a highly reflective film,
Amorphous Si:H film (hereinafter referred to as a-5i:H film) and S
Two-layer film or multilayer film of iOs film (Japanese Patent Application Laid-open No. 1983-
23 '5482), a-5i:) I membrane and A
l x Os film or multilayer film (SANYO
TECHNICAt, REVIEW, Vol.
, 20. No, 1. Feb.
１９８８）が知られている。こうして、この種半導体レ
ーザ装置では、低反射膜側がら高出力のレーザ光が出射
され、高反射膜側から低出力のレーザ光が出射される。1988) is known. Thus, in this type of semiconductor laser device, high-power laser light is emitted from the low-reflection film side, and low-power laser light is emitted from the high-reflection film side.
この低出力のレーザ光は通常、半導体レーザ装置の出力
モニタに利用される。即ち、低出力のレーザ光は、その
出射方向に配置された受光素子によって受光され、その
出力に応じた電気信号に変換される。この電気信号は、
ＡＰＣ（ａｕｔｏｍａｔｉｃ ｐｏｗｅｒｃｏｎｔｒ
ｏｌ）回路に入力される。ＡＰＣ回路は、入力された電
気信号の値、即ちレーザ光の出力の値に応じて、半導体
レーザ装置の駆動電流を制御し、その値を一定に保つ。This low-power laser light is normally used to monitor the output of a semiconductor laser device. That is, the low-power laser light is received by a light-receiving element arranged in the direction in which the laser light is emitted, and converted into an electrical signal according to its output. This electrical signal is
APC (automatic power controller)
ol) input to the circuit. The APC circuit controls the drive current of the semiconductor laser device according to the value of the input electric signal, that is, the value of the output of the laser light, and keeps the value constant.
（ハ）発明が解決しようとする課題
しかし乍ら、高反射膜の一材料としてａ−５ｉ【（を用
いた半導体レーザ装置では、レーザ光の高出力化、ある
いは長時間動作によりａ−８ｉ：１（膜が光を多く吸収
し、オプティカルダメージを受け、その結果高反射膜の
反射率が経時的に変化してしまう （但し、Ａ ｌ ＊
Ｏｓ膜はレーザ光を吸収しないため斯る反射率の変化
に関与しない）。これにより、低反射膜から出射される
レーザ光の出力が一定であるにもかかわらず、高反射膜
から出射されるレーザ光、即ちモニター用レーザ光の出
力が低下していくといった現象が生じる。したがって、
従来の半導体レーザ装置には、低反射膜から出射される
レーザ光を正確にモニタすることができないといった欠
点があった。(c) Problems to be Solved by the Invention However, in a semiconductor laser device using a-5i as a material for a high-reflection film, a-8i: 1 (The film absorbs a lot of light and suffers optical damage, resulting in the reflectance of the highly reflective film changing over time (However, A l *
Since the Os film does not absorb laser light, it does not contribute to such changes in reflectance). This causes a phenomenon in which the output of the laser beam emitted from the high reflection film, that is, the output of the monitoring laser beam, decreases even though the output of the laser light emitted from the low reflection film is constant. therefore,
Conventional semiconductor laser devices have had the disadvantage that laser light emitted from a low reflection film cannot be accurately monitored.
本発明は斯る点に鑑み、レーザ光の高出力化及び長時間
動作によって高反射膜の反射率が変化しない半導体レー
ザ装置を提供するものである。In view of these points, the present invention provides a semiconductor laser device in which the reflectance of a high-reflection film does not change due to increased laser light output and long-time operation.
（ニ）課題を解決するための手段
本発明は、レーザ光を出射する共振器端面上の一方に高
反射膜を、他方に低反射膜を、夫々備えた半導体レーザ
装置であって、上述の課題を解決するため、上記高反射
膜はＡ ｌ ｔ Ｏｓ膜とＡ１．Ｎ膜からなる多層膜で
あることを特徴とする。(d) Means for Solving the Problems The present invention is a semiconductor laser device comprising a high reflection film on one side and a low reflection film on the other side of a resonator end face that emits laser light. In order to solve the problem, the above-mentioned high reflection film is composed of an Al t Os film and an A1. It is characterized by being a multilayer film made of N film.
（ホ）作用
ＡｌＮ膜は単結晶のもので６．０４ｅＶ、非晶質のもの
でも５．７ｅＶと広いバンドギャップを有するため、ａ
−５ｉ：Ｈに比して光の吸収が少なく、オプティカルダ
メージを受けにくい。また、Ａ ｌ ｓｏ ＋膜とＡ２
Ｎ膜は、構成金属元素が同一であるため、同一の成膜装
置で、これらの多層膜を形成しても、各層の界面で反応
しにくい。(e) Functional AlN film has a wide band gap of 6.04 eV for a single crystal film and 5.7 eV for an amorphous film, so a
-5i: Less light absorption than H and less susceptible to optical damage. In addition, A l so + membrane and A2
Since the N films have the same constituent metal elements, even if these multilayer films are formed using the same film forming apparatus, reactions are unlikely to occur at the interfaces between the layers.
（へ）実施例
第１図は本発明装置の一実施例を示し、（１）は図中左
右方向にファブリペロ共振器を有する、例えばＧａＡｊ
！Ａｓ系の半導体レーザチップ、（２）は半導体レーザ
チップ（１）の一方の共振器端面上に形成された低反射
膜で、ＡＪ！、Ｏ，膜（３）からなり、スパッタ法を用
いて、レーザ光の媒質同波長の１／′４程度の膜厚に被
着される。（４）は半導体レーザチップ（１）の他方の
共振器端面上に形成された高反射膜で、Ａ ｇ １０
Ｓ膜（５）とＡｌＮ膜（６）からなり、スパッタ法を用
いて、夫々レーザ光の媒質内、波長の１膜４程度の膜厚
に、例えば３層ずつ被着される。ここで、半導体レーザ
チップ（１）の発振波長を８３０ｎｍとすると、Ａｌ
！ ０１膜（３）（５）とＡｌＮ膜（６）の膜厚は夫々
１２６ｎｍ、１１０８ｎ程度とすればよい。また、これ
らの膜のスパッタ法による成膜条件を表１に示す。(v) Embodiment FIG. 1 shows an embodiment of the device of the present invention, and (1) shows an example of a GaAj
! The As-based semiconductor laser chip (2) is a low reflection film formed on one cavity end face of the semiconductor laser chip (1). , O, film (3), which is deposited using a sputtering method to a thickness of approximately 1/4 of the wavelength of the medium of the laser beam. (4) is a high reflection film formed on the other cavity end face of the semiconductor laser chip (1), with A g 10
The film is composed of an S film (5) and an AlN film (6), each of which is deposited in the medium of the laser beam, for example, in three layers, to a film thickness of about 4 wavelengths, using a sputtering method. Here, if the oscillation wavelength of the semiconductor laser chip (1) is 830 nm, then Al
! The film thicknesses of the 01 films (3) and (5) and the AlN film (6) may be approximately 126 nm and 1108 nm, respectively. Table 1 shows the conditions for forming these films by sputtering.
表１
表 ２
このようにして形成された本実施例装置における低反射
膜及び高反射膜の反射率は夫々、８％、６７％となる。Table 1 Table 2 The reflectance of the low reflection film and the high reflection film in the device of this example formed in this way is 8% and 67%, respectively.
また表２に、高反射膜（４）におけるＡｊｉｒｏｓ膜（
５）とＡｌＮ膜（６）の積層数と反射率との関係を、Ａ
Ｊ！１０３膜とａ−５ｉ：Ｈ膜を用いた従来装置のもの
と共に示す。Table 2 also shows the Ajiros film (
The relationship between the number of stacked layers and reflectance of 5) and AlN film (6) is expressed as A
J! It is shown together with a conventional device using a 103 film and an a-5i:H film.
二二で、Ａｌｔｏｓ、ＡＩＮ％ ａ−５１： Ｈの屈折
率は夫々、１．６５．１．９６．３． １であり、本実
施例装置に用いるＡＩＮはａ−５ｉ：Ｈより屈折率が小
さい。このため、本実施例装置の高反射膜（４）は従来
装置のそれよりもＡｆｉ、Ｏ，膜（５）とＡ Ｉ Ｎ（
６）の積層数を多くしなければならない。しかし、斯る
高反射膜（４）は製造工程上問題を生じることなく、容
易に形成できる。22, the refractive index of Altos, AIN% a-51:H is 1.65.1.96.3, respectively. 1, and the refractive index of AIN used in the device of this embodiment is smaller than that of a-5i:H. For this reason, the high reflection film (4) of the device of this embodiment has higher Afi, O, film (5) and A I N (
6) The number of laminated layers must be increased. However, such a highly reflective film (4) can be easily formed without causing any problems in the manufacturing process.
第２図は、本実施例装置と、高反射膜にＡｌ。FIG. 2 shows the device of this embodiment and the high reflection film made of Al.
０、膜とａ−５ｉ：Ｈ膜を用いた従来装置を動作させた
時のモニタ出力、即ち高反射膜から出射されるレーザ光
の出力の経時変化を測定し、初期動作時の出力に規格化
したものである。ここで、本実施例装置及び従来装置共
生導体レーザチップとして、インナーストライプ型のＧ
ａＡＺＡｓ系の乙のを用い、室温５０℃の条件の下で低
反射膜から出射されるレーザ光の出力を５０ｍＷとした
。0, film and a-5i: We measured the monitor output when operating the conventional device using the H film, that is, the change over time in the output of the laser light emitted from the high reflection film, and standardized the output at the initial operation. It has become. Here, the inner stripe type G
AAZAs-based laser beam was used, and the output of the laser light emitted from the low reflection film was set to 50 mW at a room temperature of 50°C.
図から明らかな（＋Ｕ＜、本実施例装置では長時間にわ
たって、略一定のモニタ出力が得られる。As is clear from the figure (+U<, the device of this embodiment can obtain a substantially constant monitor output over a long period of time.
以上、本実施例では、半導体レーザチップ（１）として
発振波長８３０ｎｍのＧａＡＪ！Ａｓ系のものを用いた
が、本発明装置の半導体レーザチ・ンプ（１）はこれに
限ることなく、ＡｆｌＮ膜（６）のバンドギャップに相
当する波長、即ち、ＡＩＮ膜（６）が単結晶のもので２
０６，５ｎｍ、非晶質のもので２１７．’５ｎｍ以との
発頭波長を有するものであればよい。As described above, in this embodiment, the semiconductor laser chip (1) is made of GaAJ! with an oscillation wavelength of 830 nm! Although the As-based semiconductor laser chip (1) of the device of the present invention is not limited to this, the wavelength corresponding to the band gap of the AflN film (6), that is, the AIN film (6) is a single crystal. 2 things
06.5 nm, amorphous 217. Any material having a seeding wavelength of 5 nm or more may be used.
（ト）発明の効果 本発明装置によれば、高反射膜として、Ａｌ。(g) Effects of the invention According to the device of the present invention, Al is used as the high reflection film.
ｏ、ｌｌ＊とＡｊ２’Ｎｌ］＠からなる多層膜を用いる
ことによって、半導体レーザを高出力化または長時間動
作させた場合でも安定したモニタ出力が得られ、正確な
モニタが行える。従って、本発明装置は、低反射１漠か
ら出射されるレーザ光を精度良く制御することが可能で
ある。また、本発明装置は高出力の゛卜導体装置におい
て特に有効であることから、書き換え可能なＣＤ、ＶＤ
、高速レーザプリンタ等、光情報機器への応用に適する
。By using a multilayer film consisting of o, ll* and Aj2'Nl]@, a stable monitor output can be obtained even when the semiconductor laser is operated at high output or for a long time, and accurate monitoring can be performed. Therefore, the device of the present invention can accurately control the laser beam emitted from a low reflection area. Furthermore, since the device of the present invention is particularly effective in high-output conductor devices, it can be used on rewritable CDs, VD
Suitable for application to optical information equipment such as , high-speed laser printers, etc.
第１図は本発明の一実施例を示す断面図、第２図は、本
発明装置及び従来装置において高反射膜側から出射され
るレーザ光の出力の経時変化を示す特性図である。FIG. 1 is a cross-sectional view showing an embodiment of the present invention, and FIG. 2 is a characteristic diagram showing changes over time in the output of laser light emitted from the high reflection film side in the device of the present invention and the conventional device.
Claims (1)
膜を、他方に低反射膜を、夫々備えた半導体レーザ装置
において、上記高反射膜はＡｌ＿２Ｏ＿３膜とＡｌＮ膜
からなる多層膜であることを特徴とする半導体レーザ装
置。(1) In a semiconductor laser device having a high reflection film on one side and a low reflection film on the other side of a resonator end face that emits laser light, the high reflection film is a multilayer film consisting of an Al_2O_3 film and an AlN film. A semiconductor laser device characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29143788A JPH02137287A (en) | 1988-11-17 | 1988-11-17 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29143788A JPH02137287A (en) | 1988-11-17 | 1988-11-17 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02137287A true JPH02137287A (en) | 1990-05-25 |
Family
ID=17768859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29143788A Pending JPH02137287A (en) | 1988-11-17 | 1988-11-17 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02137287A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04177783A (en) * | 1990-11-11 | 1992-06-24 | Canon Inc | Semiconductor device |
| EP0949731A2 (en) * | 1998-04-06 | 1999-10-13 | Matsushita Electronics Corporation | Nitride semiconductor laser device |
| US6370177B1 (en) | 1998-03-30 | 2002-04-09 | Kabushiki Kaisha Toshiba | Semiconductor laser and method of manufacturing the same |
| WO2004004085A2 (en) * | 2002-06-26 | 2004-01-08 | Ammono Sp.Zo.O. | Nitride semiconductor laser device and a method for improving its performance |
| KR100550924B1 (en) * | 2004-09-14 | 2006-02-13 | 삼성전기주식회사 | Multiwavelength laser diode |
| US7057211B2 (en) | 2001-10-26 | 2006-06-06 | Ammono Sp. Zo.O | Nitride semiconductor laser device and manufacturing method thereof |
| US7132730B2 (en) | 2001-10-26 | 2006-11-07 | Ammono Sp. Z.O.O. | Bulk nitride mono-crystal including substrate for epitaxy |
| US7160388B2 (en) | 2001-06-06 | 2007-01-09 | Nichia Corporation | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| JP2007103814A (en) * | 2005-10-07 | 2007-04-19 | Sharp Corp | Nitride semiconductor light emitting device and its manufacturing method |
| US7335262B2 (en) | 2002-05-17 | 2008-02-26 | Ammono Sp. Z O.O. | Apparatus for obtaining a bulk single crystal using supercritical ammonia |
| US7364619B2 (en) | 2002-06-26 | 2008-04-29 | Ammono. Sp. Zo.O. | Process for obtaining of bulk monocrystalline gallium-containing nitride |
| US7589358B2 (en) | 2002-05-17 | 2009-09-15 | Ammono Sp. Z O.O. | Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same |
| JP2012044230A (en) * | 2011-11-30 | 2012-03-01 | Sharp Corp | Nitride semiconductor light-emitting device |
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| JPS5854691A (en) * | 1981-09-28 | 1983-03-31 | Hitachi Ltd | Semiconductor laser device |
| JPS62296490A (en) * | 1986-06-17 | 1987-12-23 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| JPS6340389A (en) * | 1986-08-04 | 1988-02-20 | Sharp Corp | Semiconductor laser |
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|---|---|---|---|---|
| JPS5854691A (en) * | 1981-09-28 | 1983-03-31 | Hitachi Ltd | Semiconductor laser device |
| JPS62296490A (en) * | 1986-06-17 | 1987-12-23 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04177783A (en) * | 1990-11-11 | 1992-06-24 | Canon Inc | Semiconductor device |
| US6370177B1 (en) | 1998-03-30 | 2002-04-09 | Kabushiki Kaisha Toshiba | Semiconductor laser and method of manufacturing the same |
| US6667187B2 (en) | 1998-03-30 | 2003-12-23 | Kabushiki Kaisha Toshiba | Semiconductor laser and method of manufacturing the same |
| EP0949731A2 (en) * | 1998-04-06 | 1999-10-13 | Matsushita Electronics Corporation | Nitride semiconductor laser device |
| EP0949731A3 (en) * | 1998-04-06 | 2000-01-26 | Matsushita Electronics Corporation | Nitride semiconductor laser device |
| US7252712B2 (en) | 2001-06-06 | 2007-08-07 | Ammono Sp. Z O.O. | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| US7160388B2 (en) | 2001-06-06 | 2007-01-09 | Nichia Corporation | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| US7057211B2 (en) | 2001-10-26 | 2006-06-06 | Ammono Sp. Zo.O | Nitride semiconductor laser device and manufacturing method thereof |
| US7132730B2 (en) | 2001-10-26 | 2006-11-07 | Ammono Sp. Z.O.O. | Bulk nitride mono-crystal including substrate for epitaxy |
| US7420261B2 (en) | 2001-10-26 | 2008-09-02 | Ammono Sp. Z O.O. | Bulk nitride mono-crystal including substrate for epitaxy |
| US7335262B2 (en) | 2002-05-17 | 2008-02-26 | Ammono Sp. Z O.O. | Apparatus for obtaining a bulk single crystal using supercritical ammonia |
| US7589358B2 (en) | 2002-05-17 | 2009-09-15 | Ammono Sp. Z O.O. | Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same |
| WO2004004085A2 (en) * | 2002-06-26 | 2004-01-08 | Ammono Sp.Zo.O. | Nitride semiconductor laser device and a method for improving its performance |
| US7315559B2 (en) | 2002-06-26 | 2008-01-01 | Ammono Sp. Z O.O. | Nitride semiconductor laser device and a method for improving its performance |
| WO2004004085A3 (en) * | 2002-06-26 | 2004-11-04 | Ammono Sp Zoo | Nitride semiconductor laser device and a method for improving its performance |
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