JPS6221867B2 - - Google Patents
Info
- Publication number
- JPS6221867B2 JPS6221867B2 JP54093942A JP9394279A JPS6221867B2 JP S6221867 B2 JPS6221867 B2 JP S6221867B2 JP 54093942 A JP54093942 A JP 54093942A JP 9394279 A JP9394279 A JP 9394279A JP S6221867 B2 JPS6221867 B2 JP S6221867B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous material
- carbon
- temperature
- based amorphous
- energy level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 45
- 239000007789 gas Substances 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000003786 synthesis reaction Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000001294 propane Substances 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical class Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910021383 artificial graphite Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5062—Borides, Nitrides or Silicides
- C04B41/5066—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/18—Conductive material dispersed in non-conductive inorganic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2918—Rod, strand, filament or fiber including free carbon or carbide or therewith [not as steel]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Dispersion Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9394279A JPS5617988A (en) | 1979-07-24 | 1979-07-24 | Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture |
| US06/170,168 US4393097A (en) | 1979-07-24 | 1980-07-18 | Electrically conductive Si3 N4 -C series amorphous material and a method of producing the same |
| US06/642,700 US4585704A (en) | 1979-07-24 | 1984-08-21 | Electrically conductive Si3 N4 --C series amorphous material and a method of processing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9394279A JPS5617988A (en) | 1979-07-24 | 1979-07-24 | Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5617988A JPS5617988A (en) | 1981-02-20 |
| JPS6221867B2 true JPS6221867B2 (US20030204162A1-20031030-M00001.png) | 1987-05-14 |
Family
ID=14096480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9394279A Granted JPS5617988A (en) | 1979-07-24 | 1979-07-24 | Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US4393097A (US20030204162A1-20031030-M00001.png) |
| JP (1) | JPS5617988A (US20030204162A1-20031030-M00001.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01116063U (US20030204162A1-20031030-M00001.png) * | 1988-01-29 | 1989-08-04 |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5462772A (en) * | 1957-06-27 | 1995-10-31 | Lemelson; Jerome H. | Methods for forming artificial diamond |
| JPS5617988A (en) * | 1979-07-24 | 1981-02-20 | Toshio Hirai | Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture |
| US4537942A (en) * | 1984-02-10 | 1985-08-27 | Minnesota Mining And Manufacturing Company | Polyhydridosilanes and their conversion to pyropolymers |
| US4704444A (en) * | 1984-02-10 | 1987-11-03 | Minnesota Mining And Manufacturing Company | Polyhydridosilanes and their conversion to pyropolymers |
| US4611035A (en) * | 1984-02-10 | 1986-09-09 | Minnesota Mining And Manufacturing Company | Polyhydridosilanes and their conversion to pyropolymers |
| US4568614A (en) * | 1984-06-27 | 1986-02-04 | Energy Conversion Devices, Inc. | Steel article having a disordered silicon oxide coating thereon and method of preparing the coating |
| JPS61174128A (ja) * | 1985-01-28 | 1986-08-05 | Sumitomo Electric Ind Ltd | レンズ成形用型 |
| DE3609503A1 (de) * | 1985-03-22 | 1986-10-02 | Canon K.K., Tokio/Tokyo | Heizwiderstandselement und heizwiderstand unter verwendung desselben |
| US4845513A (en) * | 1985-03-23 | 1989-07-04 | Canon Kabushiki Kaisha | Thermal recording head |
| US4783369A (en) * | 1985-03-23 | 1988-11-08 | Canon Kabushiki Kaisha | Heat-generating resistor and heat-generating resistance element using same |
| GB2174877B (en) * | 1985-03-23 | 1989-03-15 | Canon Kk | Thermal recording head |
| DE3609975A1 (de) * | 1985-03-25 | 1986-10-02 | Canon K.K., Tokio/Tokyo | Thermoaufzeichnungskopf |
| GB2176443B (en) * | 1985-06-10 | 1990-11-14 | Canon Kk | Liquid jet recording head and recording system incorporating the same |
| US4753856A (en) * | 1987-01-02 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from silicate esters and metal oxides |
| US4775203A (en) * | 1987-02-13 | 1988-10-04 | General Electric Company | Optical scattering free metal oxide films and methods of making the same |
| JPH01119675A (ja) * | 1987-07-28 | 1989-05-11 | Morton Thiokol Inc | 超軽量高温作用構造物 |
| US5135809A (en) * | 1987-11-13 | 1992-08-04 | Dow Corning Corporation | Method for densification of amorphous ceramic material |
| FR2643071B1 (fr) * | 1989-02-16 | 1993-05-07 | Unirec | Procede de depot en phase vapeur a basse temperature d'un revetement ceramique du type nitrure ou carbonitrure metallique |
| JPH0560528A (ja) * | 1991-09-03 | 1993-03-09 | Hitachi Ltd | 立体情報入力装置 |
| US5422534A (en) * | 1992-11-18 | 1995-06-06 | General Electric Company | Tantala-silica interference filters and lamps using same |
| US5740941A (en) * | 1993-08-16 | 1998-04-21 | Lemelson; Jerome | Sheet material with coating |
| US5935705A (en) * | 1997-10-15 | 1999-08-10 | National Science Council Of Republic Of China | Crystalline Six Cy Nz with a direct optical band gap of 3.8 eV |
| US7510742B2 (en) * | 2005-11-18 | 2009-03-31 | United Technologies Corporation | Multilayered boron nitride/silicon nitride fiber coatings |
| KR102181727B1 (ko) * | 2019-04-17 | 2020-11-24 | 주식회사 티씨케이 | 탄화규소-질화규소 복합소재의 제조방법 및 이에 따른 탄화규소-질화규소 복합소재 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1258850B (de) * | 1965-05-10 | 1968-01-18 | Lonza Werke Elektrochemische F | Verfahren zur Herstellung von reinem Siliciumcarbid |
| US4145224A (en) * | 1974-11-22 | 1979-03-20 | Gte Sylvania Incorporated | Method for enhancing the crystallization rate of high purity amorphous Si3 N4 powder, powders produced thereby and products therefrom |
| US4036653A (en) * | 1975-05-28 | 1977-07-19 | E. I. Du Pont De Nemours And Company | Amorphous silicon nitride composition containing carbon, and vapor phase process |
| DE2557079C2 (de) * | 1975-12-18 | 1984-05-24 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum Herstellen einer Maskierungsschicht |
| JPS6047202B2 (ja) * | 1976-01-13 | 1985-10-21 | 東北大学金属材料研究所長 | 超硬高純度の配向多結晶質窒化珪素 |
| US4158717A (en) * | 1977-02-14 | 1979-06-19 | Varian Associates, Inc. | Silicon nitride film and method of deposition |
| US4178415A (en) * | 1978-03-22 | 1979-12-11 | Energy Conversion Devices, Inc. | Modified amorphous semiconductors and method of making the same |
| US4187344A (en) * | 1978-09-27 | 1980-02-05 | Norton Company | Protective silicon nitride or silicon oxynitride coating for porous refractories |
| US4225355A (en) * | 1979-02-16 | 1980-09-30 | United Technologies Corporation | Amorphous boron-carbon alloy in bulk form and methods of making the same |
| JPS5617988A (en) * | 1979-07-24 | 1981-02-20 | Toshio Hirai | Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture |
-
1979
- 1979-07-24 JP JP9394279A patent/JPS5617988A/ja active Granted
-
1980
- 1980-07-18 US US06/170,168 patent/US4393097A/en not_active Expired - Lifetime
-
1984
- 1984-08-21 US US06/642,700 patent/US4585704A/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01116063U (US20030204162A1-20031030-M00001.png) * | 1988-01-29 | 1989-08-04 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4393097A (en) | 1983-07-12 |
| US4585704A (en) | 1986-04-29 |
| JPS5617988A (en) | 1981-02-20 |
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