KR910000293B1 - SiO 발생 속도 조절에 의한 탄화규소 피복 흑연의 제조 방법 - Google Patents
SiO 발생 속도 조절에 의한 탄화규소 피복 흑연의 제조 방법 Download PDFInfo
- Publication number
- KR910000293B1 KR910000293B1 KR1019880009033A KR880009033A KR910000293B1 KR 910000293 B1 KR910000293 B1 KR 910000293B1 KR 1019880009033 A KR1019880009033 A KR 1019880009033A KR 880009033 A KR880009033 A KR 880009033A KR 910000293 B1 KR910000293 B1 KR 910000293B1
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- graphite
- silicon carbide
- reaction
- powder
- Prior art date
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 76
- 239000010439 graphite Substances 0.000 title claims description 64
- 229910002804 graphite Inorganic materials 0.000 title claims description 64
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 60
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 45
- 239000011812 mixed powder Substances 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 230000006698 induction Effects 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 86
- 238000006243 chemical reaction Methods 0.000 description 44
- 239000000463 material Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 20
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 17
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 239000000843 powder Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012229 microporous material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- -1 trimethyl silane Chemical class 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 229940094989 trimethylsilane Drugs 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims (4)
- 탄화규소와 이산화규소의 혼합 분말에 흑연을 묻고 비산화성 분위기에서 1800-2100℃의 고온으로 반응시키는 것이 특징인 탄화규소 피복 흑연의 제조 방법.
- 질화규소와 이산화규소의 혼합 분말에 흑연을 묻고 비산화성 분위기에서 1800-2100℃의 고온으로 반응시키는 것이 특징인 탄화규소 피복 흑연의 제조 방법.
- 흑연을 유도로의 중심에 위치시키고, 그 주위에 탄화규소와 이산화규소 또는 질화규소와 이산화규소의 혼합 분말을 채우고 비산화성 분위기에서 1800-2100℃의 고온으로 반응시키는 것이 특징인 탄화규소 피복 흑연의 제조 방법.
- 단열 펠트로 감싼 흑연을 유도로의 중심에 위치시키고 그 주위에 탄화규소와 이산화규소 또는 질화규소와 이산화규소의 혼합 분말을 채우고 비산화성 분위기에서 1800-2100℃의 고온으로 반응시키는 것이 특징인 탄화규소 피복 흑연의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019880009033A KR910000293B1 (ko) | 1988-07-20 | 1988-07-20 | SiO 발생 속도 조절에 의한 탄화규소 피복 흑연의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019880009033A KR910000293B1 (ko) | 1988-07-20 | 1988-07-20 | SiO 발생 속도 조절에 의한 탄화규소 피복 흑연의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900001593A KR900001593A (ko) | 1990-02-27 |
KR910000293B1 true KR910000293B1 (ko) | 1991-01-24 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019880009033A KR910000293B1 (ko) | 1988-07-20 | 1988-07-20 | SiO 발생 속도 조절에 의한 탄화규소 피복 흑연의 제조 방법 |
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KR (1) | KR910000293B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009107884A1 (en) * | 2008-02-28 | 2009-09-03 | Changwon National University Industry Academy Cooperation Corps | Synthetic method for anti-oxidation ceramic coatings on graphite substrates |
-
1988
- 1988-07-20 KR KR1019880009033A patent/KR910000293B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009107884A1 (en) * | 2008-02-28 | 2009-09-03 | Changwon National University Industry Academy Cooperation Corps | Synthetic method for anti-oxidation ceramic coatings on graphite substrates |
KR101224816B1 (ko) * | 2008-02-28 | 2013-01-21 | 창원대학교 산학협력단 | 그라파이트 기질상 -내산화성 세라믹 코팅의 형성방법 |
Also Published As
Publication number | Publication date |
---|---|
KR900001593A (ko) | 1990-02-27 |
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