JPS62216999A - 化合物半導体単結晶およびその製造方法 - Google Patents

化合物半導体単結晶およびその製造方法

Info

Publication number
JPS62216999A
JPS62216999A JP5658086A JP5658086A JPS62216999A JP S62216999 A JPS62216999 A JP S62216999A JP 5658086 A JP5658086 A JP 5658086A JP 5658086 A JP5658086 A JP 5658086A JP S62216999 A JPS62216999 A JP S62216999A
Authority
JP
Japan
Prior art keywords
single crystal
resistivity
compound semiconductor
specific resistivity
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5658086A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0513119B2 (enExample
Inventor
Masateru Takaya
高屋　征輝
Toru Takahashi
徹 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP5658086A priority Critical patent/JPS62216999A/ja
Publication of JPS62216999A publication Critical patent/JPS62216999A/ja
Publication of JPH0513119B2 publication Critical patent/JPH0513119B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP5658086A 1986-03-14 1986-03-14 化合物半導体単結晶およびその製造方法 Granted JPS62216999A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5658086A JPS62216999A (ja) 1986-03-14 1986-03-14 化合物半導体単結晶およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5658086A JPS62216999A (ja) 1986-03-14 1986-03-14 化合物半導体単結晶およびその製造方法

Publications (2)

Publication Number Publication Date
JPS62216999A true JPS62216999A (ja) 1987-09-24
JPH0513119B2 JPH0513119B2 (enExample) 1993-02-19

Family

ID=13031100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5658086A Granted JPS62216999A (ja) 1986-03-14 1986-03-14 化合物半導体単結晶およびその製造方法

Country Status (1)

Country Link
JP (1) JPS62216999A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6445126A (en) * 1987-08-13 1989-02-17 Furukawa Electric Co Ltd Manufacture of gaas compound semiconductor substrate
JPS6472999A (en) * 1987-09-14 1989-03-17 Nippon Mining Co Heat treatment of compound semiconductor single crystal
JPH01102932A (ja) * 1987-10-16 1989-04-20 Showa Denko Kk 半絶縁体ＧａＡｓ基板の製造方法
JPH01257200A (ja) * 1988-04-08 1989-10-13 Furukawa Electric Co Ltd:The ＧａＡｓ化合物半導体基板の製造方法
US5209811A (en) * 1988-03-25 1993-05-11 Shin-Etsu Handotai Company Limited Of Japan Method for heat-treating gallium arsenide monocrystals
JP2545477B2 (ja) * 1988-02-24 1996-10-16 株式会社ジャパンエナジー 化合物半導体単結晶およびその製造方法並びにそれを用いた半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60210591A (ja) * 1984-04-05 1985-10-23 Hitachi Cable Ltd 半絶縁性ＧａＡｓ単結晶の製造方法
JPS6144800A (ja) * 1984-08-09 1986-03-04 Sumitomo Electric Ind Ltd 結晶の品質改善方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60210591A (ja) * 1984-04-05 1985-10-23 Hitachi Cable Ltd 半絶縁性ＧａＡｓ単結晶の製造方法
JPS6144800A (ja) * 1984-08-09 1986-03-04 Sumitomo Electric Ind Ltd 結晶の品質改善方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6445126A (en) * 1987-08-13 1989-02-17 Furukawa Electric Co Ltd Manufacture of gaas compound semiconductor substrate
JPS6472999A (en) * 1987-09-14 1989-03-17 Nippon Mining Co Heat treatment of compound semiconductor single crystal
JPH01102932A (ja) * 1987-10-16 1989-04-20 Showa Denko Kk 半絶縁体ＧａＡｓ基板の製造方法
JP2545477B2 (ja) * 1988-02-24 1996-10-16 株式会社ジャパンエナジー 化合物半導体単結晶およびその製造方法並びにそれを用いた半導体装置
US5209811A (en) * 1988-03-25 1993-05-11 Shin-Etsu Handotai Company Limited Of Japan Method for heat-treating gallium arsenide monocrystals
JPH01257200A (ja) * 1988-04-08 1989-10-13 Furukawa Electric Co Ltd:The ＧａＡｓ化合物半導体基板の製造方法

Also Published As

Publication number Publication date
JPH0513119B2 (enExample) 1993-02-19

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