JPS62212646A - 感光性組成物 - Google Patents
感光性組成物Info
- Publication number
- JPS62212646A JPS62212646A JP5753886A JP5753886A JPS62212646A JP S62212646 A JPS62212646 A JP S62212646A JP 5753886 A JP5753886 A JP 5753886A JP 5753886 A JP5753886 A JP 5753886A JP S62212646 A JPS62212646 A JP S62212646A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive composition
- solvent
- methylpentene
- sulfone
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 23
- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 229920003986 novolac Polymers 0.000 claims abstract description 11
- QJZCTUDJOKLEPI-UHFFFAOYSA-N 2-methylphenol;2-phenylphenol Chemical group CC1=CC=CC=C1O.OC1=CC=CC=C1C1=CC=CC=C1 QJZCTUDJOKLEPI-UHFFFAOYSA-N 0.000 claims abstract description 5
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 claims description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 4
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 claims description 3
- 229930003836 cresol Natural products 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- QLTCALXWSNPPGR-UHFFFAOYSA-N phenol;2-phenylphenol Chemical group OC1=CC=CC=C1.OC1=CC=CC=C1C1=CC=CC=C1 QLTCALXWSNPPGR-UHFFFAOYSA-N 0.000 abstract description 3
- KKDJFMHJNUBAQQ-UHFFFAOYSA-N 2-butylphenol;2-methylphenol Chemical group CC1=CC=CC=C1O.CCCCC1=CC=CC=C1O KKDJFMHJNUBAQQ-UHFFFAOYSA-N 0.000 abstract 1
- KAHLLPRMTWMMLH-UHFFFAOYSA-N 2-butylphenol;phenol Chemical group OC1=CC=CC=C1.CCCCC1=CC=CC=C1O KAHLLPRMTWMMLH-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- ZHQGRLLUKPNZPP-UHFFFAOYSA-N 2-tert-butylphenol;2-methylphenol Chemical compound CC1=CC=CC=C1O.CC(C)(C)C1=CC=CC=C1O ZHQGRLLUKPNZPP-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005865 ionizing radiation Effects 0.000 description 3
- 229940117955 isoamyl acetate Drugs 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- JMMZCWZIJXAGKW-UHFFFAOYSA-N 2-methylpent-2-ene Chemical compound CCC=C(C)C JMMZCWZIJXAGKW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- AUDARWUVENLYLT-UHFFFAOYSA-N 2-tert-butylphenol;phenol Chemical compound OC1=CC=CC=C1.CC(C)(C)C1=CC=CC=C1O AUDARWUVENLYLT-UHFFFAOYSA-N 0.000 description 1
- 206010011732 Cyst Diseases 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5753886A JPS62212646A (ja) | 1986-03-14 | 1986-03-14 | 感光性組成物 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5753886A JPS62212646A (ja) | 1986-03-14 | 1986-03-14 | 感光性組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62212646A true JPS62212646A (ja) | 1987-09-18 |
| JPH0547098B2 JPH0547098B2 (en, 2012) | 1993-07-15 |
Family
ID=13058536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5753886A Granted JPS62212646A (ja) | 1986-03-14 | 1986-03-14 | 感光性組成物 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62212646A (en, 2012) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63217346A (ja) * | 1987-03-05 | 1988-09-09 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
| JPH03152544A (ja) * | 1989-10-23 | 1991-06-28 | Internatl Business Mach Corp <Ibm> | 高感度の乾式現像可能な深ｕｖ光用ホトレジスト |
| JPH03206458A (ja) * | 1989-03-14 | 1991-09-09 | Internatl Business Mach Corp <Ibm> | 化学的に増補されたフオトレジスト |
| JPH05134416A (ja) * | 1991-03-04 | 1993-05-28 | Internatl Business Mach Corp <Ibm> | ポジテイブレジスト合成材料、使用方法及び使用装置 |
| JPH05249680A (ja) * | 1991-09-17 | 1993-09-28 | Internatl Business Mach Corp <Ibm> | 近紫外−可視域イメージング用ポジチブフォトレジスト系 |
-
1986
- 1986-03-14 JP JP5753886A patent/JPS62212646A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63217346A (ja) * | 1987-03-05 | 1988-09-09 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
| JPH03206458A (ja) * | 1989-03-14 | 1991-09-09 | Internatl Business Mach Corp <Ibm> | 化学的に増補されたフオトレジスト |
| JPH03152544A (ja) * | 1989-10-23 | 1991-06-28 | Internatl Business Mach Corp <Ibm> | 高感度の乾式現像可能な深ｕｖ光用ホトレジスト |
| JPH05134416A (ja) * | 1991-03-04 | 1993-05-28 | Internatl Business Mach Corp <Ibm> | ポジテイブレジスト合成材料、使用方法及び使用装置 |
| JPH05249680A (ja) * | 1991-09-17 | 1993-09-28 | Internatl Business Mach Corp <Ibm> | 近紫外−可視域イメージング用ポジチブフォトレジスト系 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0547098B2 (en, 2012) | 1993-07-15 |
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