JPH0533790B2 - - Google Patents
Info
- Publication number
- JPH0533790B2 JPH0533790B2 JP12658986A JP12658986A JPH0533790B2 JP H0533790 B2 JPH0533790 B2 JP H0533790B2 JP 12658986 A JP12658986 A JP 12658986A JP 12658986 A JP12658986 A JP 12658986A JP H0533790 B2 JPH0533790 B2 JP H0533790B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- photosensitizer
- cumyl
- vacuum
- oxo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003504 photosensitizing agent Substances 0.000 claims description 19
- 230000005865 ionizing radiation Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 150000003459 sulfonic acid esters Chemical class 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 18
- 239000010408 film Substances 0.000 description 17
- 239000000243 solution Substances 0.000 description 15
- 238000010894 electron beam technology Methods 0.000 description 13
- 230000018109 developmental process Effects 0.000 description 12
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 11
- 238000010884 ion-beam technique Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229940100630 metacresol Drugs 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- NZSCUDBGUBVDLO-UHFFFAOYSA-N 3h-indene-1-carboxylic acid Chemical class C1=CC=C2C(C(=O)O)=CCC2=C1 NZSCUDBGUBVDLO-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001733 carboxylic acid esters Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical class C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical group OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- -1 phenyl-substituted sulfonic acid Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12658986A JPS62280844A (ja) | 1986-05-30 | 1986-05-30 | 感光剤 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12658986A JPS62280844A (ja) | 1986-05-30 | 1986-05-30 | 感光剤 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62280844A JPS62280844A (ja) | 1987-12-05 |
JPH0533790B2 true JPH0533790B2 (en, 2012) | 1993-05-20 |
Family
ID=14938918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12658986A Granted JPS62280844A (ja) | 1986-05-30 | 1986-05-30 | 感光剤 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62280844A (en, 2012) |
-
1986
- 1986-05-30 JP JP12658986A patent/JPS62280844A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62280844A (ja) | 1987-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6319655B1 (en) | Modification of 193 nm sensitive photoresist materials by electron beam exposure | |
US5322765A (en) | Dry developable photoresist compositions and method for use thereof | |
JP2501292B2 (ja) | 酸感応ポリマおよびホトレジスト構造の作成方法 | |
JPH0456979B2 (en, 2012) | ||
JPS6155246B2 (en, 2012) | ||
US4400461A (en) | Process of making semiconductor devices using photosensitive bodies | |
US5066566A (en) | Resist materials | |
CA1263822A (en) | Method for producing a positive photoresist | |
US4551416A (en) | Process for preparing semiconductors using photosensitive bodies | |
JPH0210350A (ja) | ポジ型フォトレジスト | |
US4666820A (en) | Photosensitive element comprising a substrate and an alkaline soluble mixture | |
US4822722A (en) | Process of using high contrast photoresist developer with enhanced sensitivity to form positive resist image | |
JPH05249681A (ja) | 酸分解性化合物及びそれを含有するポジ型感放射線性レジスト組成物 | |
JPS62212646A (ja) | 感光性組成物 | |
JPH0533790B2 (en, 2012) | ||
JP2676981B2 (ja) | 感光性樹脂組成物 | |
JPH0533791B2 (en, 2012) | ||
JPS62280843A (ja) | 感光剤 | |
JPS62212648A (ja) | 感光性組成物 | |
JPH04347857A (ja) | パターン形成方法 | |
JPH0643630A (ja) | 酸分解性化合物及びそれを含有するポジ型感放射線性レジスト組成物 | |
JPH0474434B2 (en, 2012) | ||
JPS62215939A (ja) | パタ−ン形成方法 | |
US5229256A (en) | Process for generating positive-tone photoresist image | |
JPS63121043A (ja) | シリコ−ンレジスト材料 |