JPS6217862B2 - - Google Patents
Info
- Publication number
- JPS6217862B2 JPS6217862B2 JP55137912A JP13791280A JPS6217862B2 JP S6217862 B2 JPS6217862 B2 JP S6217862B2 JP 55137912 A JP55137912 A JP 55137912A JP 13791280 A JP13791280 A JP 13791280A JP S6217862 B2 JPS6217862 B2 JP S6217862B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- field
- insulating film
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55137912A JPS5762542A (en) | 1980-10-02 | 1980-10-02 | Manufacture of semiconductor device |
US06/307,877 US4560421A (en) | 1980-10-02 | 1981-10-02 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55137912A JPS5762542A (en) | 1980-10-02 | 1980-10-02 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5762542A JPS5762542A (en) | 1982-04-15 |
JPS6217862B2 true JPS6217862B2 (enrdf_load_html_response) | 1987-04-20 |
Family
ID=15209580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55137912A Granted JPS5762542A (en) | 1980-10-02 | 1980-10-02 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5762542A (enrdf_load_html_response) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9269765B2 (en) | 2013-10-21 | 2016-02-23 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device having gate wire disposed on roughened field insulating film |
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1980
- 1980-10-02 JP JP55137912A patent/JPS5762542A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5762542A (en) | 1982-04-15 |