JPS6217860B2 - - Google Patents
Info
- Publication number
- JPS6217860B2 JPS6217860B2 JP55083203A JP8320380A JPS6217860B2 JP S6217860 B2 JPS6217860 B2 JP S6217860B2 JP 55083203 A JP55083203 A JP 55083203A JP 8320380 A JP8320380 A JP 8320380A JP S6217860 B2 JPS6217860 B2 JP S6217860B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor substrate
- conductivity type
- film
- oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8320380A JPS577943A (en) | 1980-06-19 | 1980-06-19 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8320380A JPS577943A (en) | 1980-06-19 | 1980-06-19 | Manufacture of semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS577943A JPS577943A (en) | 1982-01-16 |
| JPS6217860B2 true JPS6217860B2 (enrdf_load_stackoverflow) | 1987-04-20 |
Family
ID=13795762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8320380A Granted JPS577943A (en) | 1980-06-19 | 1980-06-19 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577943A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6294760U (enrdf_load_stackoverflow) * | 1985-12-05 | 1987-06-17 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0616510B2 (ja) * | 1986-08-06 | 1994-03-02 | 日本電気株式会社 | 半導体装置の製造方法 |
-
1980
- 1980-06-19 JP JP8320380A patent/JPS577943A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6294760U (enrdf_load_stackoverflow) * | 1985-12-05 | 1987-06-17 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS577943A (en) | 1982-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3400846B2 (ja) | トレンチ構造を有する半導体装置およびその製造方法 | |
| US6489652B1 (en) | Trench DMOS device having a high breakdown resistance | |
| JPH0366133A (ja) | ベース接点が垂直な浅いトレンチ型バイポーラ・トランジスタを有するＢｉＣＭＯＳ集積回路 | |
| JPH0548936B2 (enrdf_load_stackoverflow) | ||
| JPH06318634A (ja) | 半導体装置の素子分離方法 | |
| JPH0669431A (ja) | Ｓｏｉ基板上にバイポーラトランジスタとｃｍｏｓトランジスタを製造する方法及びそれらのトランジスタ | |
| JPH0557741B2 (enrdf_load_stackoverflow) | ||
| JPS59217364A (ja) | 半導体装置の製法 | |
| JPH10125694A (ja) | 半導体装置及びその製造方法 | |
| JPS6217860B2 (enrdf_load_stackoverflow) | ||
| JPS60106142A (ja) | 半導体素子の製造方法 | |
| JP2625873B2 (ja) | バイポーラトランジスタの製造方法 | |
| JP2883242B2 (ja) | 半導体装置の製造方法 | |
| GB2129214A (en) | Bipolar transistors | |
| JPS5879735A (ja) | 半導体集積回路 | |
| JPH04113627A (ja) | バイポーラトランジスタの製造方法 | |
| JPH0442936A (ja) | 半導体装置の製造方法 | |
| JPS5969946A (ja) | 半導体集積回路及びその製造方法 | |
| JPH01181464A (ja) | バイポーラトランジスタの製造方法 | |
| JPH02220458A (ja) | 半導体装置の製造方法 | |
| JPS59161067A (ja) | バイポ−ラ型半導体装置の製造方法 | |
| JPS60165757A (ja) | 半導体装置の製造方法 | |
| JPH10335343A (ja) | 半導体装置の製造方法 | |
| JPH05243246A (ja) | バイポーラトランジスタの製造方法 | |
| JPS6259465B2 (enrdf_load_stackoverflow) |