JPS62174976A - 電界効果トランジスタ - Google Patents
電界効果トランジスタInfo
- Publication number
- JPS62174976A JPS62174976A JP61017571A JP1757186A JPS62174976A JP S62174976 A JPS62174976 A JP S62174976A JP 61017571 A JP61017571 A JP 61017571A JP 1757186 A JP1757186 A JP 1757186A JP S62174976 A JPS62174976 A JP S62174976A
- Authority
- JP
- Japan
- Prior art keywords
- indium
- layer
- crystal semiconductor
- mixed crystal
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims description 14
- 239000013078 crystal Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 18
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 12
- 229910052785 arsenic Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- URRHWTYOQNLUKY-UHFFFAOYSA-N [AlH3].[P] Chemical compound [AlH3].[P] URRHWTYOQNLUKY-UHFFFAOYSA-N 0.000 claims 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 1
- -1 aluminum-indium-arsenic Chemical compound 0.000 description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61017571A JPS62174976A (ja) | 1986-01-28 | 1986-01-28 | 電界効果トランジスタ |
| US06/939,716 US4764796A (en) | 1985-12-19 | 1986-12-09 | Heterojunction field effect transistor with two-dimensional electron layer |
| DE8686117164T DE3688318T2 (de) | 1985-12-19 | 1986-12-09 | Feldeffekttransistor. |
| EP86117164A EP0228624B1 (en) | 1985-12-19 | 1986-12-09 | field effect transistor |
| CA000525579A CA1247755A (en) | 1985-12-19 | 1986-12-17 | Field effect transistor |
| KR1019860010809A KR900000073B1 (ko) | 1985-12-19 | 1986-12-17 | 전계효과트랜지스터 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61017571A JPS62174976A (ja) | 1986-01-28 | 1986-01-28 | 電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62174976A true JPS62174976A (ja) | 1987-07-31 |
| JPH0260218B2 JPH0260218B2 (enExample) | 1990-12-14 |
Family
ID=11947599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61017571A Granted JPS62174976A (ja) | 1985-12-19 | 1986-01-28 | 電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62174976A (enExample) |
-
1986
- 1986-01-28 JP JP61017571A patent/JPS62174976A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0260218B2 (enExample) | 1990-12-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |