JPS62174934A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPS62174934A
JPS62174934A JP61018469A JP1846986A JPS62174934A JP S62174934 A JPS62174934 A JP S62174934A JP 61018469 A JP61018469 A JP 61018469A JP 1846986 A JP1846986 A JP 1846986A JP S62174934 A JPS62174934 A JP S62174934A
Authority
JP
Japan
Prior art keywords
bonding pad
semiconductor device
small regions
width
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61018469A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0482054B2 (enrdf_load_stackoverflow
Inventor
Junichi Arima
純一 有馬
Reiji Tamaki
礼二 玉城
Junichi Moriya
純一 守谷
Mitsuyoshi Nakamura
充善 中村
Eisuke Tanaka
英祐 田中
Shigeru Harada
繁 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61018469A priority Critical patent/JPS62174934A/ja
Publication of JPS62174934A publication Critical patent/JPS62174934A/ja
Publication of JPH0482054B2 publication Critical patent/JPH0482054B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
JP61018469A 1986-01-28 1986-01-28 半導体装置およびその製造方法 Granted JPS62174934A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61018469A JPS62174934A (ja) 1986-01-28 1986-01-28 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61018469A JPS62174934A (ja) 1986-01-28 1986-01-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS62174934A true JPS62174934A (ja) 1987-07-31
JPH0482054B2 JPH0482054B2 (enrdf_load_stackoverflow) 1992-12-25

Family

ID=11972496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61018469A Granted JPS62174934A (ja) 1986-01-28 1986-01-28 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS62174934A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309025A (en) * 1992-07-27 1994-05-03 Sgs-Thomson Microelectronics, Inc. Semiconductor bond pad structure and method
US6087756A (en) * 1997-08-11 2000-07-11 Murata Manufacturing Co., Ltd. Surface acoustic wave
US6414415B1 (en) 1999-02-18 2002-07-02 Murata Manufacturing Co., Ltd. Surface acoustic wave device and method for manufacturing the same
US8896397B2 (en) * 2003-04-16 2014-11-25 Intellectual Ventures Fund 77 Llc Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device
USRE47410E1 (en) * 2003-04-16 2019-05-28 Intellectual Ventures Holding 81 Llc Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558044A (en) * 1978-06-30 1980-01-21 Sumitomo Electric Ind Ltd Semiconductor element
JPS55135459U (enrdf_load_stackoverflow) * 1979-03-19 1980-09-26
JPS5929430A (ja) * 1982-08-11 1984-02-16 Matsushita Electronics Corp 半導体装置
JPS61220364A (ja) * 1985-03-26 1986-09-30 Fujitsu Ltd くし形ボンデイングパツド

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558044A (en) * 1978-06-30 1980-01-21 Sumitomo Electric Ind Ltd Semiconductor element
JPS55135459U (enrdf_load_stackoverflow) * 1979-03-19 1980-09-26
JPS5929430A (ja) * 1982-08-11 1984-02-16 Matsushita Electronics Corp 半導体装置
JPS61220364A (ja) * 1985-03-26 1986-09-30 Fujitsu Ltd くし形ボンデイングパツド

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309025A (en) * 1992-07-27 1994-05-03 Sgs-Thomson Microelectronics, Inc. Semiconductor bond pad structure and method
US6087756A (en) * 1997-08-11 2000-07-11 Murata Manufacturing Co., Ltd. Surface acoustic wave
US6414415B1 (en) 1999-02-18 2002-07-02 Murata Manufacturing Co., Ltd. Surface acoustic wave device and method for manufacturing the same
US8896397B2 (en) * 2003-04-16 2014-11-25 Intellectual Ventures Fund 77 Llc Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device
USRE47410E1 (en) * 2003-04-16 2019-05-28 Intellectual Ventures Holding 81 Llc Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device

Also Published As

Publication number Publication date
JPH0482054B2 (enrdf_load_stackoverflow) 1992-12-25

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