JPS6217385B2 - - Google Patents

Info

Publication number
JPS6217385B2
JPS6217385B2 JP54153603A JP15360379A JPS6217385B2 JP S6217385 B2 JPS6217385 B2 JP S6217385B2 JP 54153603 A JP54153603 A JP 54153603A JP 15360379 A JP15360379 A JP 15360379A JP S6217385 B2 JPS6217385 B2 JP S6217385B2
Authority
JP
Japan
Prior art keywords
conductivity type
region
layer
oxide film
opposite conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54153603A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5676563A (en
Inventor
Koichi Kanzaki
Minoru Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP15360379A priority Critical patent/JPS5676563A/ja
Priority to DE8080304302T priority patent/DE3063191D1/de
Priority to EP80304302A priority patent/EP0030147B1/en
Priority to US06/210,759 priority patent/US4404737A/en
Publication of JPS5676563A publication Critical patent/JPS5676563A/ja
Publication of JPS6217385B2 publication Critical patent/JPS6217385B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP15360379A 1979-11-29 1979-11-29 Manufacture of semiconductor integrated circuit Granted JPS5676563A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15360379A JPS5676563A (en) 1979-11-29 1979-11-29 Manufacture of semiconductor integrated circuit
DE8080304302T DE3063191D1 (en) 1979-11-29 1980-11-28 Method for manufacturing a semiconductor integrated circuit
EP80304302A EP0030147B1 (en) 1979-11-29 1980-11-28 Method for manufacturing a semiconductor integrated circuit
US06/210,759 US4404737A (en) 1979-11-29 1980-11-28 Method for manufacturing a semiconductor integrated circuit utilizing polycrystalline silicon deposition, oxidation and etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15360379A JPS5676563A (en) 1979-11-29 1979-11-29 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5676563A JPS5676563A (en) 1981-06-24
JPS6217385B2 true JPS6217385B2 (enrdf_load_stackoverflow) 1987-04-17

Family

ID=15566087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15360379A Granted JPS5676563A (en) 1979-11-29 1979-11-29 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5676563A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586163A (ja) * 1981-07-03 1983-01-13 Toshiba Corp 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242670B2 (enrdf_load_stackoverflow) * 1973-12-12 1977-10-26
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
JPS53142196A (en) * 1977-05-18 1978-12-11 Hitachi Ltd Bipolar type semiconductor device
JPS5852352B2 (ja) * 1977-12-14 1983-11-22 日本電信電話株式会社 電界効果型トランジスタの製法

Also Published As

Publication number Publication date
JPS5676563A (en) 1981-06-24

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