JPS6217386B2 - - Google Patents

Info

Publication number
JPS6217386B2
JPS6217386B2 JP54165494A JP16549479A JPS6217386B2 JP S6217386 B2 JPS6217386 B2 JP S6217386B2 JP 54165494 A JP54165494 A JP 54165494A JP 16549479 A JP16549479 A JP 16549479A JP S6217386 B2 JPS6217386 B2 JP S6217386B2
Authority
JP
Japan
Prior art keywords
conductivity type
region
oxide film
layer
opposite conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54165494A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5688352A (en
Inventor
Minoru Taguchi
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP16549479A priority Critical patent/JPS5688352A/ja
Priority to EP80304302A priority patent/EP0030147B1/en
Priority to DE8080304302T priority patent/DE3063191D1/de
Priority to US06/210,759 priority patent/US4404737A/en
Publication of JPS5688352A publication Critical patent/JPS5688352A/ja
Publication of JPS6217386B2 publication Critical patent/JPS6217386B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP16549479A 1979-11-29 1979-12-21 Manufacture of semiconductor integrated circuit Granted JPS5688352A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP16549479A JPS5688352A (en) 1979-12-21 1979-12-21 Manufacture of semiconductor integrated circuit
EP80304302A EP0030147B1 (en) 1979-11-29 1980-11-28 Method for manufacturing a semiconductor integrated circuit
DE8080304302T DE3063191D1 (en) 1979-11-29 1980-11-28 Method for manufacturing a semiconductor integrated circuit
US06/210,759 US4404737A (en) 1979-11-29 1980-11-28 Method for manufacturing a semiconductor integrated circuit utilizing polycrystalline silicon deposition, oxidation and etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16549479A JPS5688352A (en) 1979-12-21 1979-12-21 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5688352A JPS5688352A (en) 1981-07-17
JPS6217386B2 true JPS6217386B2 (enrdf_load_stackoverflow) 1987-04-17

Family

ID=15813457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16549479A Granted JPS5688352A (en) 1979-11-29 1979-12-21 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5688352A (enrdf_load_stackoverflow)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
JPS53142196A (en) * 1977-05-18 1978-12-11 Hitachi Ltd Bipolar type semiconductor device
JPS5852352B2 (ja) * 1977-12-14 1983-11-22 日本電信電話株式会社 電界効果型トランジスタの製法

Also Published As

Publication number Publication date
JPS5688352A (en) 1981-07-17

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