JPS5688352A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS5688352A JPS5688352A JP16549479A JP16549479A JPS5688352A JP S5688352 A JPS5688352 A JP S5688352A JP 16549479 A JP16549479 A JP 16549479A JP 16549479 A JP16549479 A JP 16549479A JP S5688352 A JPS5688352 A JP S5688352A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- base
- sio2 film
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 239000010408 film Substances 0.000 abstract 4
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16549479A JPS5688352A (en) | 1979-12-21 | 1979-12-21 | Manufacture of semiconductor integrated circuit |
US06/210,759 US4404737A (en) | 1979-11-29 | 1980-11-28 | Method for manufacturing a semiconductor integrated circuit utilizing polycrystalline silicon deposition, oxidation and etching |
DE8080304302T DE3063191D1 (en) | 1979-11-29 | 1980-11-28 | Method for manufacturing a semiconductor integrated circuit |
EP80304302A EP0030147B1 (en) | 1979-11-29 | 1980-11-28 | Method for manufacturing a semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16549479A JPS5688352A (en) | 1979-12-21 | 1979-12-21 | Manufacture of semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5688352A true JPS5688352A (en) | 1981-07-17 |
JPS6217386B2 JPS6217386B2 (ja) | 1987-04-17 |
Family
ID=15813457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16549479A Granted JPS5688352A (en) | 1979-11-29 | 1979-12-21 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5688352A (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52117579A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Semiconductor device |
JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
JPS53142196A (en) * | 1977-05-18 | 1978-12-11 | Hitachi Ltd | Bipolar type semiconductor device |
JPS5482175A (en) * | 1977-12-14 | 1979-06-30 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor and its manufacture |
-
1979
- 1979-12-21 JP JP16549479A patent/JPS5688352A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52117579A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Semiconductor device |
JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
JPS53142196A (en) * | 1977-05-18 | 1978-12-11 | Hitachi Ltd | Bipolar type semiconductor device |
JPS5482175A (en) * | 1977-12-14 | 1979-06-30 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS6217386B2 (ja) | 1987-04-17 |
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