JPS5676563A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS5676563A JPS5676563A JP15360379A JP15360379A JPS5676563A JP S5676563 A JPS5676563 A JP S5676563A JP 15360379 A JP15360379 A JP 15360379A JP 15360379 A JP15360379 A JP 15360379A JP S5676563 A JPS5676563 A JP S5676563A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- becoming
- base
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- -1 boron ions Chemical class 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15360379A JPS5676563A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor integrated circuit |
DE8080304302T DE3063191D1 (en) | 1979-11-29 | 1980-11-28 | Method for manufacturing a semiconductor integrated circuit |
EP80304302A EP0030147B1 (en) | 1979-11-29 | 1980-11-28 | Method for manufacturing a semiconductor integrated circuit |
US06/210,759 US4404737A (en) | 1979-11-29 | 1980-11-28 | Method for manufacturing a semiconductor integrated circuit utilizing polycrystalline silicon deposition, oxidation and etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15360379A JPS5676563A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5676563A true JPS5676563A (en) | 1981-06-24 |
JPS6217385B2 JPS6217385B2 (enrdf_load_stackoverflow) | 1987-04-17 |
Family
ID=15566087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15360379A Granted JPS5676563A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5676563A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS586163A (ja) * | 1981-07-03 | 1983-01-13 | Toshiba Corp | 半導体装置の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5091288A (enrdf_load_stackoverflow) * | 1973-12-12 | 1975-07-21 | ||
JPS52117579A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Semiconductor device |
JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
JPS53142196A (en) * | 1977-05-18 | 1978-12-11 | Hitachi Ltd | Bipolar type semiconductor device |
JPS5482175A (en) * | 1977-12-14 | 1979-06-30 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor and its manufacture |
-
1979
- 1979-11-29 JP JP15360379A patent/JPS5676563A/ja active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5091288A (enrdf_load_stackoverflow) * | 1973-12-12 | 1975-07-21 | ||
JPS52117579A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Semiconductor device |
JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
JPS53142196A (en) * | 1977-05-18 | 1978-12-11 | Hitachi Ltd | Bipolar type semiconductor device |
JPS5482175A (en) * | 1977-12-14 | 1979-06-30 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor and its manufacture |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS586163A (ja) * | 1981-07-03 | 1983-01-13 | Toshiba Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6217385B2 (enrdf_load_stackoverflow) | 1987-04-17 |
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