JPS6217191B2 - - Google Patents
Info
- Publication number
- JPS6217191B2 JPS6217191B2 JP7248277A JP7248277A JPS6217191B2 JP S6217191 B2 JPS6217191 B2 JP S6217191B2 JP 7248277 A JP7248277 A JP 7248277A JP 7248277 A JP7248277 A JP 7248277A JP S6217191 B2 JPS6217191 B2 JP S6217191B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- circuit
- gate
- output
- adjustment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005070 sampling Methods 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000001514 detection method Methods 0.000 description 62
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 description 24
- 239000000758 substrate Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 238000002955 isolation Methods 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 8
- 230000010355 oscillation Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 101100522114 Oryza sativa subsp. japonica PHT1-12 gene Proteins 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 101100522111 Oryza sativa subsp. japonica PHT1-11 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Measurement Of Current Or Voltage (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7248277A JPS5415782A (en) | 1977-06-17 | 1977-06-17 | Voltage detecting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7248277A JPS5415782A (en) | 1977-06-17 | 1977-06-17 | Voltage detecting circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5415782A JPS5415782A (en) | 1979-02-05 |
| JPS6217191B2 true JPS6217191B2 (enrdf_load_stackoverflow) | 1987-04-16 |
Family
ID=13490576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7248277A Granted JPS5415782A (en) | 1977-06-17 | 1977-06-17 | Voltage detecting circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5415782A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0668521B2 (ja) * | 1986-09-30 | 1994-08-31 | 株式会社東芝 | 電源電圧検出回路 |
| JPH0797118B2 (ja) * | 1986-04-30 | 1995-10-18 | セイコーエプソン株式会社 | 電圧検出回路 |
| JPH01104564U (enrdf_load_stackoverflow) * | 1987-12-29 | 1989-07-14 | ||
| JP3806011B2 (ja) * | 2001-10-05 | 2006-08-09 | セイコーインスツル株式会社 | 電圧検出回路 |
-
1977
- 1977-06-17 JP JP7248277A patent/JPS5415782A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5415782A (en) | 1979-02-05 |
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