JPS62166510A - 蒸発源の熱分解法 - Google Patents

蒸発源の熱分解法

Info

Publication number
JPS62166510A
JPS62166510A JP909586A JP909586A JPS62166510A JP S62166510 A JPS62166510 A JP S62166510A JP 909586 A JP909586 A JP 909586A JP 909586 A JP909586 A JP 909586A JP S62166510 A JPS62166510 A JP S62166510A
Authority
JP
Japan
Prior art keywords
evaporation source
raw material
thermal decomposition
temperature
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP909586A
Other languages
English (en)
Japanese (ja)
Other versions
JPH035053B2 (enrdf_load_stackoverflow
Inventor
Sumio Sakai
酒井　純朗
Shunichi Murakami
俊一 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP909586A priority Critical patent/JPS62166510A/ja
Publication of JPS62166510A publication Critical patent/JPS62166510A/ja
Publication of JPH035053B2 publication Critical patent/JPH035053B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP909586A 1986-01-20 1986-01-20 蒸発源の熱分解法 Granted JPS62166510A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP909586A JPS62166510A (ja) 1986-01-20 1986-01-20 蒸発源の熱分解法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP909586A JPS62166510A (ja) 1986-01-20 1986-01-20 蒸発源の熱分解法

Publications (2)

Publication Number Publication Date
JPS62166510A true JPS62166510A (ja) 1987-07-23
JPH035053B2 JPH035053B2 (enrdf_load_stackoverflow) 1991-01-24

Family

ID=11711054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP909586A Granted JPS62166510A (ja) 1986-01-20 1986-01-20 蒸発源の熱分解法

Country Status (1)

Country Link
JP (1) JPS62166510A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH035053B2 (enrdf_load_stackoverflow) 1991-01-24

Similar Documents

Publication Publication Date Title
US4960720A (en) Method of growing compound semiconductor thin film using multichamber smoothing process
Fuyuki et al. Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure
JPH0350834B2 (enrdf_load_stackoverflow)
JPS62191493A (ja) 半導体物質の気相エピタキシヤル成長法
JPS62166510A (ja) 蒸発源の熱分解法
JPH0647515B2 (ja) 化合物半導体エピタキシャル成長法
Hartmann Vapour phase epitaxy of II–VI compounds: A review
JPS6272113A (ja) 分子線結晶成長装置
GB2008084A (en) Improvements in or relating to the growth of semiconductor compounds
JP3101753B2 (ja) 気相成長方法
JPS61261294A (ja) 分子線エピタキシャル成長法
JP2839750B2 (ja) 分子線エピタキシャル成長方法
JPS6226568B2 (enrdf_load_stackoverflow)
JPH0482230A (ja) カルコパイライト型化合物半導体薄膜の成長方法
JPS61124122A (ja) 化合物半導体単結晶薄膜の成長方法
JPH01305889A (ja) 分子線セル
JPS61176111A (ja) 化合物半導体薄膜の製造方法
JPS61141119A (ja) 分子線結晶成長装置
JPS62271438A (ja) 結晶成長方法
JPS6369792A (ja) 半導体エピタキシヤル成長法
JPH01230495A (ja) 半導体結晶の成長方法
JPS627692A (ja) 半導体の選択成長法
HgCdTe BY THE DIRECT ALLOYΥ GROWTH (DAG) PROCESS
JPH0463840B2 (enrdf_load_stackoverflow)
JPH02141498A (ja) ＩｎＧａＰ結晶の成長方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term