JPH0463840B2 - - Google Patents
Info
- Publication number
- JPH0463840B2 JPH0463840B2 JP13538287A JP13538287A JPH0463840B2 JP H0463840 B2 JPH0463840 B2 JP H0463840B2 JP 13538287 A JP13538287 A JP 13538287A JP 13538287 A JP13538287 A JP 13538287A JP H0463840 B2 JPH0463840 B2 JP H0463840B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- sic
- substrate
- single crystal
- tic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 52
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 51
- 239000013078 crystal Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 8
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 37
- 239000010936 titanium Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000001294 propane Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010000 carbonizing Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001835 Lely method Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- -1 methaneethylene Natural products 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13538287A JPS63303896A (ja) | 1987-05-30 | 1987-05-30 | 炭化珪素単結晶膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13538287A JPS63303896A (ja) | 1987-05-30 | 1987-05-30 | 炭化珪素単結晶膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63303896A JPS63303896A (ja) | 1988-12-12 |
| JPH0463840B2 true JPH0463840B2 (enrdf_load_stackoverflow) | 1992-10-13 |
Family
ID=15150400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13538287A Granted JPS63303896A (ja) | 1987-05-30 | 1987-05-30 | 炭化珪素単結晶膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63303896A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5010035A (en) * | 1985-05-23 | 1991-04-23 | The Regents Of The University Of California | Wafer base for silicon carbide semiconductor device |
| CN107108218A (zh) | 2014-12-22 | 2017-08-29 | 信越化学工业株式会社 | 复合基板、纳米碳膜的制作方法和纳米碳膜 |
-
1987
- 1987-05-30 JP JP13538287A patent/JPS63303896A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63303896A (ja) | 1988-12-12 |
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