JPS62165318A - 分子線結晶成長装置 - Google Patents
分子線結晶成長装置Info
- Publication number
- JPS62165318A JPS62165318A JP626286A JP626286A JPS62165318A JP S62165318 A JPS62165318 A JP S62165318A JP 626286 A JP626286 A JP 626286A JP 626286 A JP626286 A JP 626286A JP S62165318 A JPS62165318 A JP S62165318A
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- raw material
- beam source
- source cell
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 24
- 239000002994 raw material Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 238000007599 discharging Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP626286A JPS62165318A (ja) | 1986-01-17 | 1986-01-17 | 分子線結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP626286A JPS62165318A (ja) | 1986-01-17 | 1986-01-17 | 分子線結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62165318A true JPS62165318A (ja) | 1987-07-21 |
| JPH0152891B2 JPH0152891B2 (enrdf_load_stackoverflow) | 1989-11-10 |
Family
ID=11633542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP626286A Granted JPS62165318A (ja) | 1986-01-17 | 1986-01-17 | 分子線結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62165318A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01177277U (enrdf_load_stackoverflow) * | 1988-06-02 | 1989-12-18 |
-
1986
- 1986-01-17 JP JP626286A patent/JPS62165318A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01177277U (enrdf_load_stackoverflow) * | 1988-06-02 | 1989-12-18 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0152891B2 (enrdf_load_stackoverflow) | 1989-11-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |