JPS62163325A - ドライエツチング方法 - Google Patents
ドライエツチング方法Info
- Publication number
- JPS62163325A JPS62163325A JP543386A JP543386A JPS62163325A JP S62163325 A JPS62163325 A JP S62163325A JP 543386 A JP543386 A JP 543386A JP 543386 A JP543386 A JP 543386A JP S62163325 A JPS62163325 A JP S62163325A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- flow rate
- pressure
- etched
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 16
- 238000005530 etching Methods 0.000 claims abstract description 126
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 7
- 238000011084 recovery Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 32
- 238000010586 diagram Methods 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP543386A JPS62163325A (ja) | 1986-01-14 | 1986-01-14 | ドライエツチング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP543386A JPS62163325A (ja) | 1986-01-14 | 1986-01-14 | ドライエツチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62163325A true JPS62163325A (ja) | 1987-07-20 |
JPH0513374B2 JPH0513374B2 (enrdf_load_stackoverflow) | 1993-02-22 |
Family
ID=11611060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP543386A Granted JPS62163325A (ja) | 1986-01-14 | 1986-01-14 | ドライエツチング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62163325A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03135024A (ja) * | 1989-10-20 | 1991-06-10 | Tokyo Electron Ltd | 基板の処理方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0956951A (ja) * | 1995-08-29 | 1997-03-04 | Nara Sewing Mach Kogyo Kk | ミシンの糸倒れ防止装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5561026A (en) * | 1978-10-30 | 1980-05-08 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Gas plasma etching device |
JPS5729577A (en) * | 1980-07-30 | 1982-02-17 | Anelva Corp | Automatic continuous sputtering apparatus |
JPS6050924A (ja) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | 半導体製造装置 |
JPS60138908A (ja) * | 1983-12-27 | 1985-07-23 | Toshiba Corp | 減圧cvd装置 |
-
1986
- 1986-01-14 JP JP543386A patent/JPS62163325A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5561026A (en) * | 1978-10-30 | 1980-05-08 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Gas plasma etching device |
JPS5729577A (en) * | 1980-07-30 | 1982-02-17 | Anelva Corp | Automatic continuous sputtering apparatus |
JPS6050924A (ja) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | 半導体製造装置 |
JPS60138908A (ja) * | 1983-12-27 | 1985-07-23 | Toshiba Corp | 減圧cvd装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03135024A (ja) * | 1989-10-20 | 1991-06-10 | Tokyo Electron Ltd | 基板の処理方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0513374B2 (enrdf_load_stackoverflow) | 1993-02-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4563240A (en) | Method and apparatus for plasma process | |
JP3874610B2 (ja) | 真空処理のための同期的多重化型略零オーバーヘッドのアーキテクチャ | |
US6871656B2 (en) | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process | |
JPH10240356A (ja) | 基板処理装置の基板温度制御法と基板温度制御性判定法 | |
JPH11330215A (ja) | 基板温度制御方法及び装置 | |
JP4825689B2 (ja) | 真空処理装置 | |
EP1069597B1 (en) | Apparatus and method for manufacturing semiconductor device | |
JPS62163325A (ja) | ドライエツチング方法 | |
KR102653253B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
JPH0387386A (ja) | 基板処理装置及び真空処理方法 | |
JPH0476492B2 (enrdf_load_stackoverflow) | ||
JP3184666B2 (ja) | プラズマ装置の運転方法 | |
JP2928555B2 (ja) | プラズマ処理装置 | |
JPH06302557A (ja) | ドライエッチング装置 | |
JP3596757B2 (ja) | 真空チャンバーの減圧方法 | |
JPH06101446B2 (ja) | プラズマ処理方法およびプラズマ処理装置 | |
JPH0598434A (ja) | マルチチヤンバー型スパツタリング装置 | |
JP2004119448A (ja) | プラズマエッチング装置およびプラズマエッチング方法 | |
JPS6024017A (ja) | 処理ガス圧力調整方法 | |
JP2881154B2 (ja) | 真空排気装置 | |
US5254216A (en) | Oxygen scavenging in a plasma reactor | |
JPS59117227A (ja) | ウエハ処理装置 | |
JPS61227184A (ja) | プラズマエツチング装置 | |
KR19990039091U (ko) | 반도체 웨이퍼 식각장비의 웨이퍼 냉각용 가스압력 제어장치 | |
JPH10163291A (ja) | 半導体製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |