JPS5561026A - Gas plasma etching device - Google Patents

Gas plasma etching device

Info

Publication number
JPS5561026A
JPS5561026A JP13393478A JP13393478A JPS5561026A JP S5561026 A JPS5561026 A JP S5561026A JP 13393478 A JP13393478 A JP 13393478A JP 13393478 A JP13393478 A JP 13393478A JP S5561026 A JPS5561026 A JP S5561026A
Authority
JP
Japan
Prior art keywords
tank
door
closing
opening
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13393478A
Other languages
Japanese (ja)
Inventor
Mineto Tobinaga
Hiroyoshi Komiya
Hiroyasu Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13393478A priority Critical patent/JPS5561026A/en
Publication of JPS5561026A publication Critical patent/JPS5561026A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To improve etching characteristics and controllability by providing a spare exhaust tank between a reaction tank and the air, so that the interior of the reaction tank may not be exposed directly to the air.
CONSTITUTION: First closing a screening door 18 separating a reaction tank 8 from a spare exhaust tank 16; pouring an inactive gas into the tank 16 while opening the front door 15 to insert the material 10 to be etched into the tank 16, the door 15 is closed to exhaust the contents in the tank 16. Then opening the back door 18 so as to transfer the material 10 from the tank 16 to the reaction tank 8, contents contained in the tank 8 is exhaused from the inside by closing the door 18. Thence gas plasma etching is conducted by applying high-frequency current to a plate high-frequency electrode 9 while adding a gas containing an etching agent. After the completion of etching, the tank 8 is exhaused while opening the door 9 so as to transfer the material 10 to a tank 16 under low pressure, then the material 10 is recovered by pouring an inactive gas into the tank 16 while closing the door 18. By so doing, the penetration of the air into the tank 8 can be prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP13393478A 1978-10-30 1978-10-30 Gas plasma etching device Pending JPS5561026A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13393478A JPS5561026A (en) 1978-10-30 1978-10-30 Gas plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13393478A JPS5561026A (en) 1978-10-30 1978-10-30 Gas plasma etching device

Publications (1)

Publication Number Publication Date
JPS5561026A true JPS5561026A (en) 1980-05-08

Family

ID=15116480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13393478A Pending JPS5561026A (en) 1978-10-30 1978-10-30 Gas plasma etching device

Country Status (1)

Country Link
JP (1) JPS5561026A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57203779A (en) * 1981-06-08 1982-12-14 Fujitsu Ltd Plasma etching device
JPS58213429A (en) * 1982-06-07 1983-12-12 Nec Corp Dry etching device
JPS60150633A (en) * 1984-01-18 1985-08-08 Kokusai Electric Co Ltd Loadlock chamber of plasma etching device
JPS62163325A (en) * 1986-01-14 1987-07-20 Matsushita Electric Ind Co Ltd Dry etching method
JPH0285378A (en) * 1988-09-22 1990-03-26 Hitachi Ltd Plasma etching method
JPH0339837U (en) * 1989-08-29 1991-04-17

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5298475A (en) * 1976-02-16 1977-08-18 Hitachi Ltd Plasma treating apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5298475A (en) * 1976-02-16 1977-08-18 Hitachi Ltd Plasma treating apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57203779A (en) * 1981-06-08 1982-12-14 Fujitsu Ltd Plasma etching device
JPS6337191B2 (en) * 1981-06-08 1988-07-25 Fujitsu Ltd
JPS58213429A (en) * 1982-06-07 1983-12-12 Nec Corp Dry etching device
JPS60150633A (en) * 1984-01-18 1985-08-08 Kokusai Electric Co Ltd Loadlock chamber of plasma etching device
JPS62163325A (en) * 1986-01-14 1987-07-20 Matsushita Electric Ind Co Ltd Dry etching method
JPH0513374B2 (en) * 1986-01-14 1993-02-22 Matsushita Electric Ind Co Ltd
JPH0285378A (en) * 1988-09-22 1990-03-26 Hitachi Ltd Plasma etching method
JPH0339837U (en) * 1989-08-29 1991-04-17

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