JPS62157398A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS62157398A
JPS62157398A JP60297014A JP29701485A JPS62157398A JP S62157398 A JPS62157398 A JP S62157398A JP 60297014 A JP60297014 A JP 60297014A JP 29701485 A JP29701485 A JP 29701485A JP S62157398 A JPS62157398 A JP S62157398A
Authority
JP
Japan
Prior art keywords
line
electric potential
potential
signal
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60297014A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0555959B2 (enrdf_load_stackoverflow
Inventor
Takashi Osawa
隆 大澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60297014A priority Critical patent/JPS62157398A/ja
Publication of JPS62157398A publication Critical patent/JPS62157398A/ja
Publication of JPH0555959B2 publication Critical patent/JPH0555959B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
JP60297014A 1985-12-28 1985-12-28 半導体記憶装置 Granted JPS62157398A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60297014A JPS62157398A (ja) 1985-12-28 1985-12-28 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60297014A JPS62157398A (ja) 1985-12-28 1985-12-28 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS62157398A true JPS62157398A (ja) 1987-07-13
JPH0555959B2 JPH0555959B2 (enrdf_load_stackoverflow) 1993-08-18

Family

ID=17841127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60297014A Granted JPS62157398A (ja) 1985-12-28 1985-12-28 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS62157398A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0413291A (ja) * 1990-05-01 1992-01-17 Sharp Corp 半導体記憶装置
JPH04216394A (ja) * 1990-12-14 1992-08-06 Toshiba Corp 半導体記憶装置
JPH04228179A (ja) * 1990-05-18 1992-08-18 Nec Corp 半導体メモリ装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113545A (en) * 1975-03-31 1976-10-06 Hitachi Ltd Memory
JPS6025096A (ja) * 1983-07-22 1985-02-07 Toshiba Corp センス回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113545A (en) * 1975-03-31 1976-10-06 Hitachi Ltd Memory
JPS6025096A (ja) * 1983-07-22 1985-02-07 Toshiba Corp センス回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0413291A (ja) * 1990-05-01 1992-01-17 Sharp Corp 半導体記憶装置
JPH04228179A (ja) * 1990-05-18 1992-08-18 Nec Corp 半導体メモリ装置
JPH04216394A (ja) * 1990-12-14 1992-08-06 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH0555959B2 (enrdf_load_stackoverflow) 1993-08-18

Similar Documents

Publication Publication Date Title
JPS6363197A (ja) 半導体記憶装置
JPH0253879B2 (enrdf_load_stackoverflow)
JPS61253695A (ja) 半導体記憶装置
JPH0422318B2 (enrdf_load_stackoverflow)
US7177176B2 (en) Six-transistor (6T) static random access memory (SRAM) with dynamically variable p-channel metal oxide semiconductor (PMOS) strength
US4338679A (en) Row driver circuit for semiconductor memory
US5696724A (en) Sense amplifier
JPS59203298A (ja) 半導体メモリ
JPH03272087A (ja) 半導体記憶装置
KR910004733B1 (ko) 데이타 버스 리셋트 회로를 지닌 반도체 기억장치
US6128238A (en) Direct sensing semiconductor memory device
JPS62157398A (ja) 半導体記憶装置
JP2573272B2 (ja) 半導体記憶装置
JPH04184787A (ja) ダイナミック型半導体記憶装置
JP2713929B2 (ja) 半導体記憶装置
US6316812B1 (en) Static semiconductor memory device with expanded operating voltage range
JPH01192078A (ja) 半導体記憶装置及びレベルシフト回路
JPH041434B2 (enrdf_load_stackoverflow)
JP3298123B2 (ja) マルチポートｓｒａｍ
JPS6383992A (ja) Ｌｓｉメモリ
JP2003257184A (ja) 半導体記憶装置
JP3487019B2 (ja) 半導体記憶装置
JPS6334796A (ja) 半導体記憶装置
JPH0823995B2 (ja) 半導体記憶装置
US5933371A (en) Write amplifier for use in semiconductor memory device

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term