JPS6214948B2 - - Google Patents
Info
- Publication number
- JPS6214948B2 JPS6214948B2 JP51123801A JP12380176A JPS6214948B2 JP S6214948 B2 JPS6214948 B2 JP S6214948B2 JP 51123801 A JP51123801 A JP 51123801A JP 12380176 A JP12380176 A JP 12380176A JP S6214948 B2 JPS6214948 B2 JP S6214948B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- silicon oxide
- type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 229910052814 silicon oxide Inorganic materials 0.000 description 29
- 150000004767 nitrides Chemical class 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12380176A JPS5349964A (en) | 1976-10-18 | 1976-10-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12380176A JPS5349964A (en) | 1976-10-18 | 1976-10-18 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5349964A JPS5349964A (en) | 1978-05-06 |
| JPS6214948B2 true JPS6214948B2 (de) | 1987-04-04 |
Family
ID=14869642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12380176A Granted JPS5349964A (en) | 1976-10-18 | 1976-10-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5349964A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135965A (en) * | 1980-03-28 | 1981-10-23 | Nec Corp | Semiconductor device |
| JP3578110B2 (ja) | 2000-06-15 | 2004-10-20 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS498228A (de) * | 1972-03-23 | 1974-01-24 | ||
| JPS509390A (de) * | 1973-05-22 | 1975-01-30 | ||
| JPS5010579A (de) * | 1973-05-25 | 1975-02-03 | ||
| JPS50130374A (de) * | 1974-03-30 | 1975-10-15 |
-
1976
- 1976-10-18 JP JP12380176A patent/JPS5349964A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS498228A (de) * | 1972-03-23 | 1974-01-24 | ||
| JPS509390A (de) * | 1973-05-22 | 1975-01-30 | ||
| JPS5010579A (de) * | 1973-05-25 | 1975-02-03 | ||
| JPS50130374A (de) * | 1974-03-30 | 1975-10-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5349964A (en) | 1978-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4920401A (en) | Bipolar transistors | |
| KR970004458B1 (ko) | 싱글 터브 반도체 장치 제조 방법 | |
| US4740482A (en) | Method of manufacturing bipolar transistor | |
| US4473940A (en) | Method of producing a semiconductor device | |
| JPS6214948B2 (de) | ||
| JP3092854B2 (ja) | 半導体デバイス用のセルフアラインメント技術 | |
| JPS628939B2 (de) | ||
| JPS6228587B2 (de) | ||
| JPS6123665B2 (de) | ||
| US4469535A (en) | Method of fabricating semiconductor integrated circuit devices | |
| JP3877459B2 (ja) | 半導体装置の製造方法 | |
| JPS6244862B2 (de) | ||
| JP2526556B2 (ja) | ショットキバリヤダイオ−ドの製造方法 | |
| JPH01223741A (ja) | 半導体装置及びその製造方法 | |
| JPS6252966A (ja) | 半導体装置の製造方法 | |
| JPS5813032B2 (ja) | 半導体装置の製造方法 | |
| JPH0147900B2 (de) | ||
| JPS6041243A (ja) | 半導体装置の製造方法 | |
| JPH043432A (ja) | 半導体装置の製造方法 | |
| JPS61172369A (ja) | 半導体装置の製造方法 | |
| JPH0576769B2 (de) | ||
| JPS6184049A (ja) | 半導体装置の製造方法 | |
| JPS59151459A (ja) | 半導体装置の製造方法 | |
| JPS5835363B2 (ja) | 半導体装置の製法 | |
| JPS639150A (ja) | 半導体装置の製造方法 |