JPS509390A - - Google Patents
Info
- Publication number
- JPS509390A JPS509390A JP5805573A JP5805573A JPS509390A JP S509390 A JPS509390 A JP S509390A JP 5805573 A JP5805573 A JP 5805573A JP 5805573 A JP5805573 A JP 5805573A JP S509390 A JPS509390 A JP S509390A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5805573A JPS5729063B2 (de) | 1973-05-22 | 1973-05-22 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5805573A JPS5729063B2 (de) | 1973-05-22 | 1973-05-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS509390A true JPS509390A (de) | 1975-01-30 |
JPS5729063B2 JPS5729063B2 (de) | 1982-06-21 |
Family
ID=13073213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5805573A Expired JPS5729063B2 (de) | 1973-05-22 | 1973-05-22 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5729063B2 (de) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49122670A (de) * | 1973-03-23 | 1974-11-22 | Mitsubishi Electric Corp | |
JPS52117585A (en) * | 1976-03-29 | 1977-10-03 | Mitsubishi Electric Corp | Manufacture for insulating gate type field effect transistor |
JPS5349964A (en) * | 1976-10-18 | 1978-05-06 | Hitachi Ltd | Manufacture of semiconductor device |
JPS55153342A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Semiconductor device and its manufacture |
JPS5990925A (ja) * | 1982-11-17 | 1984-05-25 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS60142561A (ja) * | 1983-12-28 | 1985-07-27 | Matsushita Electric Ind Co Ltd | 撮像装置の製造方法 |
US5164806A (en) * | 1990-05-23 | 1992-11-17 | Mitsubishi Denki Kabushiki Kaisha | Element isolating structure of semiconductor device suitable for high density integration |
-
1973
- 1973-05-22 JP JP5805573A patent/JPS5729063B2/ja not_active Expired
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49122670A (de) * | 1973-03-23 | 1974-11-22 | Mitsubishi Electric Corp | |
JPS5317390B2 (de) * | 1973-03-23 | 1978-06-08 | Mitsubishi Electric Corp | |
JPS52117585A (en) * | 1976-03-29 | 1977-10-03 | Mitsubishi Electric Corp | Manufacture for insulating gate type field effect transistor |
JPS606105B2 (ja) * | 1976-03-29 | 1985-02-15 | 三菱電機株式会社 | 絶縁ゲ−ト型電界効果トランジスタの製造方法 |
JPS5349964A (en) * | 1976-10-18 | 1978-05-06 | Hitachi Ltd | Manufacture of semiconductor device |
JPS6214948B2 (de) * | 1976-10-18 | 1987-04-04 | Hitachi Ltd | |
JPS55153342A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Semiconductor device and its manufacture |
JPS5990925A (ja) * | 1982-11-17 | 1984-05-25 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPS60142561A (ja) * | 1983-12-28 | 1985-07-27 | Matsushita Electric Ind Co Ltd | 撮像装置の製造方法 |
US5164806A (en) * | 1990-05-23 | 1992-11-17 | Mitsubishi Denki Kabushiki Kaisha | Element isolating structure of semiconductor device suitable for high density integration |
Also Published As
Publication number | Publication date |
---|---|
JPS5729063B2 (de) | 1982-06-21 |