JPS52117585A - Manufacture for insulating gate type field effect transistor - Google Patents

Manufacture for insulating gate type field effect transistor

Info

Publication number
JPS52117585A
JPS52117585A JP3504676A JP3504676A JPS52117585A JP S52117585 A JPS52117585 A JP S52117585A JP 3504676 A JP3504676 A JP 3504676A JP 3504676 A JP3504676 A JP 3504676A JP S52117585 A JPS52117585 A JP S52117585A
Authority
JP
Japan
Prior art keywords
manufacture
field effect
effect transistor
type field
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3504676A
Other languages
Japanese (ja)
Other versions
JPS606105B2 (en
Inventor
Hayaaki Fukumoto
Junichi Mihashi
Satoru Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP51035046A priority Critical patent/JPS606105B2/en
Publication of JPS52117585A publication Critical patent/JPS52117585A/en
Publication of JPS606105B2 publication Critical patent/JPS606105B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To enable higher integration, by injecting ion to the field domain, after B injection to the channel domain first and high temperature heat processing, next, by shortening the channel length thru the effective high impurity density for the channel and field domain with the diffusion of the source drain domain and selective oxidation.
COPYRIGHT: (C)1977,JPO&Japio
JP51035046A 1976-03-29 1976-03-29 Manufacturing method of insulated gate field effect transistor Expired JPS606105B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51035046A JPS606105B2 (en) 1976-03-29 1976-03-29 Manufacturing method of insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51035046A JPS606105B2 (en) 1976-03-29 1976-03-29 Manufacturing method of insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS52117585A true JPS52117585A (en) 1977-10-03
JPS606105B2 JPS606105B2 (en) 1985-02-15

Family

ID=12431086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51035046A Expired JPS606105B2 (en) 1976-03-29 1976-03-29 Manufacturing method of insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS606105B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498185A (en) * 1978-01-19 1979-08-02 Nec Corp Preparation of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage
JPS4979189A (en) * 1972-11-01 1974-07-31
JPS509390A (en) * 1973-05-22 1975-01-30

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage
JPS4979189A (en) * 1972-11-01 1974-07-31
JPS509390A (en) * 1973-05-22 1975-01-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498185A (en) * 1978-01-19 1979-08-02 Nec Corp Preparation of semiconductor device

Also Published As

Publication number Publication date
JPS606105B2 (en) 1985-02-15

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