JPS52117585A - Manufacture for insulating gate type field effect transistor - Google Patents
Manufacture for insulating gate type field effect transistorInfo
- Publication number
- JPS52117585A JPS52117585A JP3504676A JP3504676A JPS52117585A JP S52117585 A JPS52117585 A JP S52117585A JP 3504676 A JP3504676 A JP 3504676A JP 3504676 A JP3504676 A JP 3504676A JP S52117585 A JPS52117585 A JP S52117585A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- field effect
- effect transistor
- type field
- gate type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To enable higher integration, by injecting ion to the field domain, after B injection to the channel domain first and high temperature heat processing, next, by shortening the channel length thru the effective high impurity density for the channel and field domain with the diffusion of the source drain domain and selective oxidation.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51035046A JPS606105B2 (en) | 1976-03-29 | 1976-03-29 | Manufacturing method of insulated gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51035046A JPS606105B2 (en) | 1976-03-29 | 1976-03-29 | Manufacturing method of insulated gate field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52117585A true JPS52117585A (en) | 1977-10-03 |
JPS606105B2 JPS606105B2 (en) | 1985-02-15 |
Family
ID=12431086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51035046A Expired JPS606105B2 (en) | 1976-03-29 | 1976-03-29 | Manufacturing method of insulated gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS606105B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5498185A (en) * | 1978-01-19 | 1979-08-02 | Nec Corp | Preparation of semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
JPS4979189A (en) * | 1972-11-01 | 1974-07-31 | ||
JPS509390A (en) * | 1973-05-22 | 1975-01-30 |
-
1976
- 1976-03-29 JP JP51035046A patent/JPS606105B2/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
JPS4979189A (en) * | 1972-11-01 | 1974-07-31 | ||
JPS509390A (en) * | 1973-05-22 | 1975-01-30 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5498185A (en) * | 1978-01-19 | 1979-08-02 | Nec Corp | Preparation of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS606105B2 (en) | 1985-02-15 |
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