JPS6214456A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS6214456A
JPS6214456A JP60153517A JP15351785A JPS6214456A JP S6214456 A JPS6214456 A JP S6214456A JP 60153517 A JP60153517 A JP 60153517A JP 15351785 A JP15351785 A JP 15351785A JP S6214456 A JPS6214456 A JP S6214456A
Authority
JP
Japan
Prior art keywords
transistor
base
current mirror
region
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60153517A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0442827B2 (enEXAMPLES
Inventor
Haruji Futami
二見　治司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60153517A priority Critical patent/JPS6214456A/ja
Publication of JPS6214456A publication Critical patent/JPS6214456A/ja
Publication of JPH0442827B2 publication Critical patent/JPH0442827B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP60153517A 1985-07-11 1985-07-11 半導体集積回路装置 Granted JPS6214456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60153517A JPS6214456A (ja) 1985-07-11 1985-07-11 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60153517A JPS6214456A (ja) 1985-07-11 1985-07-11 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS6214456A true JPS6214456A (ja) 1987-01-23
JPH0442827B2 JPH0442827B2 (enEXAMPLES) 1992-07-14

Family

ID=15564265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60153517A Granted JPS6214456A (ja) 1985-07-11 1985-07-11 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS6214456A (enEXAMPLES)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0289341A (ja) * 1988-09-27 1990-03-29 Matsushita Electron Corp 半導体集積回路
US5744855A (en) * 1994-12-02 1998-04-28 Mitsubishi Denki Kabushiki Kaisha Single-poly-type bipolar transistor
US7235860B2 (en) 2001-07-27 2007-06-26 Nec Electronics Corporation Bipolar transistor including divided emitter structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0289341A (ja) * 1988-09-27 1990-03-29 Matsushita Electron Corp 半導体集積回路
US5744855A (en) * 1994-12-02 1998-04-28 Mitsubishi Denki Kabushiki Kaisha Single-poly-type bipolar transistor
US7235860B2 (en) 2001-07-27 2007-06-26 Nec Electronics Corporation Bipolar transistor including divided emitter structure
US7239007B2 (en) 2001-07-27 2007-07-03 Nec Electronics Corporation Bipolar transistor with divided base and emitter regions

Also Published As

Publication number Publication date
JPH0442827B2 (enEXAMPLES) 1992-07-14

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