JPS62141759A - 半導体記憶装置の製造方法 - Google Patents

半導体記憶装置の製造方法

Info

Publication number
JPS62141759A
JPS62141759A JP60284630A JP28463085A JPS62141759A JP S62141759 A JPS62141759 A JP S62141759A JP 60284630 A JP60284630 A JP 60284630A JP 28463085 A JP28463085 A JP 28463085A JP S62141759 A JPS62141759 A JP S62141759A
Authority
JP
Japan
Prior art keywords
region
impurity
conductivity
type
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60284630A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0584673B2 (enExample
Inventor
Masayuki Nakajima
真之 中島
Shinichi Sato
真一 佐藤
Akira Tokui
徳井　晶
Akira Kawai
河合　晃
Masao Nagatomo
長友　正男
Koji Ozaki
浩司 小崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60284630A priority Critical patent/JPS62141759A/ja
Priority to DE19863639058 priority patent/DE3639058A1/de
Priority to US06/931,583 priority patent/US4702796A/en
Publication of JPS62141759A publication Critical patent/JPS62141759A/ja
Publication of JPH0584673B2 publication Critical patent/JPH0584673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP60284630A 1985-12-16 1985-12-16 半導体記憶装置の製造方法 Granted JPS62141759A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60284630A JPS62141759A (ja) 1985-12-16 1985-12-16 半導体記憶装置の製造方法
DE19863639058 DE3639058A1 (de) 1985-12-16 1986-11-14 Verfahren zur herstellung einer halbleitereinrichtung
US06/931,583 US4702796A (en) 1985-12-16 1986-11-14 Method for fabricting a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60284630A JPS62141759A (ja) 1985-12-16 1985-12-16 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62141759A true JPS62141759A (ja) 1987-06-25
JPH0584673B2 JPH0584673B2 (enExample) 1993-12-02

Family

ID=17680955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60284630A Granted JPS62141759A (ja) 1985-12-16 1985-12-16 半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS62141759A (enExample)

Also Published As

Publication number Publication date
JPH0584673B2 (enExample) 1993-12-02

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