JPS6214106B2 - - Google Patents
Info
- Publication number
- JPS6214106B2 JPS6214106B2 JP54032795A JP3279579A JPS6214106B2 JP S6214106 B2 JPS6214106 B2 JP S6214106B2 JP 54032795 A JP54032795 A JP 54032795A JP 3279579 A JP3279579 A JP 3279579A JP S6214106 B2 JPS6214106 B2 JP S6214106B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- field effect
- effect transistor
- porous
- junction field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
Landscapes
- Local Oxidation Of Silicon (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3279579A JPS55124270A (en) | 1979-03-19 | 1979-03-19 | Junction type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3279579A JPS55124270A (en) | 1979-03-19 | 1979-03-19 | Junction type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55124270A JPS55124270A (en) | 1980-09-25 |
| JPS6214106B2 true JPS6214106B2 (enExample) | 1987-03-31 |
Family
ID=12368776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3279579A Granted JPS55124270A (en) | 1979-03-19 | 1979-03-19 | Junction type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55124270A (enExample) |
-
1979
- 1979-03-19 JP JP3279579A patent/JPS55124270A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55124270A (en) | 1980-09-25 |
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