JPS62128554A - ガリウム砒素半導体集積回路 - Google Patents

ガリウム砒素半導体集積回路

Info

Publication number
JPS62128554A
JPS62128554A JP60268377A JP26837785A JPS62128554A JP S62128554 A JPS62128554 A JP S62128554A JP 60268377 A JP60268377 A JP 60268377A JP 26837785 A JP26837785 A JP 26837785A JP S62128554 A JPS62128554 A JP S62128554A
Authority
JP
Japan
Prior art keywords
normally
gate
mesfet
node
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60268377A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0411131B2 (enrdf_load_stackoverflow
Inventor
Satoshi Takano
聡 高野
Hiroyuki Makino
博之 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60268377A priority Critical patent/JPS62128554A/ja
Publication of JPS62128554A publication Critical patent/JPS62128554A/ja
Publication of JPH0411131B2 publication Critical patent/JPH0411131B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP60268377A 1985-11-30 1985-11-30 ガリウム砒素半導体集積回路 Granted JPS62128554A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60268377A JPS62128554A (ja) 1985-11-30 1985-11-30 ガリウム砒素半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60268377A JPS62128554A (ja) 1985-11-30 1985-11-30 ガリウム砒素半導体集積回路

Publications (2)

Publication Number Publication Date
JPS62128554A true JPS62128554A (ja) 1987-06-10
JPH0411131B2 JPH0411131B2 (enrdf_load_stackoverflow) 1992-02-27

Family

ID=17457645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60268377A Granted JPS62128554A (ja) 1985-11-30 1985-11-30 ガリウム砒素半導体集積回路

Country Status (1)

Country Link
JP (1) JPS62128554A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5492158U (enrdf_load_stackoverflow) * 1977-12-13 1979-06-29
JPS58130620A (ja) * 1982-01-29 1983-08-04 Toshiba Corp 論理回路
JPS59224174A (ja) * 1983-06-03 1984-12-17 Hitachi Ltd ガリウム砒素集積回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5492158U (enrdf_load_stackoverflow) * 1977-12-13 1979-06-29
JPS58130620A (ja) * 1982-01-29 1983-08-04 Toshiba Corp 論理回路
JPS59224174A (ja) * 1983-06-03 1984-12-17 Hitachi Ltd ガリウム砒素集積回路

Also Published As

Publication number Publication date
JPH0411131B2 (enrdf_load_stackoverflow) 1992-02-27

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term