JPS62127437A - 半導体素子用ボンデイング線 - Google Patents
半導体素子用ボンデイング線Info
- Publication number
- JPS62127437A JPS62127437A JP60265620A JP26562085A JPS62127437A JP S62127437 A JPS62127437 A JP S62127437A JP 60265620 A JP60265620 A JP 60265620A JP 26562085 A JP26562085 A JP 26562085A JP S62127437 A JPS62127437 A JP S62127437A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- gold
- copper
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01205—5N purity grades, i.e. 99.999%
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60265620A JPS62127437A (ja) | 1985-11-26 | 1985-11-26 | 半導体素子用ボンデイング線 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60265620A JPS62127437A (ja) | 1985-11-26 | 1985-11-26 | 半導体素子用ボンデイング線 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62127437A true JPS62127437A (ja) | 1987-06-09 |
JPH0222130B2 JPH0222130B2 (de) | 1990-05-17 |
Family
ID=17419663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60265620A Granted JPS62127437A (ja) | 1985-11-26 | 1985-11-26 | 半導体素子用ボンデイング線 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62127437A (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6321841A (ja) * | 1986-07-16 | 1988-01-29 | Toshiba Corp | 半導体装置 |
JPS6365035A (ja) * | 1986-09-05 | 1988-03-23 | Furukawa Electric Co Ltd:The | 銅細線とその製造方法 |
JPH02232327A (ja) * | 1989-03-06 | 1990-09-14 | Nippon Mining Co Ltd | 加工性,耐熱性の優れた高導電性銅合金 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6049706A (ja) * | 1983-08-30 | 1985-03-19 | ヤンマー農機株式会社 | 収穫機の刈高さ自動調節装置 |
JPS60194032A (ja) * | 1984-03-15 | 1985-10-02 | Sumitomo Metal Mining Co Ltd | 軟化温度の低い高導電用銅材 |
JPS6199645A (ja) * | 1984-10-20 | 1986-05-17 | Tanaka Denshi Kogyo Kk | 半導体素子のボンデイング用銅線 |
JPS61221335A (ja) * | 1985-03-27 | 1986-10-01 | Mitsubishi Metal Corp | 極軟質銅材の製造法 |
JPS61259558A (ja) * | 1985-05-14 | 1986-11-17 | Mitsubishi Metal Corp | 半導体装置用Cu合金製ボンディングワイヤ |
JPS62102551A (ja) * | 1985-10-30 | 1987-05-13 | Toshiba Corp | 半導体装置 |
-
1985
- 1985-11-26 JP JP60265620A patent/JPS62127437A/ja active Granted
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6049706A (ja) * | 1983-08-30 | 1985-03-19 | ヤンマー農機株式会社 | 収穫機の刈高さ自動調節装置 |
JPS60194032A (ja) * | 1984-03-15 | 1985-10-02 | Sumitomo Metal Mining Co Ltd | 軟化温度の低い高導電用銅材 |
JPS6199645A (ja) * | 1984-10-20 | 1986-05-17 | Tanaka Denshi Kogyo Kk | 半導体素子のボンデイング用銅線 |
JPS61221335A (ja) * | 1985-03-27 | 1986-10-01 | Mitsubishi Metal Corp | 極軟質銅材の製造法 |
JPS61259558A (ja) * | 1985-05-14 | 1986-11-17 | Mitsubishi Metal Corp | 半導体装置用Cu合金製ボンディングワイヤ |
JPS62102551A (ja) * | 1985-10-30 | 1987-05-13 | Toshiba Corp | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6321841A (ja) * | 1986-07-16 | 1988-01-29 | Toshiba Corp | 半導体装置 |
JPS6365035A (ja) * | 1986-09-05 | 1988-03-23 | Furukawa Electric Co Ltd:The | 銅細線とその製造方法 |
JPH02232327A (ja) * | 1989-03-06 | 1990-09-14 | Nippon Mining Co Ltd | 加工性,耐熱性の優れた高導電性銅合金 |
Also Published As
Publication number | Publication date |
---|---|
JPH0222130B2 (de) | 1990-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0922780B1 (de) | Verfahren zur Herstellung von einer hochreinen Hartgoldlegierung | |
JPS62127438A (ja) | 半導体素子用ボンディング線 | |
JPS62228440A (ja) | 半導体素子ボンデイング用金線 | |
JP2873770B2 (ja) | 半導体素子のワイヤボンディング用パラジウム細線 | |
JPS62278241A (ja) | ボンデイングワイヤ | |
JP2911886B2 (ja) | セリウムミッシュメタルを含有する金合金から成る極細線及びその製造方法 | |
JPH0713273B2 (ja) | 半導体素子用ボンディング線およびその製造方法 | |
JPS63235440A (ja) | 銅細線及びその製造方法 | |
JPS63211731A (ja) | ボンデイング線 | |
JPS62127437A (ja) | 半導体素子用ボンデイング線 | |
JPS62127436A (ja) | 半導体素子用ボンディング線 | |
JP3090549B2 (ja) | 半導体素子用ボンディング線 | |
JPS63235442A (ja) | 銅細線及びその製造方法 | |
JPH0464121B2 (de) | ||
JPH06112258A (ja) | 半導体素子用ボンディング線 | |
JPH084099B2 (ja) | 耐食性に優れた半導体素子用銅ボンディング線 | |
JPS63118033A (ja) | ボンデイングワイヤ−及びその製造方法 | |
JPS63241942A (ja) | 銅細線及びその製造方法 | |
JPS61110735A (ja) | 耐熱性に優れた金合金 | |
JPH0131691B2 (de) | ||
JP2706539B2 (ja) | ボンディングワイヤー | |
JPS63247325A (ja) | 銅細線及びその製造方法 | |
JPS633424A (ja) | 配線性に優れた半導体素子用銅ボンディング線の製造方法 | |
JPS63227733A (ja) | 耐熱性に優れた金合金 | |
JPH0131692B2 (de) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |