JPS621269B2 - - Google Patents

Info

Publication number
JPS621269B2
JPS621269B2 JP55040642A JP4064280A JPS621269B2 JP S621269 B2 JPS621269 B2 JP S621269B2 JP 55040642 A JP55040642 A JP 55040642A JP 4064280 A JP4064280 A JP 4064280A JP S621269 B2 JPS621269 B2 JP S621269B2
Authority
JP
Japan
Prior art keywords
manufacturing
polycrystalline silicon
layer
semiconductor device
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55040642A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56135972A (en
Inventor
Tadashi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP4064280A priority Critical patent/JPS56135972A/ja
Publication of JPS56135972A publication Critical patent/JPS56135972A/ja
Publication of JPS621269B2 publication Critical patent/JPS621269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP4064280A 1980-03-28 1980-03-28 Manufacture of semiconductor device Granted JPS56135972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4064280A JPS56135972A (en) 1980-03-28 1980-03-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4064280A JPS56135972A (en) 1980-03-28 1980-03-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56135972A JPS56135972A (en) 1981-10-23
JPS621269B2 true JPS621269B2 (cg-RX-API-DMAC10.html) 1987-01-12

Family

ID=12586205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4064280A Granted JPS56135972A (en) 1980-03-28 1980-03-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56135972A (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US4621411A (en) * 1984-09-28 1986-11-11 Texas Instruments Incorporated Laser-enhanced drive in of source and drain diffusions
US6747245B2 (en) * 2002-11-06 2004-06-08 Ultratech Stepper, Inc. Laser scanning apparatus and methods for thermal processing

Also Published As

Publication number Publication date
JPS56135972A (en) 1981-10-23

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