JPS6212509B2 - - Google Patents

Info

Publication number
JPS6212509B2
JPS6212509B2 JP53053604A JP5360478A JPS6212509B2 JP S6212509 B2 JPS6212509 B2 JP S6212509B2 JP 53053604 A JP53053604 A JP 53053604A JP 5360478 A JP5360478 A JP 5360478A JP S6212509 B2 JPS6212509 B2 JP S6212509B2
Authority
JP
Japan
Prior art keywords
gas
image forming
photoconductive layer
electrophotographic image
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53053604A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54145537A (en
Inventor
Toshuki Komatsu
Yutaka Hirai
Katsumi Nakagawa
Tadaharu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP5360478A priority Critical patent/JPS54145537A/ja
Publication of JPS54145537A publication Critical patent/JPS54145537A/ja
Publication of JPS6212509B2 publication Critical patent/JPS6212509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP5360478A 1978-05-04 1978-05-04 Preparation of electrophotographic image forming material Granted JPS54145537A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5360478A JPS54145537A (en) 1978-05-04 1978-05-04 Preparation of electrophotographic image forming material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5360478A JPS54145537A (en) 1978-05-04 1978-05-04 Preparation of electrophotographic image forming material

Publications (2)

Publication Number Publication Date
JPS54145537A JPS54145537A (en) 1979-11-13
JPS6212509B2 true JPS6212509B2 (enrdf_load_stackoverflow) 1987-03-19

Family

ID=12947480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5360478A Granted JPS54145537A (en) 1978-05-04 1978-05-04 Preparation of electrophotographic image forming material

Country Status (1)

Country Link
JP (1) JPS54145537A (enrdf_load_stackoverflow)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484809B1 (en) * 1977-12-05 1995-04-18 Plasma Physics Corp Glow discharge method and apparatus and photoreceptor devices made therewith
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
JPS56156834A (en) * 1980-05-08 1981-12-03 Minolta Camera Co Ltd Electrophotographic receptor
JPS56161551A (en) * 1980-05-16 1981-12-11 Canon Inc Image forming member for electrophotography
US4889783A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer
JPS57119362A (en) * 1981-01-17 1982-07-24 Canon Inc Photoconductive member
JPS57177152A (en) * 1981-04-24 1982-10-30 Canon Inc Electrophotographic image forming material
JPS57200047A (en) * 1981-06-02 1982-12-08 Nippon Telegr & Teleph Corp <Ntt> Electrophotographic photoreceptor
JPH0629977B2 (ja) * 1981-06-08 1994-04-20 株式会社半導体エネルギー研究所 電子写真用感光体
JPH0723962B2 (ja) * 1981-09-24 1995-03-15 株式会社半導体エネルギ−研究所 ドラム形感光体の作製方法
JPS58145951A (ja) * 1982-02-24 1983-08-31 Stanley Electric Co Ltd アモルフアスシリコン感光体
JPS58152255A (ja) * 1982-03-05 1983-09-09 Stanley Electric Co Ltd 電子写真用感光体
JPH0635323B2 (ja) * 1982-06-25 1994-05-11 株式会社日立製作所 表面処理方法
JPS5983168A (ja) * 1982-11-05 1984-05-14 Stanley Electric Co Ltd 電子写真感光体
JPS6017452A (ja) * 1984-06-25 1985-01-29 Shunpei Yamazaki 複写機の作製方法
JPS6017451A (ja) * 1984-06-25 1985-01-29 Shunpei Yamazaki 複写機の作製方法
JPS61116361A (ja) * 1984-11-10 1986-06-03 Matsushita Electric Ind Co Ltd 電子写真感光体
JP2617417B2 (ja) * 1993-10-25 1997-06-04 株式会社 半導体エネルギー研究所 電子写真用感光体

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3650737A (en) * 1968-03-25 1972-03-21 Ibm Imaging method using photoconductive element having a protective coating
JPS4843142B1 (enrdf_load_stackoverflow) * 1969-08-27 1973-12-17
JPS5338620B2 (enrdf_load_stackoverflow) * 1972-03-07 1978-10-17
JPS49122337A (enrdf_load_stackoverflow) * 1973-03-23 1974-11-22
JPS5020728A (enrdf_load_stackoverflow) * 1973-06-20 1975-03-05
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
IT1062510B (it) * 1975-07-28 1984-10-20 Rca Corp Dispositivo semiconduttore presentante una regione attiva di silicio amorfo
CA1078078A (en) * 1976-03-22 1980-05-20 David E. Carlson Schottky barrier semiconductor device and method of making same
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication

Also Published As

Publication number Publication date
JPS54145537A (en) 1979-11-13

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