JPS56161551A - Image forming member for electrophotography - Google Patents
Image forming member for electrophotographyInfo
- Publication number
- JPS56161551A JPS56161551A JP6571480A JP6571480A JPS56161551A JP S56161551 A JPS56161551 A JP S56161551A JP 6571480 A JP6571480 A JP 6571480A JP 6571480 A JP6571480 A JP 6571480A JP S56161551 A JPS56161551 A JP S56161551A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- electrophotography
- image forming
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE:To form an optimum photoconductive layer and enhance the productivity by laminating a layer made of Si-base amorphous (a-Si) semiconductor contg. H or halogen and having a specified refractive index range and a layer having a specified filling degree on a support. CONSTITUTION:On an electrically conductive support 101 a layer 103 of an a-Si semiconductor contg. H or halogen is formed by a glow discharge method, an electron beam method or other method in 5-80mum thickness so that the refractive index (n) is adjusted to 2.5-3.5. A layer 104 of an a-Si semiconductor is then formed by a glow discharge method or other method in 2,000Angstrom -5mum thickness so that the filling degree is adjusted to 2.15g/cm<3>. The layers 103, 104 may be converted into P type or N type ones by doping with an N type impurity and/or a P type impurity in the layer forming processes. Thus, a photoconductive layer 102 is composed of the two different layers 103, 104 of a-Si semiconductors, and an image forming member having optimum structure for electrophotography is obtd. with superior reproducibility and productivity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6571480A JPS56161551A (en) | 1980-05-16 | 1980-05-16 | Image forming member for electrophotography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6571480A JPS56161551A (en) | 1980-05-16 | 1980-05-16 | Image forming member for electrophotography |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56161551A true JPS56161551A (en) | 1981-12-11 |
JPS6161388B2 JPS6161388B2 (en) | 1986-12-25 |
Family
ID=13294955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6571480A Granted JPS56161551A (en) | 1980-05-16 | 1980-05-16 | Image forming member for electrophotography |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56161551A (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3647427A (en) * | 1969-08-27 | 1972-03-07 | Canon Kk | Germanium and silicon additives to dual-layer electrophotographic plates |
JPS54121743A (en) * | 1978-03-14 | 1979-09-21 | Canon Inc | Electrophotographic image forming member |
JPS54143645A (en) * | 1978-04-28 | 1979-11-09 | Canon Inc | Image forming member for electrophotography |
JPS54145537A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Preparation of electrophotographic image forming material |
JPS56116036A (en) * | 1980-02-19 | 1981-09-11 | Fujitsu Ltd | Manufacture of electrophotographic receptor |
JPS56125881A (en) * | 1980-03-06 | 1981-10-02 | Fuji Photo Film Co Ltd | Optical semiconductor element |
-
1980
- 1980-05-16 JP JP6571480A patent/JPS56161551A/en active Granted
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3647427A (en) * | 1969-08-27 | 1972-03-07 | Canon Kk | Germanium and silicon additives to dual-layer electrophotographic plates |
JPS54121743A (en) * | 1978-03-14 | 1979-09-21 | Canon Inc | Electrophotographic image forming member |
JPS54143645A (en) * | 1978-04-28 | 1979-11-09 | Canon Inc | Image forming member for electrophotography |
JPS54145537A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Preparation of electrophotographic image forming material |
JPS56116036A (en) * | 1980-02-19 | 1981-09-11 | Fujitsu Ltd | Manufacture of electrophotographic receptor |
JPS56125881A (en) * | 1980-03-06 | 1981-10-02 | Fuji Photo Film Co Ltd | Optical semiconductor element |
Also Published As
Publication number | Publication date |
---|---|
JPS6161388B2 (en) | 1986-12-25 |
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