JPS6161103B2 - - Google Patents
Info
- Publication number
- JPS6161103B2 JPS6161103B2 JP53051851A JP5185178A JPS6161103B2 JP S6161103 B2 JPS6161103 B2 JP S6161103B2 JP 53051851 A JP53051851 A JP 53051851A JP 5185178 A JP5185178 A JP 5185178A JP S6161103 B2 JPS6161103 B2 JP S6161103B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- image forming
- forming member
- electrophotographic image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002894 organic compounds Chemical class 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 239000000969 carrier Substances 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 5
- 230000005284 excitation Effects 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000010410 layer Substances 0.000 description 436
- 239000007789 gas Substances 0.000 description 80
- 239000000758 substrate Substances 0.000 description 65
- 208000028659 discharge Diseases 0.000 description 46
- 238000000034 method Methods 0.000 description 46
- 239000000463 material Substances 0.000 description 39
- 239000012535 impurity Substances 0.000 description 38
- 238000000151 deposition Methods 0.000 description 34
- 230000008021 deposition Effects 0.000 description 33
- 238000004519 manufacturing process Methods 0.000 description 32
- 238000004544 sputter deposition Methods 0.000 description 19
- 239000002994 raw material Substances 0.000 description 17
- 239000002345 surface coating layer Substances 0.000 description 14
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 12
- 230000002441 reversible effect Effects 0.000 description 11
- -1 Al 2 O 3 Chemical class 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000011282 treatment Methods 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000011161 development Methods 0.000 description 8
- 229920002239 polyacrylonitrile Polymers 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- FKNIDKXOANSRCS-UHFFFAOYSA-N 2,3,4-trinitrofluoren-1-one Chemical compound C1=CC=C2C3=C([N+](=O)[O-])C([N+]([O-])=O)=C([N+]([O-])=O)C(=O)C3=CC2=C1 FKNIDKXOANSRCS-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 230000000704 physical effect Effects 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000007606 doctor blade method Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- DXBHBZVCASKNBY-UHFFFAOYSA-N 1,2-Benz(a)anthracene Chemical compound C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 DXBHBZVCASKNBY-UHFFFAOYSA-N 0.000 description 2
- KBSPJIWZDWBDGM-UHFFFAOYSA-N 1-Methylpyrene Chemical compound C1=C2C(C)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 KBSPJIWZDWBDGM-UHFFFAOYSA-N 0.000 description 2
- TURIHPLQSRVWHU-UHFFFAOYSA-N 2-phenylnaphthalene Chemical compound C1=CC=CC=C1C1=CC=C(C=CC=C2)C2=C1 TURIHPLQSRVWHU-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- FMMWHPNWAFZXNH-UHFFFAOYSA-N Benz[a]pyrene Chemical compound C1=C2C3=CC=CC=C3C=C(C=C3)C2=C2C3=CC=CC2=C1 FMMWHPNWAFZXNH-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- WDECIBYCCFPHNR-UHFFFAOYSA-N chrysene Chemical compound C1=CC=CC2=CC=C3C4=CC=CC=C4C=CC3=C21 WDECIBYCCFPHNR-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000005033 polyvinylidene chloride Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- BOHFWWWQMGFMPJ-UHFFFAOYSA-N 1,2,3,4-tetraphenylpyrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C2C=3C=CC=CC=3)=CC3=CC=CC4=CC=C2C1=C34 BOHFWWWQMGFMPJ-UHFFFAOYSA-N 0.000 description 1
- NMNSBFYYVHREEE-UHFFFAOYSA-N 1,2-dinitroanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=C([N+]([O-])=O)C([N+](=O)[O-])=CC=C3C(=O)C2=C1 NMNSBFYYVHREEE-UHFFFAOYSA-N 0.000 description 1
- ZWAMZDRREBOHIO-UHFFFAOYSA-N 1-ethylpyrene Chemical compound C1=C2C(CC)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 ZWAMZDRREBOHIO-UHFFFAOYSA-N 0.000 description 1
- KCIJNJVCFPSUBQ-UHFFFAOYSA-N 1-pyren-1-ylethanone Chemical compound C1=C2C(C(=O)C)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 KCIJNJVCFPSUBQ-UHFFFAOYSA-N 0.000 description 1
- JOERSAVCLPYNIZ-UHFFFAOYSA-N 2,4,5,7-tetranitrofluoren-9-one Chemical compound O=C1C2=CC([N+]([O-])=O)=CC([N+]([O-])=O)=C2C2=C1C=C([N+](=O)[O-])C=C2[N+]([O-])=O JOERSAVCLPYNIZ-UHFFFAOYSA-N 0.000 description 1
- KLLLJCACIRKBDT-UHFFFAOYSA-N 2-phenyl-1H-indole Chemical compound N1C2=CC=CC=C2C=C1C1=CC=CC=C1 KLLLJCACIRKBDT-UHFFFAOYSA-N 0.000 description 1
- IXAFAYIIDHDJHN-UHFFFAOYSA-N 4-methylpyrene Natural products C1=CC=C2C(C)=CC3=CC=CC4=CC=C1C2=C34 IXAFAYIIDHDJHN-UHFFFAOYSA-N 0.000 description 1
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- XYPMAZCBFKBIFK-UHFFFAOYSA-N 9,10-dinitroanthracene Chemical compound C1=CC=C2C([N+](=O)[O-])=C(C=CC=C3)C3=C([N+]([O-])=O)C2=C1 XYPMAZCBFKBIFK-UHFFFAOYSA-N 0.000 description 1
- PLAZXGNBGZYJSA-UHFFFAOYSA-N 9-ethylcarbazole Chemical compound C1=CC=C2N(CC)C3=CC=CC=C3C2=C1 PLAZXGNBGZYJSA-UHFFFAOYSA-N 0.000 description 1
- VIJYEGDOKCKUOL-UHFFFAOYSA-N 9-phenylcarbazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 VIJYEGDOKCKUOL-UHFFFAOYSA-N 0.000 description 1
- LSZJZNNASZFXKN-UHFFFAOYSA-N 9-propan-2-ylcarbazole Chemical compound C1=CC=C2N(C(C)C)C3=CC=CC=C3C2=C1 LSZJZNNASZFXKN-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 229910001179 chromel Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- QHADMMAFBAZFTE-UHFFFAOYSA-N naphtho[2,1,8-def]quinoline Chemical compound C1=CN=C2C=CC3=CC=CC4=CC=C1C2=C43 QHADMMAFBAZFTE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
Priority Applications (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5185178A JPS54143645A (en) | 1978-04-28 | 1978-04-28 | Image forming member for electrophotography |
| GB7907505A GB2018446B (en) | 1978-03-03 | 1979-03-02 | Image-forming member for electrophotography |
| DE19792908123 DE2908123A1 (de) | 1978-03-03 | 1979-03-02 | Bildaufzeichnungsmaterial fuer elektrophotographie |
| DE2954552A DE2954552C2 (enrdf_load_stackoverflow) | 1978-03-03 | 1979-03-02 | |
| DE2954551A DE2954551C2 (enrdf_load_stackoverflow) | 1978-03-03 | 1979-03-02 | |
| US06/269,846 US4461819A (en) | 1978-03-03 | 1981-06-03 | Image-forming member for electrophotography |
| US06/565,146 US4551405A (en) | 1978-03-03 | 1983-12-23 | Image forming process employing member with a depletion layer |
| US06/565,191 US4557990A (en) | 1978-03-03 | 1983-12-23 | Hydrogenated amorphous silicon photosensitive member for electrophotography |
| US06/763,214 US4613558A (en) | 1978-03-03 | 1985-08-07 | Hydrogenated amorphous silicon photosensitive method for electrophotography |
| US06/872,935 US4670369A (en) | 1978-03-03 | 1986-06-11 | Image-forming member for electrophotography |
| HK426/88A HK42688A (en) | 1978-03-03 | 1988-06-09 | Image-forming member for electrophotography |
| US08/121,252 USRE35198E (en) | 1978-03-03 | 1993-09-15 | Image forming member for electrophotography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5185178A JPS54143645A (en) | 1978-04-28 | 1978-04-28 | Image forming member for electrophotography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54143645A JPS54143645A (en) | 1979-11-09 |
| JPS6161103B2 true JPS6161103B2 (enrdf_load_stackoverflow) | 1986-12-24 |
Family
ID=12898350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5185178A Granted JPS54143645A (en) | 1978-03-03 | 1978-04-28 | Image forming member for electrophotography |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54143645A (enrdf_load_stackoverflow) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55111906A (en) * | 1979-02-22 | 1980-08-29 | Nippon Telegr & Teleph Corp <Ntt> | Optical transmission path |
| JPS5660445A (en) * | 1979-10-23 | 1981-05-25 | Fuji Photo Film Co Ltd | Function separation type electrophotographic receptor |
| JPS56161551A (en) * | 1980-05-16 | 1981-12-11 | Canon Inc | Image forming member for electrophotography |
| US4394426A (en) * | 1980-09-25 | 1983-07-19 | Canon Kabushiki Kaisha | Photoconductive member with α-Si(N) barrier layer |
| GB2088074B (en) * | 1980-09-26 | 1984-12-19 | Copyer Co | Electrophotographic photosensitive member |
| JPS60221766A (ja) * | 1984-04-18 | 1985-11-06 | Stanley Electric Co Ltd | 電子写真用感光体 |
| JPS62288850A (ja) * | 1986-06-09 | 1987-12-15 | Stanley Electric Co Ltd | ｎ−ｉ型キヤリア−発生層を有する電子写真感光体 |
| US4886719A (en) * | 1987-05-07 | 1989-12-12 | Matsushita Electric Industrial Co., Ltd. | Electrophotography photosensitive member and a method for fabricating same |
| DE69221064T2 (de) * | 1991-10-17 | 1997-11-13 | Canon Kk | Elektrophotographisches, lichtempfindliches Element, elektrophotographische Geräteeinheit und Faksimile-Gerät mit demselben |
| DE69400468T2 (de) * | 1993-06-29 | 1997-02-13 | Canon Kk | Bilderzeugungsverfahren |
| JP2617417B2 (ja) * | 1993-10-25 | 1997-06-04 | 株式会社 半導体エネルギー研究所 | 電子写真用感光体 |
| US6180303B1 (en) | 1998-06-12 | 2001-01-30 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member, process cartridge and electrophotographic apparatus, and process for producing the same photosensitive member |
| US6416915B1 (en) | 1998-11-13 | 2002-07-09 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member, process cartridge and electrophotographic apparatus |
| US6372397B1 (en) | 1999-01-06 | 2002-04-16 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member, process cartridge and electrophotographic apparatus |
| JP4546055B2 (ja) | 2002-09-24 | 2010-09-15 | キヤノン株式会社 | クリーニングブラシのブラシ密度と静電像の１画素面積の設定方法 |
| EP2328029B1 (en) | 2003-07-25 | 2012-05-23 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus |
| EP1628172B1 (en) | 2004-05-14 | 2017-09-20 | Canon Kabushiki Kaisha | Image forming method |
| CN101189558B (zh) | 2005-06-02 | 2010-12-08 | 佳能株式会社 | 电子照相感光构件、处理盒和电子照相设备 |
| EP1975727B1 (en) | 2006-01-06 | 2018-08-01 | Canon Kabushiki Kaisha | Developing agent and method for image formation |
| JP5451303B2 (ja) | 2008-10-30 | 2014-03-26 | キヤノン株式会社 | 画像形成装置 |
| JP5854846B2 (ja) | 2012-01-10 | 2016-02-09 | キヤノン株式会社 | 画像形成装置 |
| JP5921222B2 (ja) | 2012-01-31 | 2016-05-24 | キヤノン株式会社 | 画像形成装置 |
-
1978
- 1978-04-28 JP JP5185178A patent/JPS54143645A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54143645A (en) | 1979-11-09 |
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