JPS5660445A - Function separation type electrophotographic receptor - Google Patents

Function separation type electrophotographic receptor

Info

Publication number
JPS5660445A
JPS5660445A JP13675479A JP13675479A JPS5660445A JP S5660445 A JPS5660445 A JP S5660445A JP 13675479 A JP13675479 A JP 13675479A JP 13675479 A JP13675479 A JP 13675479A JP S5660445 A JPS5660445 A JP S5660445A
Authority
JP
Japan
Prior art keywords
type
layer
sih
amorphous silicon
photosensitive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13675479A
Other languages
Japanese (ja)
Inventor
Kazuhiro Kawajiri
Yuzo Mizobuchi
Akio Azuma
Hiroshi Tamura
Takashi Takeda
Masataka Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP13675479A priority Critical patent/JPS5660445A/en
Publication of JPS5660445A publication Critical patent/JPS5660445A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain high sensitivity and superior electrophotographic characteristics, by laminating an organic charge transfer layer having n type or p type conductivity on a photosensitive layer made of H doped amorphous silicon having p-n junction adjacently to the same conductivity type photosensitive layer.
CONSTITUTION: p type amorphous silicon layer a-SiH(p) doped with 10W40atom% H and boron or the like, or n type amorphous silicon layer a-SiH(n) doped with phosphorus or the like is formed on conductive substrate S. Then, an amorphous silicon layer a-SiH(n) or a-SiH(p) of a type different from the above layer is laminated to form a photosensitive layer having p-n junction and thickness ≤3μm. Next, n or p type organic charge transfer layer CT(n) or CT(p) of conductivity type same as that of the p-n junction lyaer is formed. A charge blocking layer (B) made of an insulator, such as SiO2 may be formed on the side of the photosensitive layer not contacting layer CT. The uppermost photosensitive layer is charged negatively or positively in accordance with p type or n type of the charge transfer layer, respectively.
COPYRIGHT: (C)1981,JPO&Japio
JP13675479A 1979-10-23 1979-10-23 Function separation type electrophotographic receptor Pending JPS5660445A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13675479A JPS5660445A (en) 1979-10-23 1979-10-23 Function separation type electrophotographic receptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13675479A JPS5660445A (en) 1979-10-23 1979-10-23 Function separation type electrophotographic receptor

Publications (1)

Publication Number Publication Date
JPS5660445A true JPS5660445A (en) 1981-05-25

Family

ID=15182710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13675479A Pending JPS5660445A (en) 1979-10-23 1979-10-23 Function separation type electrophotographic receptor

Country Status (1)

Country Link
JP (1) JPS5660445A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143645A (en) * 1978-04-28 1979-11-09 Canon Inc Image forming member for electrophotography

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143645A (en) * 1978-04-28 1979-11-09 Canon Inc Image forming member for electrophotography

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