JPS6212504B2 - - Google Patents
Info
- Publication number
- JPS6212504B2 JPS6212504B2 JP124181A JP124181A JPS6212504B2 JP S6212504 B2 JPS6212504 B2 JP S6212504B2 JP 124181 A JP124181 A JP 124181A JP 124181 A JP124181 A JP 124181A JP S6212504 B2 JPS6212504 B2 JP S6212504B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- mask
- photomask
- patterns
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 4
- 239000011800 void material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 19
- 239000004020 conductor Substances 0.000 description 11
- 229910000889 permalloy Inorganic materials 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000011651 chromium Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP124181A JPS57115544A (en) | 1981-01-09 | 1981-01-09 | Photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP124181A JPS57115544A (en) | 1981-01-09 | 1981-01-09 | Photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57115544A JPS57115544A (en) | 1982-07-19 |
| JPS6212504B2 true JPS6212504B2 (enrdf_load_stackoverflow) | 1987-03-19 |
Family
ID=11495955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP124181A Granted JPS57115544A (en) | 1981-01-09 | 1981-01-09 | Photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57115544A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3623637A1 (de) * | 1986-07-12 | 1988-01-21 | Kernforschungsz Karlsruhe | Verfahren zur herstellung von mikrostrukturen unterschiedlicher strukturhoehe mittels roentgentiefenlithographie |
-
1981
- 1981-01-09 JP JP124181A patent/JPS57115544A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57115544A (en) | 1982-07-19 |
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