JPS57115544A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS57115544A JPS57115544A JP124181A JP124181A JPS57115544A JP S57115544 A JPS57115544 A JP S57115544A JP 124181 A JP124181 A JP 124181A JP 124181 A JP124181 A JP 124181A JP S57115544 A JPS57115544 A JP S57115544A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- patterns
- film
- resist
- air gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003271 Ni-Fe Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP124181A JPS57115544A (en) | 1981-01-09 | 1981-01-09 | Photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP124181A JPS57115544A (en) | 1981-01-09 | 1981-01-09 | Photomask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57115544A true JPS57115544A (en) | 1982-07-19 |
JPS6212504B2 JPS6212504B2 (enrdf_load_stackoverflow) | 1987-03-19 |
Family
ID=11495955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP124181A Granted JPS57115544A (en) | 1981-01-09 | 1981-01-09 | Photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57115544A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0253066A3 (de) * | 1986-07-12 | 1989-11-08 | Kernforschungszentrum Karlsruhe Gmbh | Verfahren zur Herstellung von Mikrostrukturen unterschiedlicher Strukturhöhe mittels Röntgentiefenlithographie |
-
1981
- 1981-01-09 JP JP124181A patent/JPS57115544A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0253066A3 (de) * | 1986-07-12 | 1989-11-08 | Kernforschungszentrum Karlsruhe Gmbh | Verfahren zur Herstellung von Mikrostrukturen unterschiedlicher Strukturhöhe mittels Röntgentiefenlithographie |
Also Published As
Publication number | Publication date |
---|---|
JPS6212504B2 (enrdf_load_stackoverflow) | 1987-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57190912A (en) | Production of color filter | |
JPS5630129A (en) | Manufacture of photomask | |
JPS57115544A (en) | Photomask | |
JPS55157737A (en) | Resist pattern forming method for photofabrication | |
JPS6421450A (en) | Production of mask | |
JPS56137633A (en) | Pattern forming | |
JPS5699342A (en) | Manufacture of photomask | |
US5976732A (en) | Photomask for reconfiguring a circuit by exposure at two different wavelengths | |
JPS57138638A (en) | Photoetching mask | |
JPS5685751A (en) | Photomask | |
JPS57112753A (en) | Exposure method | |
JPS58102233A (ja) | フオトマスク | |
JPS5689741A (en) | Dryplate for photomasking | |
ATE53682T1 (de) | Verfahren zur herstellung von grossflaechigen integrierten schaltungen. | |
JPS5616140A (en) | Production of photomask for contraction | |
JPS57212445A (en) | Production of photomask | |
JPS56130750A (en) | Manufacture of mask | |
JPS60231331A (ja) | リフトオフ・パタ−ンの形成方法 | |
JPS5743425A (en) | Forming method for fine pattern | |
JPH01245258A (ja) | フォトマスク | |
JPS56108880A (en) | Selectively etching method for silicon oxide film | |
JPS5799371A (en) | Formation of resin film | |
JPS56158334A (en) | Manufacture of hard mask | |
JPS561534A (en) | Manufacture of photomask | |
JPS57198460A (en) | Formation of mask for matrix waveguide |