JPS6212454B2 - - Google Patents
Info
- Publication number
- JPS6212454B2 JPS6212454B2 JP55102893A JP10289380A JPS6212454B2 JP S6212454 B2 JPS6212454 B2 JP S6212454B2 JP 55102893 A JP55102893 A JP 55102893A JP 10289380 A JP10289380 A JP 10289380A JP S6212454 B2 JPS6212454 B2 JP S6212454B2
- Authority
- JP
- Japan
- Prior art keywords
- pyroelectric
- insulating film
- forming
- wave detection
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 22
- 238000001514 detection method Methods 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 18
- 238000005260 corrosion Methods 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000006096 absorbing agent Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 239000008188 pellet Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 5
- 238000003486 chemical etching Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- MMAADVOQRITKKL-UHFFFAOYSA-N chromium platinum Chemical compound [Cr].[Pt] MMAADVOQRITKKL-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Landscapes
- Radiation Pyrometers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10289380A JPS5728223A (en) | 1980-07-26 | 1980-07-26 | Pyroelectric type radiation wave detector and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10289380A JPS5728223A (en) | 1980-07-26 | 1980-07-26 | Pyroelectric type radiation wave detector and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5728223A JPS5728223A (en) | 1982-02-15 |
| JPS6212454B2 true JPS6212454B2 (fr) | 1987-03-18 |
Family
ID=14339533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10289380A Granted JPS5728223A (en) | 1980-07-26 | 1980-07-26 | Pyroelectric type radiation wave detector and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5728223A (fr) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5913926A (ja) * | 1982-07-15 | 1984-01-24 | Matsushita Electric Ind Co Ltd | 焦電素子 |
| JPS5980923A (ja) * | 1982-10-30 | 1984-05-10 | 株式会社島津製作所 | 焦電素子の製造法 |
| JPS60119426A (ja) * | 1983-12-01 | 1985-06-26 | Murata Mfg Co Ltd | 薄膜型焦電センサアレイ |
| JPS6136967A (ja) * | 1984-07-30 | 1986-02-21 | Matsushita Electric Ind Co Ltd | 赤外線リニアアレイ素子およびその製造方法 |
| JPS61187320A (ja) * | 1985-02-15 | 1986-08-21 | 住友電気工業株式会社 | 強誘電体薄膜センサ− |
| JPH0765936B2 (ja) * | 1986-05-16 | 1995-07-19 | アンリツ株式会社 | 輻射波検出素子とその製法 |
| JPH0194227A (ja) * | 1987-10-05 | 1989-04-12 | Hamamatsu Photonics Kk | 焦電検出装置とその製造方法 |
| JPH0682073B2 (ja) * | 1988-08-30 | 1994-10-19 | 株式会社村田製作所 | 焦電型赤外線センサ |
| EP0630058A3 (fr) * | 1993-05-19 | 1995-03-15 | Siemens Ag | Procédé de fabrication d'un arrangement de pyrodétecteurs par gravure électrochimique d'un substrat de silicium. |
| JP3196823B2 (ja) | 1997-06-11 | 2001-08-06 | 日本電気株式会社 | 半導体装置 |
| JP4269859B2 (ja) | 2003-09-10 | 2009-05-27 | 株式会社島津製作所 | 放射線検出器 |
| KR100666693B1 (ko) * | 2004-11-23 | 2007-01-11 | 삼성전자주식회사 | 모놀리식 듀플렉서 |
| JP5286906B2 (ja) * | 2007-06-08 | 2013-09-11 | 大日本印刷株式会社 | 圧電ミラーデバイスとこれを用いた光学機器および圧電ミラーデバイスの製造方法 |
| WO2009143354A2 (fr) * | 2008-05-23 | 2009-11-26 | Fujifilm Corporation | Utilisation d’un film isolé dans un dispositif mems |
-
1980
- 1980-07-26 JP JP10289380A patent/JPS5728223A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5728223A (en) | 1982-02-15 |
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