JPS5728223A - Pyroelectric type radiation wave detector and manufacture thereof - Google Patents
Pyroelectric type radiation wave detector and manufacture thereofInfo
- Publication number
- JPS5728223A JPS5728223A JP10289380A JP10289380A JPS5728223A JP S5728223 A JPS5728223 A JP S5728223A JP 10289380 A JP10289380 A JP 10289380A JP 10289380 A JP10289380 A JP 10289380A JP S5728223 A JPS5728223 A JP S5728223A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- manufacture
- silicon
- pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000005855 radiation Effects 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000006096 absorbing agent Substances 0.000 abstract 2
- 239000008188 pellet Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910003327 LiNbO3 Inorganic materials 0.000 abstract 1
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Landscapes
- Radiation Pyrometers (AREA)
Abstract
PURPOSE:To facilitate the manufacture of an element with higher sensitivity and durability, by preparing an insulating film and a frame part of a semiconductor crystal thicker than said film, and by forming a lower part electrode, a pyroelectric element, an upper electrode and a thermal absorber. CONSTITUTION:Two faces parallel to a (100) plane of a semiconductor crystal plate 7, for example, silicon crystal plates are polished to obtain mirror surfaces, and insulating films 8, 9 of SiO2 or the like that contact closely with the silicon crystal plate are formed. Further, one part of the film 9 is removed by photoetching a hole 10 having a shape of a square or a rectangle shape is formed, and the surface of the silicon is exposed. Then by sputtering one such as a chrome platinum film, the lower part electrode 11 is formed, and over said electrode, one such as PbTiO3 or LiNbO3 is deposited as a pyroelectric element 12. Further the lower surface electrode 13 is formed from a Cr-Au film, and a thermal absorber 14 is deposited. Next, by etching with an anisotropic chemical etchant, a hole 15 is formed to obtain a pellet. Said pellet is sealed in a package together with resistances and FET's. Hereby, an excellent element can be manufactured easily.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10289380A JPS5728223A (en) | 1980-07-26 | 1980-07-26 | Pyroelectric type radiation wave detector and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10289380A JPS5728223A (en) | 1980-07-26 | 1980-07-26 | Pyroelectric type radiation wave detector and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5728223A true JPS5728223A (en) | 1982-02-15 |
| JPS6212454B2 JPS6212454B2 (en) | 1987-03-18 |
Family
ID=14339533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10289380A Granted JPS5728223A (en) | 1980-07-26 | 1980-07-26 | Pyroelectric type radiation wave detector and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5728223A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5913926A (en) * | 1982-07-15 | 1984-01-24 | Matsushita Electric Ind Co Ltd | Pyroelectric element |
| JPS5980923A (en) * | 1982-10-30 | 1984-05-10 | 株式会社島津製作所 | Pyroelectric element and method of producing same |
| JPS60119426A (en) * | 1983-12-01 | 1985-06-26 | Murata Mfg Co Ltd | Thin film type pyroelectric sensor array |
| JPS6136967A (en) * | 1984-07-30 | 1986-02-21 | Matsushita Electric Ind Co Ltd | Infrared ray linear array element and manufacture thereof |
| JPS61187320A (en) * | 1985-02-15 | 1986-08-21 | 住友電気工業株式会社 | Ferrodielectric thin film sensor |
| JPS62269026A (en) * | 1986-05-16 | 1987-11-21 | Anritsu Corp | Radiant wave detection element and manufacture thereof |
| JPH0194227A (en) * | 1987-10-05 | 1989-04-12 | Hamamatsu Photonics Kk | Pyroelectric detection apparatus and production thereof |
| JPH0262923A (en) * | 1988-08-30 | 1990-03-02 | Murata Mfg Co Ltd | Pyroelectric type infrared ray sensor |
| EP0630058A2 (en) * | 1993-05-19 | 1994-12-21 | Siemens Aktiengesellschaft | Process for forming an arrangement of pyrodetectors by electrochemically etching a silicon substrate |
| US6329696B1 (en) | 1997-06-11 | 2001-12-11 | Nec Corporation | Semiconductor device with electric converter element |
| KR100624026B1 (en) | 2003-09-10 | 2006-09-15 | 가부시키가이샤 시마즈세이사쿠쇼 | Radiation detector |
| US20100095497A1 (en) * | 2004-11-23 | 2010-04-22 | Samsung Electronics Co., Ltd. | Monolithic duplexer |
| US20110115341A1 (en) * | 2008-05-23 | 2011-05-19 | Jeffrey Birkmeyer | Insulated Film Use in a Mems Device |
| US20110179614A1 (en) * | 2007-06-08 | 2011-07-28 | Dai Nippon Printing Co., Ltd. | Piezoelectric mirror device, optical equipment incorporating the same, and piezoelectric mirror device fabrication process |
-
1980
- 1980-07-26 JP JP10289380A patent/JPS5728223A/en active Granted
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5913926A (en) * | 1982-07-15 | 1984-01-24 | Matsushita Electric Ind Co Ltd | Pyroelectric element |
| JPH0129413B2 (en) * | 1982-07-15 | 1989-06-09 | Matsushita Electric Ind Co Ltd | |
| JPS5980923A (en) * | 1982-10-30 | 1984-05-10 | 株式会社島津製作所 | Pyroelectric element and method of producing same |
| JPH049246B2 (en) * | 1982-10-30 | 1992-02-19 | ||
| JPS60119426A (en) * | 1983-12-01 | 1985-06-26 | Murata Mfg Co Ltd | Thin film type pyroelectric sensor array |
| JPS6136967A (en) * | 1984-07-30 | 1986-02-21 | Matsushita Electric Ind Co Ltd | Infrared ray linear array element and manufacture thereof |
| JPS61187320A (en) * | 1985-02-15 | 1986-08-21 | 住友電気工業株式会社 | Ferrodielectric thin film sensor |
| JPS62269026A (en) * | 1986-05-16 | 1987-11-21 | Anritsu Corp | Radiant wave detection element and manufacture thereof |
| JPH0194227A (en) * | 1987-10-05 | 1989-04-12 | Hamamatsu Photonics Kk | Pyroelectric detection apparatus and production thereof |
| JPH0262923A (en) * | 1988-08-30 | 1990-03-02 | Murata Mfg Co Ltd | Pyroelectric type infrared ray sensor |
| EP0630058A2 (en) * | 1993-05-19 | 1994-12-21 | Siemens Aktiengesellschaft | Process for forming an arrangement of pyrodetectors by electrochemically etching a silicon substrate |
| EP0630058A3 (en) * | 1993-05-19 | 1995-03-15 | Siemens Ag | Process for forming an arrangement of pyrodetectors by electrochemically etching a silicon substrate. |
| US6329696B1 (en) | 1997-06-11 | 2001-12-11 | Nec Corporation | Semiconductor device with electric converter element |
| KR100624026B1 (en) | 2003-09-10 | 2006-09-15 | 가부시키가이샤 시마즈세이사쿠쇼 | Radiation detector |
| US20100095497A1 (en) * | 2004-11-23 | 2010-04-22 | Samsung Electronics Co., Ltd. | Monolithic duplexer |
| US8720023B2 (en) * | 2004-11-23 | 2014-05-13 | Samsung Electronics Co., Ltd. | Method of manufacturing a monolithic duplexer |
| US20110179614A1 (en) * | 2007-06-08 | 2011-07-28 | Dai Nippon Printing Co., Ltd. | Piezoelectric mirror device, optical equipment incorporating the same, and piezoelectric mirror device fabrication process |
| US8539655B2 (en) * | 2007-06-08 | 2013-09-24 | Dai Nippon Printing Co., Ltd. | Fabrication process for a piezoelectric mirror device |
| US20110115341A1 (en) * | 2008-05-23 | 2011-05-19 | Jeffrey Birkmeyer | Insulated Film Use in a Mems Device |
| US8857020B2 (en) * | 2008-05-23 | 2014-10-14 | Fujifilm Corporation | Actuators and methods of making the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6212454B2 (en) | 1987-03-18 |
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